Skip to main content
Fachgebiete
Automobil + Motoren Bauwesen + Immobilien Business IT + Informatik Elektrotechnik + Elektronik Energie + Nachhaltigkeit Finance + Banking Management + Führung Marketing + Vertrieb Maschinenbau + Werkstoffe Versicherung + Risiko
DE
EN
Bücher
Zeitschriften
Themenseiten
Organisationspsychologie Projektmanagement Marketing Smart Manufacturing
Weitere Formate
Podcasts Webinare Technik Webinare Wirtschaft Kongresse Veranstaltungskalender Awards
Jetzt Einzelzugang starten
Zugang für Unternehmen
Referenzkunden
SLX-Digitalkonferenz: Zukunftswerkstatt 2024

Mehr Umsatz mit Top-Kontakten

Am 7. Mai erfahren Sie, wie Vertriebsteams Leadgenerierung, Leadnurturing und Leadstrategien effizient steuern können.
Erweiterte Suche
Anmelden
nach oben
Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 11/2013

01.11.2013

Synthesis of Cu2ZnSnS4 films from sequentially electrodeposited Cu–Sn–Zn precursors and their structural and optical properties

verfasst von: Xiancong He, Honglie Shen, Jinhong Pi, Chuanxiang Zhang, Yu Hao

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 11/2013

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

The Cu2ZnSnS4 (CZTS) films are successfully prepared using a process of sequentially electrodeposited Cu–Sn–Zn precursors by a novel electrolyte formula and optimized parameters on Mo substrate, succeeded by annealing in saturated sulfur atmosphere. The results show that the Cu/Sn/Zn precursor sequence is strict, and optimized electro-deposition parameters are as follows: −0.6 V, 5 min for Cu, −1.2 V, 2 min for Sn, and −1.35 V, 10 min for Zn. Layered precursors firstly alloy into Cu6Sn5 and CuZn binary phases under low annealing temperature. Then Cu6Sn5 and CuZn alloys decompose in sulfur atmosphere, and form CuS, SnS and ZnS binary phases. Cu2SnS3 ternary phase forms through reaction between CuS and SnS with increasing the temperature. Finally, the CZTS film is synthesized through reaction among binary and ternary sulfides. The photoluminescence peak from the CZTS films synthesized at 550 °C for 1 h is about at 1.49 eV.
Vorheriger Artikel Microcrystalline silicon films fabricated by bias-assisted hot-wire chemical vapor deposition
Nächster Artikel Photoinduced operation and diagnostic of superconductivity in the MgB2 films

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Jetzt informieren
Literatur
1.
A. Miguel, K. Contreras, J. Ramanathan et al., Diode characteristics in state-of-the-art ZnO/CdS/Cu(In1−x Gax)Se2 solar cells. Prog. Photovolt. Res. Appl. 13, 209–216 (2005)CrossRef
2.
M.A. Green, K. Emery, Y. Hishikawa et al., Solar cell efficiency tables. Prog. Photovolt. Res. Appl. 20, 12–20 (2012)CrossRef
3.
X. Wu, High-efficiency polycrystalline CdTe thin-film solar cells. Sol. Energy 77, 803–814 (2004)CrossRef
4.
C. Wadia, A.P. Alivisatos, D.M. Kammen, Materials availability expands the opportunity for large-scale photovoltaics deployment. Environ. Sci. Technol. 43, 2072–2077 (2009)CrossRef
5.
K. Ito, T. Nakazawa, Electrical and optical properties of stannite-type quaternary semiconductor thin films. Jpn. J. Appl. Phys. 27, 2094–2097 (1988)CrossRef
6.
H. Katagiri, K. Jimbo, S. Yamada et al., Enhanced conversion efficiencies of Cu2ZnSnS4-based thin film solar cells by using preferential etching technique. Appl. Phys. Express 1(2), 041201 (2008)CrossRef
7.
B. Shin, O. Gunawan, Y. Zhu, N.A. Bojarczuk, S.J. Chey, S. Guha, Thin film solar cell with 8.4 % power conversion efficiency using an earth abundant Cu2ZnSnS4 absorber. J. Prog. Photovolt. Res. Appl. 21, 72–76 (2013)CrossRef
8.
D.A. Barkhouse, O. Gunawan, T. Gokmen et al., Device characteristics of a 10.1 % hydrazine-processed Cu2ZnSn(Se,S)4 solar cell. Prog. Photovolt. Res. Appl. 20, 6–11 (2012)CrossRef
9.
T.K. Todorov, J. Tang, S. Bag, O. Gunawan, T. Gokmen, Y. Zhu, D.B. Mitzi, Beyond 11 % efficiency: characteristics of state-of-the-art Cu2ZnSn(S, Se)4 solar cells. Adv. Energy Mater. 3, 34–38 (2013)CrossRef
10.
R. Schurr, A. Hõlzing, S. Jost et al., The crystallisation of Cu2ZnSnS4 thin film solar cell absorbers from co-electroplated Cu–Zn–Sn precursors. Thin Solid Films 517, 2465–2468 (2009)CrossRef
11.
H. Araki, Y. Kubo, K. Jimbo et al., Preparation of Cu2ZnSnS4 thin films by sulfurization of co-electroplated Cu–Zn–Sn precursors. Phys. Status Solidi C 6, 1266–1268 (2009)CrossRef
12.
Y.J. Wang, J.B. Ma, P. Liu et al., Cu2ZnSnS4 films deposited by a co-electrodeposition- annealing route. Mater. Lett. 77, 13–16 (2012)CrossRef
13.
J.J. Scragg, P.J. Dale, L.M. Peter, Synthesis and characterization of Cu2ZnSnS4 absorber layers by an electrodeposition-annealing route. Thin Solid Films 517, 2481–2484 (2009)CrossRef
14.
H. Araki, Y. Kubo, A. Mikaduki et al., Preparation of Cu2ZnSnS4 thin films by sulfurizing electroplated precursors. Sol. Energy Mater. Sol. Cells 93, 996–999 (2009)CrossRef
15.
J.J. Scragg, P.J. Dale, L.M. Peter, Towards sustainable materials for solar energy conversion: preparation and photoelectrochemical characterization of Cu2ZnSnS4. Electro. Commun. 10, 639–642 (2008)CrossRef
16.
J.J. Scragg, D.M. Berg, P.J. Dale, A 3.2 % efficient Kesterite device from electrodeposited stacked elemental layers. J. Electroanal. Chem. 646, 52–59 (2010)CrossRef
17.
M. Kurihara, D. Berg, J. Fischer et al., Kesterite absorber layer uniformity from electrodeposited precursors. Phys. Status Solidi C 6, 1241–1244 (2009)CrossRef
18.
L.L. Baarbosa, M.R.H. de Almeida, R.M. Carlos et al., Study and development of an alkaline bath for copper deposition containing sorbitol as complexing agent and morphological characterization of the copper film. Surf. Coat. Technol. 192, 145–153 (2005)CrossRef
19.
M. Pourbaix, Applications of electrochemistry in corrosion science and in practice. Corros. Sci. 14(1), 25–82 (1974)
20.
J.L. Fang, Theory & Application of Coordination Compounds in Electroplating (Chemical Industry Press, China, 2007), pp. 360–363
21.
J.P. Leitäo, N.M. Santos, P.A. Fernandes et al., Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-based thin films. Phys. Rev. B 84(8), 024120 (2011)CrossRef
22.
J.P. Leitäo, N.M. Santos, P.A. Fernandes et al., Study of optical and structural properties of Cu2ZnSnS4 thin films. Thin Solid Films 519, 7390–7393 (2011)CrossRef
Metadaten
Titel
Synthesis of Cu2ZnSnS4 films from sequentially electrodeposited Cu–Sn–Zn precursors and their structural and optical properties
verfasst von
Xiancong He
Honglie Shen
Jinhong Pi
Chuanxiang Zhang
Yu Hao
Publikationsdatum
01.11.2013
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 11/2013
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-013-1445-2

Weitere Artikel der Ausgabe 11/2013

Journal of Materials Science: Materials in Electronics 11/2013 Zur Ausgabe

OriginalPaper

Size effect on piezoelectric properties of barium stannate titanate ceramics prepared from nanoparticles

OriginalPaper

Effect of annealing temperature on optical and electrical properties of ZrO2–SnO2 nanocomposite thin films

OriginalPaper

Effect of nanosized graphite on properties of Sn–Bi solder

OriginalPaper

Electrospinning fabrication and electrochemical properties of LiFePO4/C composite nanofibers

OriginalPaper

Cu2ZnSnS4 films by paste coating and their optoelectronic properties

OriginalPaper

Preparation and thermal stability of amine-terminated polyesterimide modified epoxy resin

Neuer Inhalt

    Bildnachweise