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Erschienen in: Journal of Materials Science: Materials in Electronics 21/2019

01.10.2019

Study of structural, optical and dielectric properties of α-MnO2 nanotubes (NTS)

verfasst von: Syed Ibrahim Shah, Zulfiqar, Tahirzeb Khan, Rajwali Khan, Sardar Ali Khan, Shaukat Ali Khattak, Gulzar Khan

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 21/2019

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Abstract

In this work, the synthesis of α-MnO2 nanotubes (NTs) via hydrothermal route is reported. XRD investigation confirms the tetragonal crystalline structure of α-MnO2 NTs, where the calculated grain size is equal to 29.3205 ± 4.3227 nm. The observed morphology of α-MnO2 in SEM and TEM images confirm the formation of nanotubes. EDX data confirms that the sample contains Mn and O only. In FTIR, Mn–O stretching mode at 530 cm−1 is observed. In addition, the O–O stretching mode at 715 cm−1 also confirms the presence of MnO6 units. Raman spectrum provides the fingerprints at 569 cm−1 and 635 cm−1 of α-MnO2 originating due to breathing vibrations of MnO6 units. The calculated band gap is 2.7 eV, which is blue-shifted as compared to the bulk (2.1 eV). The PL results indicate prominent emission peaks in blue region (467 nm) and in green region (566 nm). The dielectric constant and dielectric loss of α-MnO2 NTs are high at low frequencies due to conducting grain volume and resistive grain boundaries, while both are low at higher frequencies due to the lagging of charge carriers behind the field. The conductivity of α-MnO2 NTs increases with increasing applied field frequency due to the hopping process between Mn3+/Mn4+ and liberation of trapped charges. Magnetic properties show ferromagnetic nature of α-MnO2 NTs which is attributed to coupling of Mn4+–O2−–Mn4+. The magnetic properties of α-MnO2 are affected by Mn ion interaction which in turn depends upon valence division of Mn in the Mn2O4 framework.

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Metadaten
Titel
Study of structural, optical and dielectric properties of α-MnO2 nanotubes (NTS)
verfasst von
Syed Ibrahim Shah
Zulfiqar
Tahirzeb Khan
Rajwali Khan
Sardar Ali Khan
Shaukat Ali Khattak
Gulzar Khan
Publikationsdatum
01.10.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 21/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-02277-x

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