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Erschienen in:
2014 | OriginalPaper | Buchkapitel
Studies on Nanostructured V2O5 Deposited by Reactive DC Magnetron Sputtering
verfasst von : P. Deepak Raj, Sudha Gupta, M. Sridharan
Erschienen in: Physics of Semiconductor Devices
Verlag: Springer International Publishing
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Nanostructured V
2
O
5
thin films were deposited on to cleaned Si (100) substrates using reactive DC magnetron sputtering technique at various substrate temperatures (T
s
). The grain sizes of the films were around 140–210 nm. The field emission-scanning electron micrographs showed nanosheet like structure grown perpendicular to substrate. The optical bandgap energy of the films increased with increase in T
s.
The films deposited at 100 °C exhibited a temperature coefficient of resistance (TCR) value of −2.5 %/ °C.