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Journal of Materials Science
Erschienen in: Journal of Materials Science 14/2019

25.04.2019 | Electronic materials

Superior-performance TiN films sputtered for capacitor electrodes

verfasst von: Nana Sun, Dayu Zhou, Shuyan Shi, Feng Liu, Wenwen Liu, Qilei Chen, Peng Zhao, Shuaidong Li, Jingjing Wang

Erschienen in: Journal of Materials Science | Ausgabe 14/2019

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Abstract

Titanium nitride (TiN) thin films were deposited on Si (100) substrate by direct current reactive sputtering without and with the application of a substrate bias. The aim of this work was to clarify the effects of substrate bias on film properties systematically. The results showed that the substrate bias process changed the film growth regime, and therefore, the stoichiometry, crystalline orientation and morphology were completely different from those of the films prepared without a substrate bias. Importantly, the application of substrate bias contributed a reduction in the resistivity from 100 to 31 μΩ cm, an increase in density by 12% and a decrease in RMS roughness to less than 1 nm. In addition, a significant reduction in leakage current density was observed for capacitors using TiN top electrode deposited with substrate bias.
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Metadaten
Titel
Superior-performance TiN films sputtered for capacitor electrodes
verfasst von
Nana Sun
Dayu Zhou
Shuyan Shi
Feng Liu
Wenwen Liu
Qilei Chen
Peng Zhao
Shuaidong Li
Jingjing Wang
Publikationsdatum
25.04.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 14/2019
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-019-03652-z

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