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Journal of Nanoparticle Research
Erschienen in: Journal of Nanoparticle Research 7/2022

01.07.2022 | Research paper

Synthetic 2D tellurium nanosheets with intense TE wave polarization absorption by employing the PVD method

verfasst von: Junjie Yuan, Guowei Liu, Yi Xin, Xinyu Wang, Yiping Liu, Xue Han, Shenggui Fu, Zhongsheng Man, Fei Xing, Fang Zhang

Erschienen in: Journal of Nanoparticle Research | Ausgabe 7/2022

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Abstract

Tellurium (Te), as one of the chalcogens, is an emerging single-element non-layered p-type semiconductor material. Two-dimensional (2D) Te has shown great application potential in environmental stability, piezoelectric effect, high carrier mobility, and other fields. However, 2D Te is much less known compared to other traditional 2D materials. Herein, 2D Te nanosheets with the thickness of 20–40 nm and 10–20 nm growing under different temperatures and pressure were manufactured successfully by the physical vapor deposition (PVD) method. And the polarization-dependent optical absorption through the polarization-dependent coupling structure (Te/Mica sandwich structure) on a quartz prism was investigated. The results show that the 2D Te nanosheets have intense absorption of TE waves in the visible band. This work provides an experimental basis for the preparation of 2D Te in the future and points the way for its application in optical polarization devices.
Vorheriger Artikel Temperature-induced different deformation mechanisms for compressive behavior of nanotwinned Cu: molecular dynamics simulation
Nächster Artikel Adsorption of meso-tetra(3-pyridyl)porphyrin on InP/ZnS colloidal quantum dots

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Metadaten
Titel
Synthetic 2D tellurium nanosheets with intense TE wave polarization absorption by employing the PVD method
verfasst von
Junjie Yuan
Guowei Liu
Yi Xin
Xinyu Wang
Yiping Liu
Xue Han
Shenggui Fu
Zhongsheng Man
Fei Xing
Fang Zhang
Publikationsdatum
01.07.2022
Verlag
Springer Netherlands
Erschienen in
Journal of Nanoparticle Research / Ausgabe 7/2022
Print ISSN: 1388-0764
Elektronische ISSN: 1572-896X
DOI
https://doi.org/10.1007/s11051-022-05512-5

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