nach oben

Erschienen in:

2013 | OriginalPaper | Buchkapitel

12. Synthesis, Properties, and Applications of One-Dimensional Transition Metal Silicide Nanostructures

verfasst von : Guangwei She, Hailong Liu, Lixuan Mu, Wensheng Shi

Erschienen in: Silicon-based Nanomaterials

Verlag: Springer New York

Einloggen

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config

KI-gestützte Suche

Aus

Abstract

One-dimensional (1D) nanostructures of transition metal silicide (TMS) have attracted more attention due to their unique properties and potential applications in microelectronics. A variety of synthetic approaches were developed to fabricate 1D TMS nanostructures. Chemical vapor deposition (CVD) is the most widely used method to synthesize 1D TMS nanostructures. Various precursors and growth mechanisms are involved in the CVD processes. Other methods such as chemical vapor transport (CVT) method, silicidation method, reactive epitaxial method, hydrothermal method, were also successfully employed for the formation of 1D TMS nanostructures. Electrical transport measurements reveal that many TMS nanowires exhibit metallic behavior with extremely high conductivity. At the same time, semiconducting behaviors were observed in some situations. Some silicide nanowires (silicides of Fe, Co, Ni, Cr, Mn, etc.) have ferromagnetic properties, even at room temperature. Unique properties such as field-emission, optical, thermoelectric, mechanical were also investigated in the 1D TMS nanostructures. Based on these properties, 1D TMS nanostructures were utilized in microelectronic devices, lithium ion batteries, memory device and capacitor, etc.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

über 102.000 Bücher
über 537 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Finance + Banking
Management + Führung
Marketing + Vertrieb
Maschinenbau + Werkstoffe
Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

über 67.000 Bücher
über 390 Zeitschriften

aus folgenden Fachgebieten:

Automobil + Motoren
Bauwesen + Immobilien
Business IT + Informatik
Elektrotechnik + Elektronik
Energie + Nachhaltigkeit
Maschinenbau + Werkstoffe

Jetzt Wissensvorsprung sichern!

Jetzt informieren

Vorheriges Kapitel Impact of Defects and Doping on Electron Transport in SiCNTs

Nächstes Kapitel Integration of Strain Free III–V Quantum Dots on Silicon

Dimitriadis, C.A., Werner, J.H., Logothetidis, S., Stutzmann, M., Weber, J., Nesper, R.: Electronic properties of semiconducting FeSi\(_{2}\) films. J. Appl. Phys. 68, 1726–1734 (1990)

Starke, U., Weiss, W., Kutschera, M., Bandorf, R., Heinz, K.: High quality iron silicide films by simultaneous deposition of iron and silicon on Si(111). J. Appl. Phys. 91, 6154–6161 (2002)

Ouyang, L., Thrall, E.S., Deshmukh, M.M., Park, H.: vapor-phase synthesis and characterization of \(\varepsilon \)-FeSi nanowires. Adv. Mater. 18, 1437–1440 (2006)

Lin, H.K., Tzeng, Y.F., Wang, C.H., Tai, N.H., Lin, I.N., Lee, C.Y., Chiu, H.T.: Ti\(_{5}\)Si\(_{3}\) nanowire and its field emission property. Chem. Mater. 20, 2429–2431 (2008)

Lin, H.K., Cheng, H.A., Lee, C.Y., Chiu, H.T.: Chemical vapor deposition of TiSi nanowires on C54 TiSi2 thin film: an amorphous titanium silicide interlayer assisted nanowire growth. Chem. Mater. 21, 5388–5396 (2009)

In, J., Seo, K., Lee, S., Yoon, H., Park, J., Lee, G., Kim, B.: Morphology-tuned synthesis of single-crystalline V\(_{5}\)Si\(_{3}\) nanotubes and nanowires. J. Phys. Chem. C 113, 12996–13001 (2009)

Higgins, J.M., Ding, R., DeGrave, J.P., Jin, S.: Signature of helimagnetic ordering in single-crystal MnSi nanowires. Nano Lett. 10, 1605–1610 (2010)

Liang, S., Fang, X., Xia, T.L., Qing, Y., Guo, Z.X.: Self-assembled magnetic nanohead-FeSi nanowire epitaxial heterojunctions by chemical vapor deposition. J. Phys. Chem. C 114, 16187–16190 (2010)

Decker, C.A., Solanki, R., Freeouf, J.L., Carruthers, J.R., Evans, D.R.: Directed growth of nickel silicide nanowires. Appl. Phys. Lett. 84, 1389–1391 (2004)

10.

Dubois, L.H., Nuzzo, R.G.: The decomposition of silane and germane on Ni(111): implications for heterogeneous catalysis. Surf. Sci. 149, 133–145 (1985)

11.

Yan, X.Q., Yuan, H.J., Wang, J.X., Liu, D.F., Zhou, Z.P., Gao, Y., Song, L., Liu, L.F., Zhou, W.Y., Wang, G., Xie, S.S.: Synthesis and characterization of a large amount of branched N\(_{2}\)Si nanowires. Appl. Phys. A Mater. Sci. Process. 79, 1853–1856 (2004)

12.

Lee, K.S., Mo, Y.H., Nahm, K.S., Shim, H.W., Suh, E.K., Kim, J.R., Kim, J.J.: Anomalous growth and characterization of carbon-coated nickel silicide nanowires. Chem. Phys. Lett. 384, 215–218 (2004)

13.

Kim, C.J., Kang, K., Woo, Y.S., Ryu, K.G., Moon, H., Kim, J.M., Zang, D.S., Jo, M.H.: Spontaneous chemical vapor growth of NiSi nanowires and their metallic properties. Adv. Mater. 19, 3637–3642 (2007)

14.

Kang, K., Kim, S.K., Kim, C.J., Jo, M.H.: The role of NiO\(_{x}\) overlayers on spontaneous growth of NiSi\(_{x}\) nanowires from Ni seed layers. Nano Lett. 8, 431–436 (2008)

15.

Zhang, H.L., Li, F., Liu, C., Chen, H.M.: The facile synthesis of nickel silicide nanobelts and nanosheets and their application in electrochemical energy storage. Nanotechnology 19, 165606 (2008)

16.

Chueh, Y.L., Chou, L.J., Cheng, S.L., Chen, L.J., Tsai, C.J., Hsu, C.M., Kung, S.C.: Synthesis and characterization of metallic TaSi\(_{2}\) nanowires. Appl. Phys. Lett. 87, 223113–223113 (2005)

17.

Chueh, Y.L., Ko, M.T., Chou, L.J., Chen, L.J., Wu, C.S., Chen, C.D.: TaSi\(_{2}\) nanowires: a potential field emitter and interconnect. Nano Lett. 6, 1637–1644 (2006)

18.

Chou, L.J., Chueh, Y.L., Ko, M.T.: Interconnect and contact for nanoelectronics: metallic TaSi\(_{2}\) nanowires. Thin Solid Films 515, 8109–8112 (2007)

19.

Tang, C., Bando, Y., Golberg, D., Ding, X., Qi, S.: Boron nitride nanotubes filled with Ni and NiSi2 nanowires in situ. J. Phys. Chem. B 107, 6539–6543 (2003)

20.

Xiang, B., Wang, Q.X., Wang, Z., Zhang, X.Z., Liu, L.Q., Xu, J., Yu, D.P.: Synthesis and field emission properties of TiSi\(_{2}\) nanowires. Appl. Phys. Lett. 86, 243103–243103 (2005)

21.

Zou, C., Zhang, X., Jing, G., Zhang, J., Liao, Z., Yu, D.: Synthesis and electrical properties of TiSi\(_{2}\) nanocables. Appl. Phys. Lett. 92, 253102–253103 (2008)

22.

Zhang, Z.Y., Wu, X.L., Yang, L.W., Huang, G.S., Siu, G.G., Chu, P.K.: Catalytic growth of \(\alpha \)-FeSi\(_{2}\) and silicon nanowires. J. Cryst. Growth 280, 286–291 (2005)

23.

Joshi, R.K., Yoshimura, M., Tanaka, K., Ueda, K., Kumar, A., Ramgir, N.: Synthesis of vertically aligned Pd\(_{2}\)Si nanowires in microwave plasma enhanced chemical vapor deposition system. J. Phys. Chem. C 112, 13901–13904 (2008)

24.

Chang, M.T., Chen, C.Y., Chou, L.J., Chen, L.J.: Core-shell chromium silicide-silicon nanopillars: a contact material for future nanosystems. ACS Nano 3, 3776–3780 (2009)

25.

Higgins, J.M., Ding, R., Jin, S.: Synthesis and characterization of manganese-rich silicide (\(\alpha \)-Mn\(_{5}\)Si\(_{3}\), \(\beta \)-Mn\(_{5}\)Si\(_{3}\), and \(\beta \)-Mn\(_{3}\)Si) nanowires. Chem. Mater. 23, 3848–3853 (2011)

26.

Chang, C.M., Chang, Y.C., Lee, C.Y., Yeh, P.H., Lee, W.F., Chen, L.J.: Ti\(_{5}\)Si\(_{4}\) nanobats with excellent field emission properties. J. Phys. Chem. C 113, 9153–9156 (2009)

27.

Chen, C.Y., Lin, Y.K., Hsu, C.W., Wang, C.Y., Chueh, Y.L., Chen, L.J., Lo, S.C., Chou, L.J.: Coaxial metal-silicide Ni\(_{2}\)Si/C54-TiSi\(_{2}\) nanowires. Nano Lett. 12, 2254–2259 (2012)

28.

Du, J., Du, P., Hao, P., Huang, Y., Ren, Z., Han, G., Weng, W., Zhao, G.: Growth mechanism of TiSi nanopins on Ti\(_{5}\)Si\(_{3}\) by atmospheric pressure chemical vapor deposition. J. Phys. Chem. C 111, 10814–10817 (2007)

29.

Jun, D., Piyi, D., Peng, H., Yanfei, H., Zhaodi, R., Wenjian, W., Gaorong, H., Gaoling, Z.: Self-induced preparation of TiSi nanopins by chemical vapor deposition. Nanotechnology 18, 345605 (2007)

30.

Du, J., Ren, Z., Tao, K., Hu, A., Hao, P., Huang, Y., Zhao, G., Weng, W., Han, G., Du, P.: Self-induced preparation of assembled shrubbery TiSi nanowires by chemical vapor deposition. Cryst. Growth Des. 8, 3543–3548 (2008)

31.

Ren, Z., Hu, A., Tao, K., Du, J., Weng, W., Ma, N., Du, P.: Preparation of TiSi nanowires by APCVD used for improving dielectric properties of PST thin film. Thin Solid Films 517, 5014–5017 (2009)

32.

Ren, Z., Hao, P., Du, J., Han, G., Weng, W., Ma, N., Du, P.: Self-assembly of TiSi nanowires on TiSi\(_{2}\) thin films by APCVD. J. Alloy. Compd. 509, 7519–7524 (2011)

33.

Ren, Z., Shen, M., Han, G., Weng, W., Ma, N., Du, P.: Influence of substrates on the formation of the TiSi nanowire by atmosphere pressure chemical vapor deposition. J. Nanosci. Nanotechnol. 11, 11151–11155 (2011)

34.

Zhou, S., Liu, X., Lin, Y., Wang, D.: Spontaneous growth of highly conductive two-dimensional single-crystalline TiSi2 nanonets. Angew. Chem. Int. Ed. 47, 7681–7684 (2008)

35.

Zhou, S., Liu, X., Lin, Y., Wang, D.: Rational synthesis and structural characterizations of complex TiSi\(_{2}\) nanostructures. Chem. Mater. 21, 1023–1027 (2009)

36.

Zhou, S., Xie, J., Wang, D.: Understanding the growth mechanism of titanium disilicide nanonets. ACS Nano 5, 4205–4210 (2011)

37.

Zhang, Y., Geng, D., Liu, H., Banis, M.N., Ionescu, M.I., Li, R., Cai, M., Sun, X.: Designed growth and characterization of radially aligned Ti\(_{5}\)Si\(_{3}\) nanowire architectures. J. Phys. Chem. C 115, 15885–15889 (2011)

38.

Ham, M.H., Lee, J.W., Moon, K.J., Choi, J.H., Myoung, J.M.: Single-crystalline ferromagnetic Mn4Si7 nanowires. J. Phys. Chem. C 113, 8143–8146 (2009)

39.

Lee, S.T., Zhang, Y.F., Wang, N., Tang, Y.H., Bello, I., Lee, C.S., Chung, Y.W.: Semiconductor nanowires from oxides. J. Mater. Res. 14, 4503–4507 (1999)

40.

Higgins, J.M., Schmitt, A.L., Guzei, I.A., Jin, S.: Higher manganese silicide nanowires of nowotny chimney ladder phase. J. Am. Chem. Soc. 130, 16086–16094 (2008)

41.

Schmitt, A.L., Zhu, L., D. Schmei\(\beta \)er, F.J. Himpsel, Jin. S.: Metallic single-crystal CoSi nanowires via chemical vapor deposition of single-source precursor. J. Phys. Chem. B 110, 18142–18146 (2006)

42.

Schmitt, A.L., Bierman, M.J., Schmeisser, D., Himpsel, F.J., Jin, S.: Synthesis and properties of single-crystal FeSi nanowires. Nano Lett. 6, 1617–1621 (2006)

43.

Schmitt, A.L., Higgins, J.M., Jin, S.: Chemical synthesis and magnetotransport of magnetic semiconducting Fe\(_{1-x}\)Co\(_{x}\)Si alloy nanowires. Nano Lett. 8, 810–815 (2008)

44.

Schmitt, A.L., Jin, S.: Selective patterned growth of silicide nanowires without the use of metal catalysts. Chem. Mater. 19, 126–128 (2006)

45.

Higgins, J.M., Carmichael, P., Schmitt, A.L., Lee, S., Degrave, J.P., Jin, S.: Mechanistic investigation of the growth of Fe\(_{1-x}\)Co\(_{x}\)Si (0 \(\le \) x \(\le \) 1) and Fe\(_{5}\)(Si\(_{1-y}\)Ge\(_{y})_{3}\) (0 \(\le \) y \(\le \) 0.33) ternary alloy nanowires. ACS Nano 5, 3268–3277 (2011)

46.

Song, Y., Schmitt, A.L., Jin, S.: Ultralong single-crystal metallic Ni2Si nanowires with low resistivity. Nano Lett. 7, 965–969 (2007)

47.

Szczech, J.R., Schmitt, A.L., Bierman, M.J., Jin, S.: Single-crystal semiconducting chromium disilicide nanowires synthesized via chemical vapor transport. Chem. Mater. 19, 3238–3243 (2007)

48.

Song, Y., Jin, S.: Synthesis and properties of single-crystal \(\beta _{3}\)-N\(_{3}\)Si nanowires. Appl. Phys. Lett. 90, 173122–173123 (2007)

49.

Szczech, J.R., Jin, S.: Epitaxially-hyperbranched FeSi nanowires exhibiting merohedral twinning. J. Mater. Chem. 20, 1375–1382 (2010)

50.

Seo, K., Varadwaj, K.S.K., Mohanty, P., Lee, S., Jo, Y., Jung, M.H., Kim, J., Kim, B.: Magnetic properties of single-crystalline CoSi nanowires. Nano Lett. 7, 1240–1245 (2007)

51.

Seo, K., Varadwaj, K.S.K., Cha, D., In, J., Kim, J., Park, J., Kim, B.: Synthesis and electrical properties of single crystalline CrSi\(_{2}\) nanowires. J. Phys. Chem. C 111, 9072–9076 (2007)

52.

Varadwaj, K.S.K., Seo, K., In, J., Mohanty, P., Park, J., Kim, B.: Phase-controlled growth of metastable Fe\(_{5}\)Si\(_{3}\) nanowires by a vapor transport method. J. Am. Chem. Soc. 129, 8594–8599 (2007)

53.

Seo, K., Yoon, H., Ryu, S.W., Lee, S., Jo, Y., Jung, M.H., Kim, J., Choi, Y.K., Kim, B.: Itinerant helimagnetic single-crystalline MnSi nanowires. ACS Nano 4, 2569–2576 (2010)

54.

Seo, K., Lee, S., Yoon, H., In, J., Varadwaj, K.S.K., Jo, Y., Jung, M.-H., Kim, J., Kim, B.: Composition-tuned Co\(_{n}\)Si nanowires: location-selective simultaneous growth along temperature gradient. ACS Nano 3, 1145–1150 (2009)

55.

Zhang, Z., Wong, L.M., Ong, H.G., Wang, X.J., Wang, J.L., Wang, S.J., Chen, H., Wu, T.: Self-assembled shape- and orientation-controlled synthesis of nanoscale Cu\(_{3}\)Si triangles, squares, and wires. Nano Lett. 8, 3205–3210 (2008)

56.

Lee, C.Y., Lu, M.P., Liao, K.F., Lee, W.F., Huang, C.T., Chen, S.Y., Chen, L.J.: Free-standing single-crystal NiSi\(_{2}\) nanowires with excellent electrical transport and field emission properties. J. Phys. Chem. C 113, 2286–2289 (2009)

57.

Wang, H., Wu, J.C., Shen, Y., Li, G., Zhang, Z., Xing, G., Guo, D., Wang, D., Dong, Z., Wu, T.: CrSi\(_{2}\) hexagonal nanowebs. J. Am. Chem. Soc. 132, 15875–15877 (2010)

58.

In, J., Varadwaj, K.S.K., Seo, K., Lee, S., Jo, Y., Jung, M.H., Kim, J., Kim, B.: Single-crystalline ferromagnetic Fe\(_{1-x}\)Co\(_{x}\)Si nanowires. J. Phys. Chem. C 112, 4748–4752 (2008)

59.

Li, C.P., Wang, N., Wong, S.P., Lee, C.S., Lee, S.T.: Metal silicide/silicon nanowires from metal vapor vacuum arc implantation. Adv. Mater. 14, 218–221 (2002)

60.

Wu, Y., Xiang, J., Yang, C., Lu, W., Lieber, C.M.: Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures. Nature 430, 61–65 (2004)

61.

Liu, B., Wang, Y., Dilts, S., Mayer, T.S., Mohney, S.E.: Silicidation of silicon nanowires by platinum. Nano Lett. 7, 818–824 (2007)

62.

Lu, K.C., Tu, K.N., Wu, W.W., Chen, L.J., Yoo, B.Y., Myung, N.V.: Point contact reactions between Ni and Si nanowires and reactive epitaxial growth of axial nano-NiSi/Si. Appl. Phys. Lett. 90, 253111–253113 (2007)

63.

Lu, K.C., Wu, W.-W., Wu, H.-W., Tanner, C.M., Chang, J.P., Chen, L.J., Tu, K.N.: In situ Control of atomic-scale si layer with huge strain in the nanoheterostructure NiSi/Si/NiSi through point contact reaction. Nano Lett. 7, 2389–2394 (2007)

64.

Chou, Y.C., Wu, W.W., Cheng, S.L., Yoo, B.Y., Myung, N., Chen, L.J., Tu, K.N.: In-situ TEM observation of repeating events of nucleation in epitaxial growth of nano CoSi\(_{2}\) in nanowires of Si. Nano Lett. 8, 2194–2199 (2008)

65.

Weber, W.M., Geelhaar, L., Unger, E., Chèze, C., Kreupl, F., Riechert, H., Lugli, P.: Silicon to nickel-silicide axial nanowire heterostructures for high performance electronics. Phys. Status Solidi (b) 244 (2007) 4170–4175

66.

Lin, Y.C., Lu, K.C., Wu, W.W., Bai, J., Chen, L.J., Tu, K.N., Huang, Y.: Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices. Nano Lett. 8, 913–918 (2008)

67.

Lin, Y.C., Chen, Y., Xu, D., Huang, Y.: Growth of nickel silicides in Si and Si/SiO\(_{x}\) core/shell nanowires. Nano Lett. 10, 4721–4726 (2010)

68.

Liu, H.L., She, G.W., Ling, S.T., Mu, L.X., Shi, W.S.: Ferromagnetic Si/Mn\(_{27}\)Si\(_{47}\)core/shell nanowire arrays. J. Appl. Phys. 109, 4 (2011)

69.

Liu, H., She, G., Mu, L., Shi, W.: Temperature-dependent structure and phase variation of nickel silicide nanowire arrays prepared by in situ silicidation. Mater. Res. Bull. 47, 3991–3994 (2012)

70.

Chen, Y., Ohlberg, D.A.A., Medeiros-Ribeiro, G., Chang, Y.A., Williams, R.S.: Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001). Appl. Phys. Lett. 76, 4004–4006 (2000)

71.

Chen, Y., Ohlberg, D.A.A., Williams, R.S.: Nanowires of four epitaxial hexagonal silicides grown on Si(001). J. Appl. Phys. 91, 3213–3218 (2002)

72.

Zou, Z.Q., Wang, H., Wang, D., Wang, Q.K., Mao, J.J., Kong, X.Y.: Epitaxial growth of manganese silicide nanowires on Si(111)-7 x 7 surfaces. Appl. Phys. Lett. 90, 133111–133113 (2007)

73.

Dan, W., Zhi-Qiang, Z.: Formation of manganese silicide nanowires on Si(111) surfaces by the reactive epitaxy method. Nanotechnology 20, 275607 (2009)

74.

Zou, Z.Q., Li, W.C., Liang, J.M., Wang, D.: Self-organized growth of higher manganese silicide nanowires on Si(111), (110) and (001) surfaces. Acta Mater. 59, 7473–7479 (2011)

75.

Bennett, P.A., He, Z., Smith, D.J., Ross, F.M.: Endotaxial silicide nanowires: a review. Thin Solid Films 519, 8434–8440 (2011)

76.

He, Z., Stevens, M., Smith, D.J., Bennett, P.A.: Epitaxial titanium silicide islands and nanowires. Surf. Sci. 524, 148–156 (2003)

77.

Stevens, M., He, Z., Smith, D.J., Bennett, P.A.: Structure and orientation of epitaxial titanium silicide nanowires determined by electron microdiffraction. J. Appl. Phys. 93, 5670–5674 (2003)

78.

He, Z., Smith, D.J., Bennett, P.A.: Endotaxial silicide nanowires. Phys. Rev. Lett. 93, 256102 (2004)

79.

Bennett, P.A., Ashcroft, B., He, Z., Tromp, R.M.: Growth dynamics of titanium silicide nanowires observed with low-energy electron microscopy, in AVS, Albuquerque, New Mexico, USA, pp. 2500–2504 (2002)

80.

Chen, S.Y., Chen, L.J.: Nitride-mediated epitaxy of self-assembled NiSi\(_{2}\) nanowires on (001)Si. Appl. Phys. Lett. 87, 253111–253113 (2005)

81.

Chen, S.Y., Chen, H.C., Chen, L.J.: Self-assembled endotaxial alpha-FeSi\(_{2}\) nanowires with length tunability mediated by a thin nitride layer on (001)Si. Appl. Phys. Lett. 88, 193114–193113 (2006)

82.

Chen, S.Y., Chen, L.J.: Self-assembled epitaxial NiSi\(_{2}\) nanowires on Si(001) by reactive deposition epitaxy. Thin Solid Films 508, 222–225 (2006)

83.

Liang, S., Islam, R., Smith, D.J., Bennett, P.A.: Phase transformation in FeSi2 nanowires. J. Cryst. Growth 295, 166–171 (2006)

84.

Peng, Z.L., Liang, S., Deng, L.G.: Transition metal silicide nanowires growth and electrical characterization. Chin. Phys. Lett. 26, 127301 (2009)

85.

Ma, J., Gu, Y., Shi, L., Chen, L., Yang, Z., Qian, Y.: Synthesis and oxidation behavior of chromium silicide (Cr\(_{3}\)Si) nanorods. J. Alloy. Compd. 375, 249–252 (2004)

86.

Kim, J., Anderson, W.A.: Spontaneous nickel monosilicide nanowire formation by metal induced growth. Thin Solid Films 483, 60–65 (2005)

87.

Kim, J., Anderson, W.A., Song, Y.J., Kim, G.B.: Self-assembled nanobridge formation and spontaneous growth of metal-induced nanowires. Appl. Phys. Lett. 86, 253101–253103 (2005)

88.

Tanaka, M., Chu, F., Shimojo, M., Takeguchi, M., Mitsuishi, K., Furuya, K.: Position- and size-controlled fabrication of iron silicide nanorods by electron-beam-induced deposition using an ultrahigh-vacuum transmission electron microscope. Appl. Phys. Lett. 86, 183104–183103 (2005)

89.

Zhang, Z., Hellström, P.-E., Lu, J., Östling, M., Zhang, S.-L.: A novel self-aligned process for platinum silicide nanowires. Microelectron. Eng. 83, 2107–2111 (2006)

90.

Geng, Z.R., Lu, Q.H., Yan, P.X., Yan, D., Yue, G.H.: Efficient preparation of NiSi nanowires by DC arc-discharge. Phys. E 41, 185–188 (2008)

91.

Gao, Y., Shao, G., Chen, R.S., Chong, Y.T., Li, Q.: TEM study of self-assembled FeSi\(_{2}\) nanostructures by ion beam implantation. Solid State Commun. 149, 97–100 (2009)

92.

He, Y., Fan, J., Zhao, Y.: Engineering a well-aligned composition-graded CuSi nanorod array by an oblique angle codeposition technique. Crystal Growth Des. 10, 4954–4958 (2010)

93.

He, Y., Brown, C., Lundgren, C.A., Zhao, Y.: The growth of CuSi composite nanorod arrays by oblique angle co-deposition, and their structural, electrical and optical properties. Nanotechnology 23, 365703 (2012)

94.

Seo, K., Bagkar, N., Kim, S.-i., In, J., Yoon, H., Jo, Y., Kim, B.: Diffusion-driven crystal structure transformation: synthesis of heusler alloy Fe3Si nanowires. Nano Lett. 10, 3643–3647 (2010)

95.

Jung, S.J., Lutz, T., Bell, A.P., McCarthy, E.K., Boland, J.J.: Free-standing, single-crystal Cu\(_{3}\)Si nanowires. Crystal Growth Des. 12, 3076–3081 (2012)

96.

Eberhardt, J., Kasper, E.: Ni/Ag metallization for SiGe HBTs using a Ni silicide contact. Semicond. Sci. Technol. 16, L47 (2001)

97.

Kim, J., Shin, D.H., Lee, E.S., Han, C.S., Park, Y.C.: Electrical characteristics of single and doubly connected Ni silicide nanowire grown by plasma-enhanced chemical vapor deposition. Appl. Phys. Lett. 90, 253103–253103 (2007)

98.

Paschen, S., Felder, E., Chernikov, M.A., Degiorgi, L., Schwer, H., Ott, H.R., Young, D.P., Sarrao, J.L., Fisk, Z.: Low-temperature transport, thermodynamic, and optical properties of FeSi. Phys. Rev. B 56, 12916–12930 (1997)

99.

Aeppli, G., DiTusa, J.F.: Undoped and doped FeSi or how to make a heavy fermion metal with three of the most common elements. Mater. Sci. Eng. B 63, 119–124 (1999)

100.

Hung, S.W., Yeh, P.H., Chu, L.W., Chen, C.D., Chou, L.J., Wu, Y.J., Chen, L.J.: Direct growth of \(\beta \)-FeSi\(_{2}\) nanowires with infrared emission, ferromagnetism at room temperature and high magnetoresistance via a spontaneous chemical reaction method. J. Mater. Chem. 21, 5704–5709 (2011)

101.

Kang, S., Brewer, G., Sapkota, K.R., Pegg, I.L., Philip, J.: Electrical and magnetic properties of higher manganese silicide nanostructures. IEEE Trans. Nanotechnol. 11, 437–440 (2012)

102.

Kim, J.J., Shindo, D., Murakami, Y., Xia, W., Chou, L.J., Chueh, Y.L.: Direct observation of field emission in a single TaSi\(_{2}\) nanowire. Nano Lett. 7, 2243–2247 (2007)

103.

Kim, J., Lee, E.S., Han, C.S., Kang, Y., Kim, D., Anderson, W.A.: Observation of Ni silicide formations and field emission properties of Ni silicide nanowires. Microelectron. Eng. 85, 1709–1712 (2008)

104.

Liang, S., Islam, R., Smith, D.J., Bennett, P.A., O’Brien, J.R., Taylor, B.: Magnetic iron silicide nanowires on Si(110). Appl. Phys. Lett. 88, 113111–113113 (2006)

105.

Kim, T., Bird, J.P.: Electrical signatures of ferromagnetism in epitaxial FeSi[sub 2] nanowires. Appl. Phys. Lett. 97, 263111–263113 (2010)

106.

Gottlieb, U., Sulpice, A., Lambert-Andron, B., Laborde, O.: Magnetic properties of single crystalline Mn\(_{4}\)Si\(_{7}\). J. Alloy. Compd. 361, 13–18 (2003)

107.

Hou, T.C., Han, Y.H., Lo, S.C., Lee, C.T., Ouyang, H., Chen, L.J.: Room-temperature ferromagnetism in CrSi\(_{2}\)(core)/SiO\(_{2}\)(shell) semiconducting nanocables. Appl. Phys. Lett. 98, 193104–193103 (2011)

108.

DeGrave, J.P., Schmitt, A.L., Selinsky, R.S., Higgins, J.M., Keavney, D.J., Jin, S.: spin polarization measurement of homogeneously doped Fe\(_{1-x}\)Co\(_{x}\)Si nanowires by andreev reflection spectroscopy. Nano Lett. 11, 4431–4437 (2011)

109.

Zhou, F., Szczech, J., Pettes, M.T., Moore, A.L., Jin, S., Shi, L.: Determination of transport properties in chromium disilicide nanowires via combined thermoelectric and structural characterizations. Nano Lett. 7, 1649–1654 (2007)

110.

Zou, C., Jing, G., Yu, D., Xue, Y., Duan, H.: Mechanical properties of TiSi\(_{2}\) nanowires. Phys. Lett. A 373, 2065–2070 (2009)

111.

Weber, W.M., Geelhaar, L., Graham, A.P., Unger, E., Duesberg, G.S., Liebau, M., Pamler, W., Chèze, C., Riechert, H., Lugli, P., Kreupl, F.: Silicon-nanowire transistors with intruded nickel-silicide contacts. Nano Lett. 6, 2660–2666 (2006)

112.

Wang, W., Ari, A.M., Wong, W.K.: Ieee, On-chip interconnects and repeaters based on NiSi nanowires. Ieee, New York (2006)

113.

Maex, K., De Keersmaecker, R.F., Ghosh, G., Delaey, L., Probst, V.: Degradation of doped Si regions contacted with transition-metal silicides due to metal-dopant compound formation. J. Appl. Phys. 66, 5327–5334 (1989)

114.

Hua, Q., Du, N., Zhang, H., Liu, Z., Wang, L., Yang, D.: Direct growth of Ni\(_{2}\)Si nanowire array electrodes for high-performance reversible lithium-ion batteries. J. Mater. Sci. Eng. 28, 645 (2010)

115.

Zhou, S., Wang, D.: Unique lithiation and delithiation processes of nanostructured metal silicides. ACS Nano 4, 7014–7020 (2010)

116.

Zhou, S., Simpson, Z.I., Yang, X., Wang, D.: Layered titanium disilicide stabilized by oxide coating for highly reversible lithium insertion and extraction. ACS Nano 6, 8114–8119 (2012)

117.

Kang, K., Song, K., Heo, H., Yoo, S., Kim, G.-S., Lee, G., Kang, Y.-M., Jo, M.-H.: Kinetics-driven high power Li-ion battery with a-Si/NiSi\(_{x}\) core-shell nanowire anodes. Chem. Sci. 2, 1090–1093 (2011)

118.

Qi, Y., Du, N., Zhang, H., Fan, X., Yang, Y., Yang, D.: CoO/NiSi\(_{x}\) core-shell nanowire arrays as lithium-ion anodes with high rate capabilities. Nanoscale 4, 991–996 (2012)

119.

Xie, J., Yang, X., Zhou, S., Wang, D.: Comparing one- and two-dimensional heteronanostructures as silicon-based lithium ion battery anode materials. ACS Nano 5, 9225–9231 (2011)

120.

Zhou, S., Yang, X., Lin, Y., Xie, J., Wang, D.: A nanonet-enabled Li ion battery cathode material with high power rate, high capacity, and long cycle lifetime. ACS Nano 6, 919–924 (2011)

121.

Lin, Y., Zhou, S., Liu, X., Sheehan, S., Wang, D.: TiO\(_{2}\)/TiSi\(_{2}\) heterostructures for high-efficiency photoelectrochemical H\(_{2}\)O splitting. J. Am. Chem. Soc. 131, 2772–2773 (2009)

122.

Banerjee, S., Mohapatra, S.K., Misra, M.: Water photooxidation by TiSi\(_{2}\)-TiO\(_{2}\) nanotubes. J. Phys. Chem. C 115, 12643–12649 (2011)

123.

Hung, S.W., Wang, T.T.J., Chu, L.W., Chen, L.J.: Orientation-dependent room-temperature ferromagnetism of FeSi nanowires and applications in nonvolatile memory devices. J. Phys. Chem. C 115, 15592–15597 (2011)

124.

Kim, D.J., Seol, J.K., Lee, M.R., Hyung, J.H., Kim, G.S., Ohgai, T., Lee, S.K.: Ferromagnetic nickel silicide nanowires for isolating primary CD4\(^{+}\) T lymphocytes. Appl. Phys. Lett. 100, 163703–163704 (2012)

Titel: Synthesis, Properties, and Applications of One-Dimensional Transition Metal Silicide Nanostructures
verfasst von: Guangwei She
Hailong Liu
Lixuan Mu
Wensheng Shi
Verlag: Springer New York
Buch: Silicon-based Nanomaterials
Print ISBN: 978-1-4614-8168-3

Electronic ISBN: 978-1-4614-8169-0

Copyright-Jahr: 2013
DOI: https://doi.org/10.1007/978-1-4614-8169-0_12

Premium Partner

Marktübersichten

Die im Laufe eines Jahres in der „adhäsion“ veröffentlichten Marktübersichten helfen Anwendern verschiedenster Branchen, sich einen gezielten Überblick über Lieferantenangebote zu verschaffen.

Zur Marktübersicht