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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 3/2015

01.03.2015

Synthesis of β-Ga2O3 nanorods by catalyzed chemical vapor deposition and their characterization

verfasst von: Jiyong Wei, Zongjuan Zang, Chengshan Xue, Feng Shi

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 3/2015

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Abstract

β-Ga2O3 nanorods have been synthesized by chemical vapor deposition using CaF2 as dispersant and Ni2+ ions as catalyst. The composition, crystal structure, morphology, and optical property were characterized. X-ray diffraction data indicate the product to be high purity β-Ga2O3. The nanorods are 40–100 nm in diameter and about several microns in length and present a core–shell structure. A broad and strong emission band ranging from 300 to 650 nm exists with four Gaussian bands centered at 357 (UV), 420 (blue), 475 (dark blue), and 529 nm (green). Growth of β-Ga2O3 nanorods agrees with the vapor–solid growth mechanism.
Vorheriger Artikel Sintering temperature dependence of optimized microstructure formation of BaFe12O19 using sol–gel method
Nächster Artikel Phase transition and electrical properties of Ni1−x Zn x Mn2O4 (0 ≤ x ≤ 1.0) NTC ceramics

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Metadaten
Titel
Synthesis of β-Ga2O3 nanorods by catalyzed chemical vapor deposition and their characterization
verfasst von
Jiyong Wei
Zongjuan Zang
Chengshan Xue
Feng Shi
Publikationsdatum
01.03.2015
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 3/2015
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-014-2548-0

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