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Erschienen in:
01.01.2014
Structural, morphological and optical properties of \(\hbox {In}_{2}\hbox {S}_{3}\) thin films obtained by SILAR method
Erschienen in: Optical and Quantum Electronics | Ausgabe 1/2014
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Abstract
\(\hbox {In}_{2}\hbox {S}_{3}\) thin films have been elaborated onto glass substrate by SILAR method at room temperature using different immersion time in the solution of cation and anion and fixing the rinsing time. The film composition, morphology and structure were investigated using energy dispersive X-ray analysis (EDAX), scanning electron microscopy (SEM) and X-ray diffraction techniques. Optical properties, such transmission and band gap have been also analyzed. The effects of annealing on the morphological structure thin films are also described. The x-rays diffraction spectra indicated that the formed compounds are \(\upbeta \)-\(\hbox {In}_{2}\hbox {S}_{3}\) polycrystalline thin films with \(\hbox {In}_{6}\hbox {S}_{7 }\) as second phase in sample S1 and sample S2 and no another phase in sample 3. SEM revealed homogeneous and relatively uniform films and EDAX shows sample 3 with S/In=1.44. For sample 1 and sample 2, we noted an increase of band gap when rinsing time increases.