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2011 | OriginalPaper | Buchkapitel

6. Surface and Interface Characterization

verfasst von : Martin Seah, Dr., Leonardo De Chiffre

Erschienen in: Springer Handbook of Metrology and Testing

Verlag: Springer Berlin Heidelberg

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Abstract

While the bulk material properties treated in Part C of this handbook are obviously important, the surface characteristics of materials are also of great significance. They are responsible for the appearances of materials and surface phenomena, and they have a crucial influence on the interactions of materials with gases or fluids (in corrosion, for example; Chap. 12), contacting solids (as in friction and wear; Chap. 13) or biospecies (Chap. 14), and materials–environment interactions (Chap. 15). Surface and interface characterization have been important topics for very many years. Indeed, it was known in antiquity that impurities could be detrimental to the quality of metals, and that keying and contamination were important to adhesion in architecture and also in the fine arts. In contemporary technologies, surface modification or functional coatings are frequently used to tailor the processing of advanced materials. Some components, such as quantum-well devices and x-ray mirrors, are composed of multilayers with individual layer thicknesses in the low nanometer range. Quality assurance of industrial processes, as well as the development of advanced surface-modified or coated components, requires chemical information on material surfaces and (buried) interfaces with high sensitivity and high lateral and depth resolution. In this chapter we present the methods applicable to the chemical and physical characterization of surfaces and interfaces.
This chapter covers the three main techniques of surface chemical analysis: Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), and secondary ion mass spectrometry (SIMS), which are all still rapidly developing in terms of instrumentation, standards, and applications. AES is excellent for elemental analysis at spatial resolutions down to 10 nm, and XPS can define chemical states down to 10 μm. Both analyze the outermost atom layers and, with sputter depth profiling, layers up to 1 μm thick.
Dynamic SIMS incorporates depth profiling and can detect atomic compositions significantly below 1 ppm. Static SIMS retains this high sensitivity for the surface atomic or molecular layer but provides chemistry-related details not available with AES or XPS. New reference data, measurement standards, and documentary standards from ISO will continue to be developed for surface chemical analysis over the coming years.
The chapter also discusses surface physical analysis (topography characterization), which encompasses measurement, visualization, and quantification. This is critical to both component form and surface finish at macro-, micro-, and nanoscales. The principal methods of surface topography measurement are stylus profilometry, optical scanning techniques, and scanning probe microscopy (SPM). These methods, based on acquiring topography data from point-by-point scans, give quantitative information on surface height with respect to position. The integral methods, which are based on a different approach, produce parameters that represent some average property of the surface under examination. Measurement methods, as well as their application and limitations, are briefly reviewed, including standardization and traceability issues.

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6.54.
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6.55.
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6.56.
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6.57.
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6.58.
Zurück zum Zitat M.P. Seah: Effective dead time in pulse counting systems, Surf. Interface Anal. 23, 729 (1995)CrossRef M.P. Seah: Effective dead time in pulse counting systems, Surf. Interface Anal. 23, 729 (1995)CrossRef
6.59.
Zurück zum Zitat M.P. Seah, I.S. Gilmore, S.J. Spencer: Signal linearity in XPS counting systems, J. Electron Spectrosc. 104, 73 (1999)CrossRef M.P. Seah, I.S. Gilmore, S.J. Spencer: Signal linearity in XPS counting systems, J. Electron Spectrosc. 104, 73 (1999)CrossRef
6.60.
Zurück zum Zitat M.P. Seah, I.S. Gilmore, S.J. Spencer: Method for determining the signal linearity in single and multidetector counting systems in XPS, Appl. Surf. Sci. 144/145, 132 (1999)CrossRef M.P. Seah, I.S. Gilmore, S.J. Spencer: Method for determining the signal linearity in single and multidetector counting systems in XPS, Appl. Surf. Sci. 144/145, 132 (1999)CrossRef
6.61.
Zurück zum Zitat M.P. Seah, G.C. Smith: AES – Accurate intensity calibration of spectrometers – Results of a BCR interlaboratory comparison cosponsored by the VAMAS SCA TWP, Surf. Interface Anal. 17, 855 (1991)CrossRef M.P. Seah, G.C. Smith: AES – Accurate intensity calibration of spectrometers – Results of a BCR interlaboratory comparison cosponsored by the VAMAS SCA TWP, Surf. Interface Anal. 17, 855 (1991)CrossRef
6.62.
Zurück zum Zitat M.P. Seah: A system for the intensity calibration of electron spectrometers, J. Electron Spectrosc. 71, 191 (1995)CrossRef M.P. Seah: A system for the intensity calibration of electron spectrometers, J. Electron Spectrosc. 71, 191 (1995)CrossRef
6.63.
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Zurück zum Zitat M.P. Seah: Intercomparison of silicon dioxide thickness measurements made by multiple techniques – The route to accuracy, J. Vac. Sci. Technol. A 22, 1564 (2004)CrossRef M.P. Seah: Intercomparison of silicon dioxide thickness measurements made by multiple techniques – The route to accuracy, J. Vac. Sci. Technol. A 22, 1564 (2004)CrossRef
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Zurück zum Zitat M.P. Seah, S.J. Spencer: Ultra-thin SiO2 on Si, II: Issues in quantification of the oxide thickness, Surf. Interface Anal. 33, 640 (2002)CrossRef M.P. Seah, S.J. Spencer: Ultra-thin SiO2 on Si, II: Issues in quantification of the oxide thickness, Surf. Interface Anal. 33, 640 (2002)CrossRef
6.133.
Zurück zum Zitat M.P. Seah, S.J. Spencer: Ultra-thin SiO2 on Si, IV: Thickness linearity and intensity measurement in XPS, Surf. Interface Anal. 35, 515 (2003)CrossRef M.P. Seah, S.J. Spencer: Ultra-thin SiO2 on Si, IV: Thickness linearity and intensity measurement in XPS, Surf. Interface Anal. 35, 515 (2003)CrossRef
6.134.
Zurück zum Zitat M.P. Seah, S.J. Spencer: Ultrathin SiO2 on Si, VII: Angular accuracy in XPS and an accurate attenuation length, Surf. Interface Anal. 37, 731 (2005)CrossRef M.P. Seah, S.J. Spencer: Ultrathin SiO2 on Si, VII: Angular accuracy in XPS and an accurate attenuation length, Surf. Interface Anal. 37, 731 (2005)CrossRef
6.135.
Zurück zum Zitat M.P. Seah, S.J. Spencer: Attenuation lengths in organic materials, Surf. Interface Anal. 43, 744 (2011)CrossRef M.P. Seah, S.J. Spencer: Attenuation lengths in organic materials, Surf. Interface Anal. 43, 744 (2011)CrossRef
6.136.
Zurück zum Zitat N. Sanada, Y. Yamamoto, R. Oiwa, Y. Ohashi: Extremely low sputtering degradation of polytetrafluoroethylene by C60 ion beam applied in XPS analysis, Surf. Interface Anal. 36, 280 (2004)CrossRef N. Sanada, Y. Yamamoto, R. Oiwa, Y. Ohashi: Extremely low sputtering degradation of polytetrafluoroethylene by C60 ion beam applied in XPS analysis, Surf. Interface Anal. 36, 280 (2004)CrossRef
6.137.
Zurück zum Zitat T. Miyayama, N. Sanada, M. Suzuki, J.S. Hammond, S.-Q.D. Si, A. Takahara: X-ray photoelectron spectroscopy study of polyimide thin films with Ar cluster ion depth profiling, J. Vac. Sci. Technol. A 28, L1 (2010)CrossRef T. Miyayama, N. Sanada, M. Suzuki, J.S. Hammond, S.-Q.D. Si, A. Takahara: X-ray photoelectron spectroscopy study of polyimide thin films with Ar cluster ion depth profiling, J. Vac. Sci. Technol. A 28, L1 (2010)CrossRef
6.138.
Zurück zum Zitat A.G. Shard, F.M. Green, P.J. Brewer, M.P. Seah, I.S. Gilmore: Quantitative molecular depth profiling of organic delta-layers by C60 ion sputtering and SIMS, J. Phys. Chem. B 112, 2596 (2008)CrossRef A.G. Shard, F.M. Green, P.J. Brewer, M.P. Seah, I.S. Gilmore: Quantitative molecular depth profiling of organic delta-layers by C60 ion sputtering and SIMS, J. Phys. Chem. B 112, 2596 (2008)CrossRef
6.139.
Zurück zum Zitat K. Wittmaack: Physical and chemical parameters determining ion yields in SIMS analyses: A closer look at the oxygen-induced yield enhancement effect, Proc. 11st Int. Conf. Second. Ion Mass Spectrom., SIMS XI, ed. by G. Gillen, R. Lareau, J. Bennett, F. Stevie (Wiley, Chichester 1998) p. 11 K. Wittmaack: Physical and chemical parameters determining ion yields in SIMS analyses: A closer look at the oxygen-induced yield enhancement effect, Proc. 11st Int. Conf. Second. Ion Mass Spectrom., SIMS XI, ed. by G. Gillen, R. Lareau, J. Bennett, F. Stevie (Wiley, Chichester 1998) p. 11
6.140.
Zurück zum Zitat C.J. Hitzman, G. Mount: Enhanced depth profiling of ultra-shallow implants using improved low energy ion guns on a quadrupole SIMS instrument, Proc. 11st Int. Conf. Second. Ion Mass Spectrom., SIMS XI, ed. by G. Gillen, R. Lareau, J. Bennett, F. Stevie (Wiley, Chichester 1998) p. 273 C.J. Hitzman, G. Mount: Enhanced depth profiling of ultra-shallow implants using improved low energy ion guns on a quadrupole SIMS instrument, Proc. 11st Int. Conf. Second. Ion Mass Spectrom., SIMS XI, ed. by G. Gillen, R. Lareau, J. Bennett, F. Stevie (Wiley, Chichester 1998) p. 273
6.141.
Zurück zum Zitat I.S. Gilmore: Private communication (2004) I.S. Gilmore: Private communication (2004)
6.142.
Zurück zum Zitat M.G. Dowsett, G. Rowland, P.N. Allen, R.D. Barlow: An analytic form for the SIMS response function measured from ultra-thin impurity layers, Surf. Interface Anal. 21, 310 (1994)CrossRef M.G. Dowsett, G. Rowland, P.N. Allen, R.D. Barlow: An analytic form for the SIMS response function measured from ultra-thin impurity layers, Surf. Interface Anal. 21, 310 (1994)CrossRef
6.143.
Zurück zum Zitat D.W. Moon, J.Y. Won, K.J. Kim, H.J. Kang, M. Petravic: GaAs delta-doped layers in Si for evaluation of SIMS depth resolution, Surf. Interface Anal. 29, 362 (2000)CrossRef D.W. Moon, J.Y. Won, K.J. Kim, H.J. Kang, M. Petravic: GaAs delta-doped layers in Si for evaluation of SIMS depth resolution, Surf. Interface Anal. 29, 362 (2000)CrossRef
6.144.
Zurück zum Zitat M.G. Dowsett: Depth profiling using ultra-low-energy secondary ion mass spectrometry, Appl. Surf. Sci. 203/204, 5 (2003)CrossRef M.G. Dowsett: Depth profiling using ultra-low-energy secondary ion mass spectrometry, Appl. Surf. Sci. 203/204, 5 (2003)CrossRef
6.145.
Zurück zum Zitat K. Wittmaack: The ``Normal Componentʼʼ of the primary ion energy: An inadequate parameter for assessing the depth resolution in SIMS, Proc. 11st Int. Conf. Second. Ion Mass Spectrom., SIMS XII, ed. by A. Benninghoven, P. Bertrand, H.-N. Migeon, H.W. Werner (Wiley, Chichester 2000) p. 569 K. Wittmaack: The ``Normal Componentʼʼ of the primary ion energy: An inadequate parameter for assessing the depth resolution in SIMS, Proc. 11st Int. Conf. Second. Ion Mass Spectrom., SIMS XII, ed. by A. Benninghoven, P. Bertrand, H.-N. Migeon, H.W. Werner (Wiley, Chichester 2000) p. 569
6.146.
Zurück zum Zitat J. Bellingham, M.G. Dowsett, E. Collart, D. Kirkwood: Quantitative analysis of the top 5 nm of boron ultra-shallow implants, Appl. Surf. Sci. 203/204, 851 (2003)CrossRef J. Bellingham, M.G. Dowsett, E. Collart, D. Kirkwood: Quantitative analysis of the top 5 nm of boron ultra-shallow implants, Appl. Surf. Sci. 203/204, 851 (2003)CrossRef
6.147.
Zurück zum Zitat K. Iltgen, A. Benninghoven, E. Niehius: TOF-SIMS depth profiling with optimized depth resolution, Proc. 11st Int. Conf. Second. Ion Mass Spectrom., SIMS XI, ed. by G. Gillen, R. Lareau, J. Bennett, F. Stevie (Wiley, Chichester 1988) p. 367 K. Iltgen, A. Benninghoven, E. Niehius: TOF-SIMS depth profiling with optimized depth resolution, Proc. 11st Int. Conf. Second. Ion Mass Spectrom., SIMS XI, ed. by G. Gillen, R. Lareau, J. Bennett, F. Stevie (Wiley, Chichester 1988) p. 367
6.148.
Zurück zum Zitat C. Hongo, M. Tomita, M. Takenaka, M. Suzuki, A. Murakoshi: Depth profiling for ultrashallow implants using backside secondary ion mass spectrometry, J. Vac. Sci. Technol. B 21, 1422 (2003)CrossRef C. Hongo, M. Tomita, M. Takenaka, M. Suzuki, A. Murakoshi: Depth profiling for ultrashallow implants using backside secondary ion mass spectrometry, J. Vac. Sci. Technol. B 21, 1422 (2003)CrossRef
6.149.
Zurück zum Zitat J. Sameshima, R. Maeda, K. Yamada, A. Karen, S. Yamada: Depth profiles of boron and nitrogen in SiON films by backside SIMS, Appl. Surf. Sci. 231/232, 614 (2004)CrossRef J. Sameshima, R. Maeda, K. Yamada, A. Karen, S. Yamada: Depth profiles of boron and nitrogen in SiON films by backside SIMS, Appl. Surf. Sci. 231/232, 614 (2004)CrossRef
6.150.
Zurück zum Zitat F. Laugier, J.M. Hartmann, H. Moriceau, P. Holliger, R. Truche, J.C. Dupuy: Backside and frontside depth profiling of B delta doping, at low energy, using new and previous magnetic SIMS instruments, Appl. Surf. Sci. 231/232, 668 (2004)CrossRef F. Laugier, J.M. Hartmann, H. Moriceau, P. Holliger, R. Truche, J.C. Dupuy: Backside and frontside depth profiling of B delta doping, at low energy, using new and previous magnetic SIMS instruments, Appl. Surf. Sci. 231/232, 668 (2004)CrossRef
6.151.
Zurück zum Zitat D.W. Moon, H.J. Lee: The dose dependence of Si sputtering with low energy ions in shallow depth profiling, Appl. Surf. Sci. 203/204, 27 (2003)CrossRef D.W. Moon, H.J. Lee: The dose dependence of Si sputtering with low energy ions in shallow depth profiling, Appl. Surf. Sci. 203/204, 27 (2003)CrossRef
6.152.
Zurück zum Zitat K. Wittmaack: Influence of the depth calibration procedure on the apparent shift of impurity depth profiles measured under conditions of long-term changes in erosion rate, J. Vac. Sci. Technol. B 18, 1 (2001)CrossRef K. Wittmaack: Influence of the depth calibration procedure on the apparent shift of impurity depth profiles measured under conditions of long-term changes in erosion rate, J. Vac. Sci. Technol. B 18, 1 (2001)CrossRef
6.153.
Zurück zum Zitat Y. Homma, H. Takenaka, F. Toujou, A. Takano, S. Hayashi, R. Shimizu: Evaluation of the sputter rate variation in SIMS ultra-shallow depth profiling using multiple short-period delta-layers, Surf. Interface Anal. 35, 544 (2003)CrossRef Y. Homma, H. Takenaka, F. Toujou, A. Takano, S. Hayashi, R. Shimizu: Evaluation of the sputter rate variation in SIMS ultra-shallow depth profiling using multiple short-period delta-layers, Surf. Interface Anal. 35, 544 (2003)CrossRef
6.154.
Zurück zum Zitat F. Toujou, S. Yoshikawa, Y. Homma, A. Takano, H. Takenaka, M. Tomita, Z. Li, T. Hasgawa, K. Sasakawa, M. Schuhmacher, A. Merkulov, H.K. Kim, D.W. Moon, T. Hong, J.-Y. Won: Evaluation of BN-delta-doped multilayer reference materials for shallow depth profiling in SIMS: Round robin test, Appl. Surf. Sci. 231/232, 649 (2004)CrossRef F. Toujou, S. Yoshikawa, Y. Homma, A. Takano, H. Takenaka, M. Tomita, Z. Li, T. Hasgawa, K. Sasakawa, M. Schuhmacher, A. Merkulov, H.K. Kim, D.W. Moon, T. Hong, J.-Y. Won: Evaluation of BN-delta-doped multilayer reference materials for shallow depth profiling in SIMS: Round robin test, Appl. Surf. Sci. 231/232, 649 (2004)CrossRef
6.155.
Zurück zum Zitat F.A. Stevie, P.M. Kahora, D.S. Simons, P. Chi: Secondary ion yield changes in Si and GaAs due to topography changes during O2+ or Cs+ ion bombardment, J. Vac. Sci. Technol. A 6, 76 (1988)CrossRef F.A. Stevie, P.M. Kahora, D.S. Simons, P. Chi: Secondary ion yield changes in Si and GaAs due to topography changes during O2+ or Cs+ ion bombardment, J. Vac. Sci. Technol. A 6, 76 (1988)CrossRef
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Zurück zum Zitat Y. Homma, A. Takano, Y. Higashi: Oxygen-ion-induced ripple formation on silicon: Evidence for phase separation and tentative model, Appl. Surf. Sci. 203/204, 35 (2003)CrossRef Y. Homma, A. Takano, Y. Higashi: Oxygen-ion-induced ripple formation on silicon: Evidence for phase separation and tentative model, Appl. Surf. Sci. 203/204, 35 (2003)CrossRef
6.157.
Zurück zum Zitat K. Wittmaack: Artifacts in low-energy depth profiling using oxygen primary ion beams: Dependence on impact angle and oxygen flooding conditions, J. Vac. Sci. Technol. B 16, 2776 (1998)CrossRef K. Wittmaack: Artifacts in low-energy depth profiling using oxygen primary ion beams: Dependence on impact angle and oxygen flooding conditions, J. Vac. Sci. Technol. B 16, 2776 (1998)CrossRef
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Zurück zum Zitat Z.X. Jiang, P.F.K. Alkemade: Erosion rate change and surface roughening in Si during oblique O2+ bombardment with oxygen flooding, Proc. 11st Int. Conf. Second. Ion Mass Spectrom., SIMS XI, ed. by G. Gillen, R. Lareau, J. Bennett, F. Stevie (Wiley, Chichester 1998) p. 431 Z.X. Jiang, P.F.K. Alkemade: Erosion rate change and surface roughening in Si during oblique O2+ bombardment with oxygen flooding, Proc. 11st Int. Conf. Second. Ion Mass Spectrom., SIMS XI, ed. by G. Gillen, R. Lareau, J. Bennett, F. Stevie (Wiley, Chichester 1998) p. 431
6.159.
Zurück zum Zitat K. Kataoka, K. Yamazaki, M. Shigeno, Y. Tada, K. Wittmaack: Surface roughening of silicon under ultra-low-energy cesium bombardment, Appl. Surf. Sci. 203/204, 43 (2003)CrossRef K. Kataoka, K. Yamazaki, M. Shigeno, Y. Tada, K. Wittmaack: Surface roughening of silicon under ultra-low-energy cesium bombardment, Appl. Surf. Sci. 203/204, 43 (2003)CrossRef
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Zurück zum Zitat K. Wittmaack: Concentration-depth calibration and bombardment-induced impurity relocation in SIMS depth profiling of shallow through-oxide implantation distributions: A procedure for eliminating the matrix effect, Surf. Interface Anal. 26, 290 (1998)CrossRef K. Wittmaack: Concentration-depth calibration and bombardment-induced impurity relocation in SIMS depth profiling of shallow through-oxide implantation distributions: A procedure for eliminating the matrix effect, Surf. Interface Anal. 26, 290 (1998)CrossRef
6.161.
Zurück zum Zitat M.G. Dowsett, J.H. Kelly, G. Rowlands, T.J. Ormsby, B. Guzman, P. Augustus, R. Beanland: On determining accurate positions, separations, and internal profiles for delta layers, Appl. Surf. Sci. 203/204, 273 (2003)CrossRef M.G. Dowsett, J.H. Kelly, G. Rowlands, T.J. Ormsby, B. Guzman, P. Augustus, R. Beanland: On determining accurate positions, separations, and internal profiles for delta layers, Appl. Surf. Sci. 203/204, 273 (2003)CrossRef
6.162.
Zurück zum Zitat J.B. Clegg, A.E. Morgan, H.A.M. De Grefte, F. Simondet, A. Huebar, G. Blackmore, M.G. Dowsett, D.E. Sykes, C.W. Magee, V.R. Deline: A comparative study of SIMS depth profiling of boron in silicon, Surf. Interface Anal. 6, 162 (1984)CrossRef J.B. Clegg, A.E. Morgan, H.A.M. De Grefte, F. Simondet, A. Huebar, G. Blackmore, M.G. Dowsett, D.E. Sykes, C.W. Magee, V.R. Deline: A comparative study of SIMS depth profiling of boron in silicon, Surf. Interface Anal. 6, 162 (1984)CrossRef
6.163.
Zurück zum Zitat J.B. Clegg, I.G. Gale, G. Blackmore, M.G. Dowsett, D.S. McPhail, G.D.T. Spiller, D.E. Sykes: A SIMS calibration exercise using multi-element (Cr, Fe and Zn) implanted GaAs, Surf. Interface Anal. 10, 338 (1987)CrossRef J.B. Clegg, I.G. Gale, G. Blackmore, M.G. Dowsett, D.S. McPhail, G.D.T. Spiller, D.E. Sykes: A SIMS calibration exercise using multi-element (Cr, Fe and Zn) implanted GaAs, Surf. Interface Anal. 10, 338 (1987)CrossRef
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Zurück zum Zitat K. Miethe, E.H. Cirlin: An international round robin exercise on SIMS depth profiling of silicon delta-doped layers in GaAs, Proc. 9th Int. Conf. Second. Ion Mass Spectrom., SIMS IX, ed. by A. Benninghoven, Y. Nihei, R. Shimizu, H.W. Werner (Wiley, Chichester 1994) p. 699 K. Miethe, E.H. Cirlin: An international round robin exercise on SIMS depth profiling of silicon delta-doped layers in GaAs, Proc. 9th Int. Conf. Second. Ion Mass Spectrom., SIMS IX, ed. by A. Benninghoven, Y. Nihei, R. Shimizu, H.W. Werner (Wiley, Chichester 1994) p. 699
6.165.
Zurück zum Zitat Y. Okamoto, Y. Homma, S. Hayashi, F. Toujou, N. Isomura, A. Mikami, I. Nomachi, S. Seo, M. Tomita, A. Tamamoto, S. Ichikawa, Y. Kawashima, R. Mimori, Y. Mitsuoka, I. Tachikawa, T. Toyoda, Y. Ueki: SIMS round-robin study of depth profiling of boron implants in silicon, Proc. 11st Int. Conf. Second. Ion Mass Spectrom., SIMS XI, ed. by G. Gillen, R. Lareau, J. Bennett, F. Stevie (Wiley, Chichester 1998) p. 1047 Y. Okamoto, Y. Homma, S. Hayashi, F. Toujou, N. Isomura, A. Mikami, I. Nomachi, S. Seo, M. Tomita, A. Tamamoto, S. Ichikawa, Y. Kawashima, R. Mimori, Y. Mitsuoka, I. Tachikawa, T. Toyoda, Y. Ueki: SIMS round-robin study of depth profiling of boron implants in silicon, Proc. 11st Int. Conf. Second. Ion Mass Spectrom., SIMS XI, ed. by G. Gillen, R. Lareau, J. Bennett, F. Stevie (Wiley, Chichester 1998) p. 1047
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Zurück zum Zitat F. Toujou, M. Tomita, A. Takano, Y. Okamoto, S. Hayashi, A. Yamamoto, Y. Homma: SIMS round-robin study of depth profiling of boron implants in silicon, II Problems of quantification in high concentration B profiles, Proc. 12nd Int. Conf. Second. Ion Mass Spectrom., SIMS XII, ed. by A. Benninghoven, P. Bertrand, H.-N. Migeon, H.W. Werner (Wiley, Chichester 2000) p. 101 F. Toujou, M. Tomita, A. Takano, Y. Okamoto, S. Hayashi, A. Yamamoto, Y. Homma: SIMS round-robin study of depth profiling of boron implants in silicon, II Problems of quantification in high concentration B profiles, Proc. 12nd Int. Conf. Second. Ion Mass Spectrom., SIMS XII, ed. by A. Benninghoven, P. Bertrand, H.-N. Migeon, H.W. Werner (Wiley, Chichester 2000) p. 101
6.167.
Zurück zum Zitat M. Tomita, T. Hasegawa, S. Hashimoto, S. Hayashi, Y. Homma, S. Kakehashi, Y. Kazama, K. Koezuka, H. Kuroki, K. Kusama, Z. Li, S. Miwa, S. Miyaki, Y. Okamoto, K. Okuno, S. Saito, S. Sasaki, H. Shichi, H. Shinohara, F. Toujou, Y. Ueki, Y. Yamamoto: SIMS round-robin study of depth profiling of arsenic implants in silicon, Appl. Surf. Sci. 203/204, 465 (2003)CrossRef M. Tomita, T. Hasegawa, S. Hashimoto, S. Hayashi, Y. Homma, S. Kakehashi, Y. Kazama, K. Koezuka, H. Kuroki, K. Kusama, Z. Li, S. Miwa, S. Miyaki, Y. Okamoto, K. Okuno, S. Saito, S. Sasaki, H. Shichi, H. Shinohara, F. Toujou, Y. Ueki, Y. Yamamoto: SIMS round-robin study of depth profiling of arsenic implants in silicon, Appl. Surf. Sci. 203/204, 465 (2003)CrossRef
6.168.
Zurück zum Zitat I.S. Gilmore, M.P. Seah: Static SIMS: A study of damage using polymers, Surf. Interface Anal. 24, 746 (1996)CrossRef I.S. Gilmore, M.P. Seah: Static SIMS: A study of damage using polymers, Surf. Interface Anal. 24, 746 (1996)CrossRef
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Zurück zum Zitat I.S. Gilmore, M.P. Seah: Electron flood gun damage in the analysis of polymers and organics in time of flight SIMS, Appl. Surf. Sci. 187, 89 (2002)CrossRef I.S. Gilmore, M.P. Seah: Electron flood gun damage in the analysis of polymers and organics in time of flight SIMS, Appl. Surf. Sci. 187, 89 (2002)CrossRef
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Zurück zum Zitat D. Briggs, A. Brown, J.C. Vickerman: Handbook of Static Secondary Ion Mass Spectrometry (SIMS) (Wiley, Chichester 1989) D. Briggs, A. Brown, J.C. Vickerman: Handbook of Static Secondary Ion Mass Spectrometry (SIMS) (Wiley, Chichester 1989)
6.171.
Zurück zum Zitat J.G. Newman, B.A. Carlson, R.S. Michael, J.F. Moulder, T.A. Honit: Static SIMS Handbook of Polymer Analysis (Perkin Elmer, Eden Prairie 1991) J.G. Newman, B.A. Carlson, R.S. Michael, J.F. Moulder, T.A. Honit: Static SIMS Handbook of Polymer Analysis (Perkin Elmer, Eden Prairie 1991)
6.172.
Zurück zum Zitat J.C. Vickerman, D. Briggs, A. Henderson: The Static SIMS Library (Surface Spectra, Manchester 2003), version 2 J.C. Vickerman, D. Briggs, A. Henderson: The Static SIMS Library (Surface Spectra, Manchester 2003), version 2
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Zurück zum Zitat B.C. Schwede, T. Heller, D. Rading, E. Niehius, L. Wiedmann, A. Benninghoven: The Münster High Mass Resolution Static SIMS Library (ION-TOF, Münster 2003) B.C. Schwede, T. Heller, D. Rading, E. Niehius, L. Wiedmann, A. Benninghoven: The Münster High Mass Resolution Static SIMS Library (ION-TOF, Münster 2003)
6.174.
Zurück zum Zitat I.S. Gilmore, M.P. Seah: Static TOF-SIMS – A VAMAS interlaboratory study, Part I: Repeatability and reproducibility of spectra, Surf. Interface Anal. 37, 651 (2005)CrossRef I.S. Gilmore, M.P. Seah: Static TOF-SIMS – A VAMAS interlaboratory study, Part I: Repeatability and reproducibility of spectra, Surf. Interface Anal. 37, 651 (2005)CrossRef
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Zurück zum Zitat F.M. Green, I.S. Gilmore, M.P. Seah: TOF-SIMS: Accurate mass scale calibration, J. Am. Mass Spectrom. Soc. 17, 514 (2007)CrossRef F.M. Green, I.S. Gilmore, M.P. Seah: TOF-SIMS: Accurate mass scale calibration, J. Am. Mass Spectrom. Soc. 17, 514 (2007)CrossRef
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Zurück zum Zitat I.S. Gilmore, M.P. Seah: A static SIMS interlaboratory study, Surf. Interface Anal. 29, 624 (2000)CrossRef I.S. Gilmore, M.P. Seah: A static SIMS interlaboratory study, Surf. Interface Anal. 29, 624 (2000)CrossRef
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Zurück zum Zitat A. Benninghoven, D. Stapel, O. Brox, B. Binkhardt, C. Crone, M. Thiemann, H.F. Arlinghaus: Static SIMS with molecular primary ions, Proc. 12nd Int. Conf. Second. Ion Mass Spectrom., SIMS XII, ed. by A. Benninghoven, P. Bertrand, H.-N. Migeon, H.W. Werner (Wiley, Chichester 2000) p. 259 A. Benninghoven, D. Stapel, O. Brox, B. Binkhardt, C. Crone, M. Thiemann, H.F. Arlinghaus: Static SIMS with molecular primary ions, Proc. 12nd Int. Conf. Second. Ion Mass Spectrom., SIMS XII, ed. by A. Benninghoven, P. Bertrand, H.-N. Migeon, H.W. Werner (Wiley, Chichester 2000) p. 259
6.178.
Zurück zum Zitat A. Schneiders, M. Schröder, D. Stapel, H.F. Arlinghaus, A. Benninghoven: Molecular secondary particle emission from molecular overlayers under SF5+ bombardment, Proc. 12nd Int. Conf. Second. Ion Mass Spectrom., SIMS XII, ed. by A. Benninghoven, P. Bertrand, H.-N. Migeon, H.W. Werner (Wiley, Chichester 2000) p. 263 A. Schneiders, M. Schröder, D. Stapel, H.F. Arlinghaus, A. Benninghoven: Molecular secondary particle emission from molecular overlayers under SF5+ bombardment, Proc. 12nd Int. Conf. Second. Ion Mass Spectrom., SIMS XII, ed. by A. Benninghoven, P. Bertrand, H.-N. Migeon, H.W. Werner (Wiley, Chichester 2000) p. 263
6.179.
Zurück zum Zitat R. Kersting, B. Hagenhoff, P. Pijpers, R. Verlack: The influence of primary ion bombardment conditions on the secondary ion emission behaviour of polymer additives, Appl. Surf. Sci. 203/204, 561 (2003)CrossRef R. Kersting, B. Hagenhoff, P. Pijpers, R. Verlack: The influence of primary ion bombardment conditions on the secondary ion emission behaviour of polymer additives, Appl. Surf. Sci. 203/204, 561 (2003)CrossRef
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Zurück zum Zitat R. Kersting, B. Hagenhoff, F. Kollmer, R. Möllers, E. Niehuis: Influence of primary ion bombardment conditions on the emission of molecular secondary ions, Appl. Surf. Sci. 231/232, 261 (2004)CrossRef R. Kersting, B. Hagenhoff, F. Kollmer, R. Möllers, E. Niehuis: Influence of primary ion bombardment conditions on the emission of molecular secondary ions, Appl. Surf. Sci. 231/232, 261 (2004)CrossRef
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Zurück zum Zitat S.C.C. Wong, R. Hill, P. Blenkinsopp, N.P. Lockyer, D.E. Weibel, J.C. Vickerman: Development of a C60+ ion gun for static SIMS and chemical imaging, Appl. Surf. Sci. 203/204, 219 (2003)CrossRef S.C.C. Wong, R. Hill, P. Blenkinsopp, N.P. Lockyer, D.E. Weibel, J.C. Vickerman: Development of a C60+ ion gun for static SIMS and chemical imaging, Appl. Surf. Sci. 203/204, 219 (2003)CrossRef
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Zurück zum Zitat D.E. Weibel, N. Lockyer, J.C. Vickerman: C60 cluster ion bombardment of organic surfaces, Appl. Surf. Sci. 231/232, 146 (2003)CrossRef D.E. Weibel, N. Lockyer, J.C. Vickerman: C60 cluster ion bombardment of organic surfaces, Appl. Surf. Sci. 231/232, 146 (2003)CrossRef
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Zurück zum Zitat N. Davies, D.E. Weibel, P. Blenkinsopp, N. Lockyer, R. Hill, J.C. Vickerman: Development and experimental application of a gold liquid metal ion source, Appl. Surf. Sci. 203/204, 223 (2003)CrossRef N. Davies, D.E. Weibel, P. Blenkinsopp, N. Lockyer, R. Hill, J.C. Vickerman: Development and experimental application of a gold liquid metal ion source, Appl. Surf. Sci. 203/204, 223 (2003)CrossRef
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Zurück zum Zitat I.S. Gilmore, M.P. Seah: G-SIMS of crystallisable organics, Appl. Surf. Sci. 203/204, 551 (2003)CrossRef I.S. Gilmore, M.P. Seah: G-SIMS of crystallisable organics, Appl. Surf. Sci. 203/204, 551 (2003)CrossRef
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Zurück zum Zitat I.S. Gilmore, M.P. Seah: Static SIMS: Towards unfragmented mass spectra – The G-SIMS procedure, Appl. Surf. Sci. 161, 465 (2000)CrossRef I.S. Gilmore, M.P. Seah: Static SIMS: Towards unfragmented mass spectra – The G-SIMS procedure, Appl. Surf. Sci. 161, 465 (2000)CrossRef
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Zurück zum Zitat M.P. Seah, F.M. Green, I.S. Gilmore: Cluster primary ion sputtering: Secondary ion intensities in static SIMS of organic materials, J. Phys. Chem. C 114, 5351 (2010)CrossRef M.P. Seah, F.M. Green, I.S. Gilmore: Cluster primary ion sputtering: Secondary ion intensities in static SIMS of organic materials, J. Phys. Chem. C 114, 5351 (2010)CrossRef
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Zurück zum Zitat L. De Chiffre, P. Lonardo, H. Trumpold, D.A. Lucca, G. Goch, C.A. Brown, J. Raja, H.N. Hansen: Quantitative characterisation of surface texture, CIRP Ann. 49(2), 635–652 (2000)CrossRef L. De Chiffre, P. Lonardo, H. Trumpold, D.A. Lucca, G. Goch, C.A. Brown, J. Raja, H.N. Hansen: Quantitative characterisation of surface texture, CIRP Ann. 49(2), 635–652 (2000)CrossRef
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Zurück zum Zitat T.R. Thomas: Rough Surfaces, 2nd edn. (Imperial College Press, London 1999) T.R. Thomas: Rough Surfaces, 2nd edn. (Imperial College Press, London 1999)
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Zurück zum Zitat K.J. Stout, L. Blunt: Three-Dimensional Surface Topography (Penton, London 2000) K.J. Stout, L. Blunt: Three-Dimensional Surface Topography (Penton, London 2000)
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Zurück zum Zitat ISO 1302:2002 Geometrical Product Specifications (GPS) – Indication of surface texture in technical product documentation (ISO, Geneva 2002) ISO 1302:2002 Geometrical Product Specifications (GPS) – Indication of surface texture in technical product documentation (ISO, Geneva 2002)
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Zurück zum Zitat ISO 3274:1996 Geometrical Product Specifications (GPS) – Surface texture: Profile method – Nominal characteristics of contact (stylus) instruments (ISO, Geneva 1996) ISO 3274:1996 Geometrical Product Specifications (GPS) – Surface texture: Profile method – Nominal characteristics of contact (stylus) instruments (ISO, Geneva 1996)
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Zurück zum Zitat ISO 4287:1997 Geometrical Product Specifications (GPS) – Surface texture: Profile method – Terms, definitions and surface texture parameters (ISO, Geneva 1997) ISO 4287:1997 Geometrical Product Specifications (GPS) – Surface texture: Profile method – Terms, definitions and surface texture parameters (ISO, Geneva 1997)
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Zurück zum Zitat ISO 4287:1997/Amd1:2009 Peak count number (ISO, Geneva 1997) ISO 4287:1997/Amd1:2009 Peak count number (ISO, Geneva 1997)
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Zurück zum Zitat ISO 4288:1996 Geometrical Product Specifications (GPS) – Surface texture: Profile method – Rules and procedures for the assessment of surface texture (ISO, Geneva 1996) ISO 4288:1996 Geometrical Product Specifications (GPS) – Surface texture: Profile method – Rules and procedures for the assessment of surface texture (ISO, Geneva 1996)
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Zurück zum Zitat ISO 5436-2:2001 Geometrical Product Specifications (GPS) – Surface texture: Profile method; Measurement standards – Part 2: Software measurement standards (ISO, Geneva 2001) ISO 5436-2:2001 Geometrical Product Specifications (GPS) – Surface texture: Profile method; Measurement standards – Part 2: Software measurement standards (ISO, Geneva 2001)
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Zurück zum Zitat ISO 8785:1998 Geometrical Product Specification (GPS) – Surface imperfections – Terms, definitions and parameters (ISO, Geneva 1998) ISO 8785:1998 Geometrical Product Specification (GPS) – Surface imperfections – Terms, definitions and parameters (ISO, Geneva 1998)
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Zurück zum Zitat ISO 11562:1996 Geometrical Product Specifications (GPS) – Surface texture: Profile method – Metrological characteristics of phase correct filters (ISO, Geneva 1996) ISO 11562:1996 Geometrical Product Specifications (GPS) – Surface texture: Profile method – Metrological characteristics of phase correct filters (ISO, Geneva 1996)
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Zurück zum Zitat ISO 12085:1996 Geometrical Product Specifications (GPS) – Surface texture: Profile method – Motif parameters (ISO, Geneva 1996) ISO 12085:1996 Geometrical Product Specifications (GPS) – Surface texture: Profile method – Motif parameters (ISO, Geneva 1996)
6.203.
Zurück zum Zitat ISO 12179:2000 Geometrical Product Specifications (GPS) – Surface texture: Profile method – Calibration of contact (stylus) instruments (ISO, Geneva 2000) ISO 12179:2000 Geometrical Product Specifications (GPS) – Surface texture: Profile method – Calibration of contact (stylus) instruments (ISO, Geneva 2000)
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Zurück zum Zitat ISO 13565-1:1996 Geometrical Product Specifications (GPS) – Surface texture: Profile method; Surfaces having stratified functional properties – Part 1: Filtering and general measurement conditions (ISO, Geneva 1996) ISO 13565-1:1996 Geometrical Product Specifications (GPS) – Surface texture: Profile method; Surfaces having stratified functional properties – Part 1: Filtering and general measurement conditions (ISO, Geneva 1996)
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Zurück zum Zitat ISO 13565-2:1996 Geometrical Product Specifications (GPS) – Surface texture: Profile method; Surfaces having stratified functional properties – Part 2: Height characterization using the linear material ratio curve (ISO, Geneva 1996) ISO 13565-2:1996 Geometrical Product Specifications (GPS) – Surface texture: Profile method; Surfaces having stratified functional properties – Part 2: Height characterization using the linear material ratio curve (ISO, Geneva 1996)
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Zurück zum Zitat ISO 13565-3:1998 Geometrical Product Specifications (GPS) – Surface texture: Profile method; Surfaces having stratified functional properties – Part 3: Height characterization using the material probability curve (ISO, Geneva 1998) ISO 13565-3:1998 Geometrical Product Specifications (GPS) – Surface texture: Profile method; Surfaces having stratified functional properties – Part 3: Height characterization using the material probability curve (ISO, Geneva 1998)
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Zurück zum Zitat ISO/TS 16610-1:2006 Geometrical product specifications (GPS) – Filtration – Part 1: Overview and basic concepts (ISO, Geneva 2006) ISO/TS 16610-1:2006 Geometrical product specifications (GPS) – Filtration – Part 1: Overview and basic concepts (ISO, Geneva 2006)
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Zurück zum Zitat ISO/TS 16610-20:2006 Geometrical product specifications (GPS) – Filtration – Part 20: Linear profile filters: Basic concepts (ISO, Geneva 2006) ISO/TS 16610-20:2006 Geometrical product specifications (GPS) – Filtration – Part 20: Linear profile filters: Basic concepts (ISO, Geneva 2006)
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Zurück zum Zitat ISO/TS 16610-22:2006 Geometrical product specifications (GPS) – Filtration – Part 22: Linear profile filters: Spline filters (ISO, Geneva 2006) ISO/TS 16610-22:2006 Geometrical product specifications (GPS) – Filtration – Part 22: Linear profile filters: Spline filters (ISO, Geneva 2006)
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Zurück zum Zitat ISO/TS 16610-28:2010 Geometrical product specifications (GPS) – Filtration – Part 28: Profile filters: End effects (ISO Geneva 2010) ISO/TS 16610-28:2010 Geometrical product specifications (GPS) – Filtration – Part 28: Profile filters: End effects (ISO Geneva 2010)
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Zurück zum Zitat ISO/TS 16610-29:2006 Geometrical product specifications (GPS) – Filtration – Part 29: Linear profile filters: Spline wavelets (ISO, Geneva 2006) ISO/TS 16610-29:2006 Geometrical product specifications (GPS) – Filtration – Part 29: Linear profile filters: Spline wavelets (ISO, Geneva 2006)
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Zurück zum Zitat ISO/TS 16610-31:2010 Geometrical product specifications (GPS) – Filtration – Part 31: Robust profile filters: Gaussian regression filters (ISO, Geneva 2010) ISO/TS 16610-31:2010 Geometrical product specifications (GPS) – Filtration – Part 31: Robust profile filters: Gaussian regression filters (ISO, Geneva 2010)
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Zurück zum Zitat ISO/TS 16610-32:2009 Geometrical product specifications (GPS) – Filtration – Part 32: Robust profile filters: Spline filters (ISO, Geneva 2009) ISO/TS 16610-32:2009 Geometrical product specifications (GPS) – Filtration – Part 32: Robust profile filters: Spline filters (ISO, Geneva 2009)
6.215.
Zurück zum Zitat ISO/TS 16610-40:2006 Geometrical product specifications (GPS) – Filtration – Part 40: Morphological profile filters: Basic concepts (ISO, Geneva 2006) ISO/TS 16610-40:2006 Geometrical product specifications (GPS) – Filtration – Part 40: Morphological profile filters: Basic concepts (ISO, Geneva 2006)
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Zurück zum Zitat ISO/TS 16610-41:2006 Geometrical product specifications (GPS) – Filtration – Part 41: Morphological profile filters: Disk and horizontal line-segment filters (ISO, Geneva 2006) ISO/TS 16610-41:2006 Geometrical product specifications (GPS) – Filtration – Part 41: Morphological profile filters: Disk and horizontal line-segment filters (ISO, Geneva 2006)
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Zurück zum Zitat ISO/TS 16610-48:2006 Geometrical product specifications (GPS) – Filtration – Part 49: Morphological profile filters: Scale space techniques (ISO, Geneva 2006) ISO/TS 16610-48:2006 Geometrical product specifications (GPS) – Filtration – Part 49: Morphological profile filters: Scale space techniques (ISO, Geneva 2006)
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Zurück zum Zitat ISO 25178-6:2010 Geometrical product specifications (GPS) – Surface texture: Areal – Part 6: Classification of methods for measuring surface texture (ISO, Geneva 2010) ISO 25178-6:2010 Geometrical product specifications (GPS) – Surface texture: Areal – Part 6: Classification of methods for measuring surface texture (ISO, Geneva 2010)
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Zurück zum Zitat ISO 25178-602:2010 Geometrical product specifications (GPS) – Surface texture: Areal – Part 602: Nominal characteristics of noncontact (confocal chromatic probe) instruments (ISO, Geneva 2010) ISO 25178-602:2010 Geometrical product specifications (GPS) – Surface texture: Areal – Part 602: Nominal characteristics of noncontact (confocal chromatic probe) instruments (ISO, Geneva 2010)
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Zurück zum Zitat ISO 26178-701:2010 Geometrical product specifications (GPS) – Surface texture: Areal – Part 701: Calibration and measurement standards for contact (stylus) instruments (ISO, Geneva 2010) ISO 26178-701:2010 Geometrical product specifications (GPS) – Surface texture: Areal – Part 701: Calibration and measurement standards for contact (stylus) instruments (ISO, Geneva 2010)
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Zurück zum Zitat ISO/DIS 25178-3.2 Geometrical product specifications (GPS) – Surface texture: Areal – Part 3: Specification operators ISO/DIS 25178-3.2 Geometrical product specifications (GPS) – Surface texture: Areal – Part 3: Specification operators
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Zurück zum Zitat ISO/DIS 25178-7 Geometrical product specifications (GPS) – Surface texture: Areal – Part 7: Software measurement standards ISO/DIS 25178-7 Geometrical product specifications (GPS) – Surface texture: Areal – Part 7: Software measurement standards
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Zurück zum Zitat ISO/DIS 25178-604 Geometrical product specifications (GPS) – Surface texture: Areal – Part 604: Nominal characteristics of noncontact (coherence scanning interferometry) instruments ISO/DIS 25178-604 Geometrical product specifications (GPS) – Surface texture: Areal – Part 604: Nominal characteristics of noncontact (coherence scanning interferometry) instruments
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Metadaten
Titel
Surface and Interface Characterization
verfasst von
Martin Seah, Dr.
Leonardo De Chiffre
Copyright-Jahr
2011
DOI
https://doi.org/10.1007/978-3-642-16641-9_6

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