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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 12/2019

08.05.2019

Study of γ-ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C–V and DLTS

verfasst von: Shu-rui Cao, Xiao-yu Ke, Si-ting Ming, Duo-wei Wang, Tong Li, Bing-yan Liu, Yao Ma, Yun Li, Zhi-mei Yang, Min Gong, Ming-min Huang, Jin-shun Bi, Yan-nan Xu, Kai Xi, Gao-bo Xu, Sandip Majumdar

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 12/2019

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Abstract

Gamma-ray radiation effects on the SiO2/HfO2/Al2O3/HfO2/Al2O3 based charge trapping memory have been investigated. Capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS) measurements were applied to study the change in electrical properties from total dose radiation. C–V results showed a negative shift of flat-band voltage while dc memory window degraded after gamma-ray radiation. For DLTS result, two original peaks were found degraded while two new peaks appeared after radiation. Both C–V and DLTS results show that Gamma ray leads to the degradation of trapping effect.
Vorheriger Artikel Enhanced SO2 gas sensing properties of metal organic frameworks-derived titanium dioxide/reduced graphene oxide nanostructure
Nächster Artikel Interface-induced d0 ferromagnetism in undoped ZnO thin films grown on different oriented sapphire substrates

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Metadaten
Titel
Study of γ-ray radiation influence on SiO2/HfO2/Al2O3/HfO2/Al2O3 memory capacitor by C–V and DLTS
verfasst von
Shu-rui Cao
Xiao-yu Ke
Si-ting Ming
Duo-wei Wang
Tong Li
Bing-yan Liu
Yao Ma
Yun Li
Zhi-mei Yang
Min Gong
Ming-min Huang
Jin-shun Bi
Yan-nan Xu
Kai Xi
Gao-bo Xu
Sandip Majumdar
Publikationsdatum
08.05.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 12/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-01450-6

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