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Tailoring spintronic—optoelectronic functionality in MnSO4 doped ZnTe nanocomposites via lattice strain, defect engineering, and room temperature magnetic ordering

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  • 01.12.2025
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Abstract

Der Artikel befasst sich mit der Synthese und Charakterisierung von MnSO4 dotierten ZnTe-Nanocomposites und konzentriert sich dabei auf ihre einzigartigen spintronischen und optoelektronischen Eigenschaften. Schlüsselthemen sind der Syntheseprozess, morphologische Analysen, Photolumineszenzeigenschaften und die magnetische Charakterisierung. Die Studie zeigt, dass MnSO4-Doping lokalisierte magnetische Momente hervorruft und den optoelektronischen Nutzen von ZnTe erhöht. Die Nanokomposite weisen Ferromagnetismus bei Raumtemperatur und abstimmbare Photolumineszenz auf, was sie vielversprechend für Anwendungen in der Spintronik, Magnetooptik und Optoelektronik macht. Die detaillierte Analyse der morphologischen und magnetischen Eigenschaften liefert wertvolle Erkenntnisse über das Potenzial dieser Materialien für fortschrittliche technologische Anwendungen.

Supplementary Information

The online version contains supplementary material available at https://doi.org/10.1007/s10854-025-16264-y.

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Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

1 Introduction

MnSO4, an inorganic compound containing manganese sulfate, is predominantly used for the synthesis of materials and as a source of manganese for industrial purposes, such as fertilizers and animal feed. Using zinc telluride (ZnTe) as a substrate for doping is one of the most effective ways to maximize its significance [1]. It is a direct bandgap II-VI semiconductor with excellent optoelectronic properties, which make it a promising material for applications such as green LEDs and radiation detectors [2]. The introduction of localized magnetic moments in ZnTe through doping with MnSO4 derived Mn2+ ions, as well as its electronic structure, leads to the formation of a diluted magnetic semiconductor (DMS). In MnSO4 doped ZnTe, this synergy is easily visible, Mn2+ is incorporated into the semiconducting properties of ZnTe while retaining the magnetic properties [3]. By integrating carrier-mediated ferromagnetism into this system, practical spintronic devices can be operated at room temperature, and significant magneto-optical effects are induced (e.g., giant Zeeman splitting, Faraday rotation), extending its application range [4].
MnSO4 doped ZnTe’s DMS properties are the main driving force behind its applications. This material is particularly useful in spintronics, where it can be utilized in spin-polarized current injectors, spin filters, and non-volatile magnetic memory elements (MRAM), which can operate at high speeds and use electron spin degrees of freedom at low power levels [5]. Magnetic field sensors as well as optical isolators and modulators operate in the visible spectrum to exploit its magneto-optical properties. Additionally, the doping enhances its optoelectronic utility, since Mn2+ intra-d-shell transitions can yield specific luminescence bands, which could be used to produce tunable light sources [6]. In spintronics and magneto-optics, MnSO4 doping provides the magnetic moments required to function, the Mn2+ ions (which substitute for Zn2+ sites) provide these moments, whereas the interaction between them and their hosts’ charge carriers (holes in p-type MnSO4:ZnTe) is the basis of carrier-mediated ferromagnetism and magneto transport [7]. In current research, ferromagnetism at room temperature is being achieved, defects, carriers, and magnetic ions are understood and controlled, and DMS materials like MnSO4:ZnTe are being incorporated into functional nanoscale devices that are compatible with existing semiconductor technologies, leading to quantum and spin-based computing architectures that can be implemented.
It is crucial to understand the morphological patterns of MnSO4 doped ZnTe and conduct detailed magnetic studies to maximize its application potential. Depending on synthesis parameters, nanoparticles, thin films, and nanowires can have precisely controlled morphology [8]. By modifying surface-to-volume (s/v) ratios, nanostructuring can enhance surface emission and perturb optical bandgaps, and it can influence strain and defect profiles, which play a key role in magnetic coupling. An SEM, TEM, and AFM analysis at high resolution reveals grain size, distribution, phase purity, and interface quality—factors that influence device yield and reliability, as well as homogeneity and carrier mobility [9]. It is also important to perform comprehensive magnetic characterization (SQUID, VSM, EPR, magneto-transport, magneto-optics). In addition to saturation magnetization, coercivity, Curie temperature (Tc), and magnetic ordering (ferromagnetic, paramagnetic, superparamagnetic), it quantifies key parameters [10]. A key result of these studies is the understanding of magnetism’s origin and mechanism—carrier versus defect—mediated. The influence of dopant concentration, distribution homogeneity, and defect complexes on Mn2+ ions and Mn2+ ions and carriers/holes. By comparing morphology with magnetic properties, it is possible to design MnSO4:ZnTe structures specifically tailored to specific applications, such as magneto-optical sensors requiring uniform films with strong Faraday rotation or spintronic memory elements requiring high Tc and well-defined magnetic anisotropy achievable through controlled nanostructuring [11]. In this sense, advanced morphological and magnetic analysis is not simply diagnostic, but fundamental to realizing the full technological potential of this multifunctional semiconductor.

2 Experimental procedure

2.1 MnSO4doped ZnTe nanocomposites

MnSO4 doped ZnTe nanocomposites were synthesized using high-purity (99.99%) reagents obtained from E-Merck. A mixture containing 0.2 mol% manganese(II) sulfate (MnSO4), 0.2 mol% zinc telluride (ZnTe), and 6.0 mL of polyethylene glycol (PEG-400, used as a surfactant and growth modifier) was prepared in a glass flask, resulting in a semi-transparent blackish solution. This mixture was subjected to thermal treatment at 190 °C for 9 h. Within 10 min of heating, a visible color transition to bluish dark brown occurred, indicating the formation of MnSO4 doped ZnTe nanoparticles. After completion of the reaction, the solution was allowed to cool naturally, leading to nanocomposite precipitation. The precipitate, characterized by a greenish black, was collected via centrifugation and thoroughly washed with ethanol to remove residuals.

2.2 Sample characterization

X-ray diffraction (XRD) patterns were recorded using a Rigaku D/max-RB diffractometer with Ni-filtered CuKα radiation (λ = 1.5406 Å), operated at 40 kV and 30 mA over a 2θ range of 10° to 90°. Raman spectra, both resonant and non-resonant, were obtained using a Renishaw RM 2000 spectrometer with 632.8 nm and 325 nm laser sources. Surface morphology was assessed using a field emission scanning electron microscope (FESEM, Philips CM12) operated at 20 kV. High-resolution transmission electron microscopy (HRTEM) was conducted using a HITACHI H-8100 instrument at 200 kV, where samples were prepared by dropping an ultrafine dispersion onto carbon-coated copper grids and drying at ambient conditions. Selected area electron diffraction (SAED) patterns were recorded in conjunction with HRTEM. Photoluminescence properties were evaluated using a Fluorolog fluorescence lifetime spectrometer to analyze UV-induced luminescent behavior.

2.3 Vibrating sample magnetometer (VSM)

The magnetic behavior of MnSO4 doped ZnTe nanocomposites was examined using a vibrating sample magnetometer (VSM). Samples were secured in inverted gel caps and positioned centrally between oppositely wound pickup coils. The measurement setup involved a vibration frequency of 10 Hz, an amplitude of 1.5 mm, and an applied magnetic field strength of 1 T. Hysteresis loops were recorded across a field range from −3 T to + 3 T at cryogenic (4 K) and ambient (300 K) temperatures. Additionally, zero-field cooling (ZFC) protocols were employed using a 1 T applied field to investigate magnetic transitions post-magnetization.

3 Results and discussion

3.1 XRD analysis of Mn doped ZnTe

MnSO4 doped ZnTe can be characterized and analyzed by X-ray diffraction (XRD) and crystallographic modeling, which provide a comprehensive overview of phase composition, crystal quality, and lattice strain. In Fig. 1a, you can see the XRD pattern of pure MnSO4, which is indexed to the standard JCPDS file 65–3413. There is evidence of a well-defined monoclinic structure in MnSO4 from the observed diffraction peaks, which correspond to planes (200), (100), (002), and (211). By comparing these peaks to their ZnTe inheritance, it’s possible to determine how the structure of ZnTe changes over time. A crystallographic model of MnSO4 is shown in Fig. 1b, emphasizing coordination geometry between Mn2+ (purple), S6+ (yellow), and O2⁻ (red). Among the lattice structures, there is an intricate and stable network formed by MnSO6 octahedra and SO4 tetrahedra (e.g., sulfate removed as byproduct during thermal synthesis) detailed details were provided in the supplementary information (SI). The absence of sulfate-related peaks in the XRD and Raman spectra confirms that SO42⁻ is not incorporated in the final lattice. Instead, it is eliminated during the thermal process and washing, leaving Mn2⁺ substitutionally incorporated into ZnTe. Interestingly, PEG-400, used as a growth modifier, is removed after synthesis as evidenced by the absence of PEG-specific vibrational signatures, indicating it does not form a permanent coating on the particles. An XRD pattern showing MnSO4 doped ZnTe is displayed in Fig. 1c, aligned with JCPDS file no. 15–0746. When MnSO4 is incorporated, significant structural changes are observed in the diffraction pattern. An asterisk denotes the cubic phase of pure ZnTe, which is obvious from its characteristic reflections. The appearance of additional peaks in the diffraction pattern (211), (002), (103), (202), and (205) indicates MnSO4 has been successfully incorporated into the host lattice. MnSO4 may have reacted with ZnTe matrix to produce doped or composite phases with modified crystallographic symmetry, as suggested by these newly emerging peaks. Further, the apparent peak shifts and intensity variations may also be associated with local distortions, and the formation of intermediate phases may be caused by differences in ionic radii between Mn2+ and Zn2+. A combination of sharper and more intense peaks within ZnTe and reflections from the MnSO4 matrix, which coexist with ZnTe, suggests that MnSO4 is actually integrated within ZnTe rather than merely forming a physical mixture.
Fig. 1
a XRD pattern of MnSO4 confirming its crystalline monoclinic phase; b Crystal structure of MnSO4 showing Mn2⁺ (purple), S⁶⁺ (yellow), and O2⁻ (red) ions in a coordinated lattice; c XRD pattern of MnSO4 doped ZnTe peaks (*) and additional reflections confirm successful MnSO4 incorporation; d Williamson—Hall plot for doped ZnTe showing lattice strain and crystallite size contribution via linear fitting (Color figure online)
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This figure illustrates a strain and crystallite size analysis through the Williamson—Hall (W–H) method, which plots βcosθ as a function of 4sinθ. Based on the linear fit of the experimental data (red squares), we can see that doped material exhibits significant lattice strain, microstrain-induced broadening is signified by the positive slope, while crystallite size is represented by the inverse intercept. As shown by the high coefficient of determination (R2 = 0.97935 and adjusted R2 = 0.96831), the linear fitting supports the assertion that the peak broadening is not solely caused by crystallite size but also by the strain caused by the MnSO4. The linear model’s robustness is further demonstrated by its residual sum of squares (2.867) and low standard errors. ZnTe’s crystal structure and microstructure are substantially altered by MnSO4 doping, according to the structural analysis. It implies a strong interfacial interaction and substitutional incorporation associated with MnSO4 inducing lattice distortion, altering peak positions, and enhancing crystalline order. In advanced optoelectronic or spintronic applications, where fine control over crystallinity and defects is crucial, this novel MnSO4 doped ZnTe system exhibits promising potential, as it displays a tailored microstructure and induces strain effects [12].

3.2 Raman spectroscopic analysis of Mn doped ZnTe

In Fig. 2a, we present the Raman spectrum of MnSO4 doped ZnTe which demonstrates a significant alteration in the structure of zinc telluride caused by manganese incorporation. By deconvoluting the spectrum, distinct MnSO4 doping characteristics can be observed alongside ZnTe’s characteristic vibrational modes. Asymmetric phonon modes dominate ZnTe’s spectrum, including the fundamental transverse optical (TO) and longitudinal optical (LO). It is evident that the TO phonon, which is usually observed near 177 cm−1 in undoped ZnTe, has shifted down to a lower wavenumber, probably in the 170—175 cm−1 range, which indicating a reduction in lattice effective force constants. Due to the mass difference between Mn2+ ions substituting for Zn2+ ions and Sn2+ ions that have been replaced by Mn2+ ions, as well as local strain fields and weakened bonds, this softening occurs. In addition to the shift and asymmetric broadening to the low frequency side, the LO phonon is also observed near 210 cm−1. There is clear evidence that this characteristic asymmetry has been triggered by an interaction between discrete LO phonons and a continuum of electronic states introduced by the MnSO4 doping, possibly including acceptor levels or impurities [13]. In addition to this, the marked broadening of both TO and LO peaks implies an increase in phonon damping due to increased scattering and local structural disorder within the lattice from Mn ions [14].
Fig. 2
Raman spectrum of MnSO4 doped ZnTe; a Sample identifier. b Deconvoluted spectrum showing intensity—Deconvolution detail: Experimental data, baseline, fitted peaks—magnified regions highlighting specific modes
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There are prominent new vibrational modes present in the spectrum that do not appear in ZnTe in its pristine form. It appears in the range associated with Te-related vibrations or disorder-activated modes between 120 and 140 cm−1. As the vibrations show a significant intensity and a possible slight shift relative to tellurium precipitation modes, they might be the product of Mn-induced local vibrational modes (LVM’s) or disorder-activated acoustic phonons. A distinct and relatively sharp peak is also present near 250 cm−1. Based on the alignment of this position with the characteristic MnTe-like LO phonon mode, Mn substitution onto Zn sites is highly likely to lead to the formation of Mn-Te vibrational units within the crystal lattice. In addition to the presence of a broad feature around 300 cm−1, a second order scattering process, such as a 2TO(L) or TO + TA phonon combination, may also alter the intensity profile due to doping effects. According to Fig. 2b, those intrinsic spectral components have been effectively isolated and fit to a cumulative peak, confirming that the response consists of multiple peaks. This spectroscopic signature of successful Mn incorporation into the ZnTe lattice is complemented by the observation of phonon softening, asymmetric broadenings, Fano line shapes of the LO mode, and new Mn-related and disorder-activated peaks [15]. Moreover, it alters fundamental vibrational properties essential for tailoring the material’s electronic and optoelectronic properties, causing substantial local structural distortions, modifying charge distributions, and altering fundamental vibrational properties.

3.3 SEM morphological analysis of pure manganese sulfate (MnSO4) crystals

Based on scanning electron microscopy analysis of pure manganese sulfate crystals, Fig. 3a–i illustrates distinctive morphological characteristics. There are clearly defined geometric habits characterized by irregular polyhedral aggregates and prismatic structures, indicating that MnSO4’s crystal system is orthorhombic. The primary particles demonstrate significant size dispersion, ranging from sub-micron platelets to euhedral crystallites surpassing 10 mm in size, with the magnification scale bar confirming nanoscale surfaces. An anisotropic crystallization kinetics may have occurred during the synthesis of intergrown tabular crystal assemblies showing sharp interfacial angles of approximately 60°—80°. The topology analysis of manganese sulfate hydrate reveals terraced microstructures with distinct step edges and cleavage planes. This is consistent with a layered, ionic lattice structure. It is significant to note that higher-magnification fields demonstrate nanotextured surfaces with dendritic growth fronts and localized dislocation patterns, indicating non-classical crystallization pathways, as shown in Fig. 3(b, c & f). As a result of high sample purity and the absence of amorphous phases or secondary precipitates, micrometer-scale fractures along crystallographic planes confirm the inherent brittleness of the material. As particles accumulate face-to-face, mesoscale architectures with internally porous pore structures develop. Crystal facets exhibit substantial variation in surface roughness parameters, with some planes showing atomically smooth terraces and others displaying dissolution pits and growth striations. Heterogeneity likely arises from differences in surface energies between crystallographic orientations, which are mediated by solvents in the crystallization process.
Fig. 3
Scanning electron micrographs of pure MnSO4 crystals: (a,b,d,e,g,h,i) Polyhedral aggregates and prismatic euhedrons (crystals with distinct shapes) exhibiting orthorhombic symmetry. Note nano-textured surfaces (g–i), layered growth patterns, nano-scale cleavage planes, and face-stacked meso-architectures. Uniform crystallinity confirms phase purity
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In this study, microstructure suggests a diffusion-controlled crystallization mechanism, where rapid initial nucleation results in nanocrystalline building blocks that are subsequently oriented to form hierarchical architectures. Lattice matching between adjacent crystals consistently shows 76°-78° interfacial angles between adjacent crystals. It might be possible that minor morphological deviations in peripheral regions, as shown in Fig. 3d and e, are the result of localized variations in the state of hydration or a layer of surface hydration. As a result of these structural characteristics, a variety of studies investigating modifies manganese sulfates can be conducted, including catalytic, energy storage, and functional material applications whose reactivity is governed by surface topology and crystal faceting.

3.4 Surface morphology and microstructural features of MnSO4doped ZnTe

MnSO4 doped ZnTe samples were examined by scanning electron microscopy (SEM) micrographs in Fig. 4, showing their morphological characteristics at different magnifications, providing valuable insights into the grain structure, morphology, and aggregation behaviors. In Fig. 4a through e, particles are tightly packed into clusters with irregular surfaces and flake-like topologies, indicating polycrystalline architecture. Observed in Fig. 4b and d, these images exhibit layers and distortions that may be due to Mn2+ substitution occurring within the ZnTe lattice at Zn2+ sites. A surface turned uneven, and the surface-to-volume (s/v) ratio increased as a result of this ionic substitution, which is highly desirable in catalytic and optoelectronic applications. This could induce localized strain and anisotropic growth during synthesis, leading to an uneven surface with an enhanced surface-to-volume ratio. It is important to note that these micrographs show agglomerated formations which are likely to be associated with strong interparticle interactions, probably owing to van-der-Waals forces or residual synthesis byproducts acting as binders. Additionally, Fig. 4e, captured at lower magnification, illustrates how the particles are assembled into a sponge-like porous network, which could play a significant role in charge transport and ion diffusion in electronics and energy storage. By observing the distinct concentric diffraction rings punctuated by bright spots in Fig. 4f, the SAED pattern further confirms the polycrystalline nature of the sample. It is possible that a partial ordered nanocrystalline framework is implied by these traits, suggesting the existence of multiple crystalline domains with preferential orientations. It appears that despite the morphological irregularities, the crystallographic rings are well-defined and sharp. The results of the SEM investigation indicate that MnSO4 doping significantly changes meso- and microstructural attributes of ZnTe in addition to its effect on the atomic structure of the material. Rugged, coarse particles with high surface roughness as well as agglomerated assemblies suggest altered nucleation and growth kinetics of the particles during synthesis—which could be related to Mn2+ incorporation, which may play a structure-directing role [1618]. With these dual effects on crystallinity and morphology, the electronic band structure modulation, defect-induced carrier transport, and surface reactivity of MnSO4 doped ZnTe will be significantly improved, leading to more efficient optoelectronics, catalytic, and energy applications. A combination of morphological data and diffraction evidence allows us to understand how MnSO4 based doping dynamically alters ZnTe semiconductor physicochemical properties. In spite of this, comparing the pure ZnTe morphology pattern could be more useful for understanding the current phenomenon. We examined the surface morphology of MnSO4 doped ZnTe samples using SEM, as shown in Fig. 4(a–e). Microstructures with irregular shapes and a rough surface texture can be seen in the images which consist of densely packed grains with irregular shapes. Particles are estimated to have a size distribution ranging from 200 to 800 nm, with an average grain size of 500 nm, suggesting moderate grain coalescence during growth. There is a significant influence of MnSO4 on the nucleation and crystallization processes, resulting in heterogeneous grain growth due to the rough surface and nonuniform edges. As opposed to this, the morphology of pure ZnTe has been well documented. According to Minegishi et al. (APL Mater. 8, 041101 (2020), ZnTe films prepared by a single-step cross-sectional deposition consist of grains between 100 and 1000 nm. Whereas films deposited in two steps exhibit grains of 500—1000 nm and have a stepped surface structure reflecting crystal habit [19]. Based on our results, MnSO4 doped ZnTe is somewhat smaller and rougher than previously reported materials, suggesting that Mn incorporation alters surface energy and restricts grain coarsening.
Fig. 4
a-e SEM micrographs of MnSO4 doped ZnTe at various magnifications showing agglomerated, irregularly shaped particles with rough, flake-like surfaces, indicative of polycrystalline morphology. f SAED pattern confirming the polycrystalline nature with distinct diffraction rings
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3.5 TEM images of MnSO4doped ZnTe granular particles

The average particle size of the MnSO4 doped ZnTe granular particles is about ~ 100 nm and they exhibit a spherical shape as shown in Fig. 5a–f. It is difficult to discern any difference between the spherical morphology and that after doping with zinc telluride precursors other than the appearance of a few tiny particles. While Figs. 5a and b depict metal oxides produced during synthesis, Figs. 5a–c show a roughened surface after PEG coating, confirming the construction of nanoshells. Figure 5d, e displays mesoporous silica hollow spheres that are embedded in zinc telluride nanoparticles of about ~ 40—90 nm and exhibit yolk-shell architecture. A yolk-shell nanostructure demonstrated excellent thermal stability even when calcined at temperatures above 900 °C. Upon calcining MnSO4 doped ZnTe granular particles directly, yolk-shell nanostructured materials formed severe aggregation as shown in Fig. 1a–c, indicating that, nanoshells play a significant role in their dispersibility and stability. Further, the TEM image revealed large and uniform particle sizes of MnSO4 loaded on the ZnTe support, which indicates severe aggregation of the particles. Due to this yolk-shell architecture, catalysts were designed with sintering properties. Further, the shell and core of the shell are uniformly filled with O. The outer shell contains Zn-Te, whereas the inner core contains MnSO4. This egg-shell architecture of MnSO4 doped ZnTe nanocomposites is in agreement with previous studies.
Fig. 5
a–f. TEM images of surface analysis of MnSO4 doped ZnTe granular particles revealed nanoshells architecture
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4 Photoluminescence analysis of MnSO4doped ZnTe

Based on the photoluminescence (PL) spectra provided in the accompanying figure, the optical emission characteristics of MnSO4 doped ZnTe nanostructures are clearly illustrated, emphasizing the effects of Mn2+ incorporation on the photophysical behavior of the host semiconductor. It is evident from Fig. 6a that MnSO4 doped ZnTe exhibits multiple PL emission peaks centered at 440 nm, 451 nm, 473 nm, 516 nm, and 536 nm under ultraviolet illumination. As a result of these emission bands, we can deduce that there are multiple pathways within the bandgap that are involved in defect mediated recombination. In Fig. 6b and the fitted spectrum in Fig. 6c, the primary peak at 440 nm can be attributed to excitonic recombination that is influenced by nearby dopant concentrations. In addition, emissions at longer wavelengths 451 nm, 473 nm, 516 nm, and 536 nm are attributed to defects or impurities introduced by Mn2+ doping, possibly zinc vacancies, tellurium interstitials, or Mn-related localized states. Collectively, these features indicate complex defect chemistry and substantial lattice perturbations introduced by the incorporation of Mn. The Gaussian deconvolution in Fig. 6c also confirms this interpretation because it provides an enhanced spectral resolution of overlapping peaks. As shown in Fig. 6c, the strongest emission observed at 440 nm aligns with the dominant feature in Fig. 6b, confirming PL behaviour’s consistency and reproducibility. Due to the enhanced PL intensity and the broadened emission characteristics, the Mn2+ ions are acting as luminescent centers and might facilitate a high radiative recombination rate. Due to the relaxation of spin and parity selection rules in the tetrahedral crystal field of ZnTe, internal π-π transitions of Mn2+ ions are possible. This phenomenon is explained by internal π-π transitions of Mn2+ ions. A PL imaging of MnSO4 nanoparticles alone is shown in Fig. 6a, with emissions measured at 466 nm, 447 nm, 468 nm, and 488 nm, respectively. A majority of these emissions are a result of intrinsic electronic transitions in the Mn2+ centers of the host matrix MnSO4. As can be seen in Fig. 6b and c, Mn2+ ions retain their luminescent behavior after doping into ZnTe, while interacting with the host lattice modulates their emission landscape. It is evident from the spectral shifts and longer-wavelength emissions that Mn2+ has successfully integrated into the ZnTe lattice and created new defect-related energy levels. As a result, the PL data provide a compelling story about how MnSO4 doping significantly alters the optical emission properties of ZnTe, creating additional recombination centers and altering charge carrier dynamics. As a result of these findings, MnSO4 doped ZnTe has the potential to be a promising optoelectronic material, especially for the area of visible light emission, phosphor design, and defect-engineered semiconductors.
Fig. 6
a PL spectrum of MnSO4 nanoparticles showing characteristic emission peaks due to intrinsic Mn2⁺ transitions; b PL emission of MnSO4 doped ZnTe nanostructures exhibiting multiple peaks attributed to band-edge and defect-related transitions; c Gaussian deconvolution of the PL spectrum in b confirming dominant emission at 440 nm and the presence of Mn-induced defect states
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5 Magnetic Properties of MnSO4doped ZnTe nanostructures

In Fig. 7(a-d), magnetic measurements of MnSO4 doped ZnTe are illustrated, providing insights into magnetic interactions induced by Mn2+ incorporation into the ZnTe matrix based on temperature and field. A linear relationship between zero-field-cooled (ZFC) magnetization and temperature (2–300 K) is evident in Fig. 7a, in which magnetic moments increase pronouncedly at lower temperatures, followed by a gradual decay as the temperature approaches room temperature, suggesting that at elevated temperatures, spin disorder is thermally activated. Possibly, the sharp upturn below 50 K can be explained by localized Mn2+ magnetic moments, spin-glass-like behavior, or weak ferromagnetic exchange interactions caused by the substitutional incorporation of MnSO4 into the ZnTe lattice. Inverse susceptibility (1) versus temperature is presented in Fig. 7b, which exhibits a near-linear relationship in low temperatures, consistent with the Curie–Weiss law, suggesting dominant paramagnetic behavior with a possible transition or anomaly between 100 and 120 K. Mn ions may be distributed inhomogeneously at higher temperatures, resulting in competitive antiferromagnetic interactions or magnetic clustering effects. According to Fig. 7c and Fig. 7d, the magnetic state at 300 K and 4 K is further clarified by the field-dependent magnetization (M-H) curves. In Fig. 7c, the nearly linear and symmetric M-H response at room temperature is characterized by negligible coercivity and remanence, indicating a paramagnetic region dominated by isolated Mn2+ spins interacting weakly with the ZnTe host structure. As shown in Fig. 7d, the low-temperature M-H loop exhibits a steeper slope and a higher magnetic moment because thermal fluctuations are suppressed and localized spins are aligned more uniformly under the applied field. Despite the increased magnetic moment at cryogenic temperatures, the phenomenon is probably induced by MnSO4 induced exchange interactions that do not exhibit hysteresis at 4 K. These are shown in the figure insets. The loop openings in Figs. 7c and d, which indicate no robust ferromagnetism or coercivity in the low-field region, are magnified in Fig. 7c. As a consequence of these magnetization measurements, MnSO4 doping in ZnTe induces localized magnetic moments, leading to a paramagnetic ground state with possible short-range magnetic correlations. As a result of this observation, the magnetic properties of MnSO4 doped ZnTe systems are easily tuneable, which may be important in future spintronic applications where carrier-magnetic interactions are crucial. In an effort to develop magnetically functionalized II-VI semiconductor nanostructures, careful optimization of MnSO4 content and synthesis parameters could potentially result in stronger magnetic ordering.
Fig. 7
Magnetic characterization of MnSO4 doped ZnTe: a ZFC magnetization versus temperature (2—300 K), b inverse susceptibility (χ⁻1) versus temperature showing Curie–Weiss behavior, c field-dependent magnetization (M–H) at 300 K, and d M–H at 4 K. Insets in c and d highlight the low-field regions
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6 Conclusion

Using PEG-assisted thermal synthesis, this work presents MnSO4 doped ZnTe nanocomposites as diluted magnetic semiconductors (DMS’s) with room temperature ferromagnetism validated by VSM hysteresis at 300 K, tunable defects-mediated photoluminescence 440—536 nm emission, and lattice-strain modulated band structures was confirmed by Raman and XRD. The SO42⁻ moieties act as transient counter-ions during the synthesis and are completely removed post-synthesis, while PEG only functions as a growth modifier without forming a permanent surface coating on the final nanocomposites. Future advancements necessitate optimizing Mn2⁺ concentration gradients to enhance Curie temperature (Tc) and coercivity for spintronic applications MRAM, spin filters, coupled with defect engineering via positron annihilation spectroscopy to correlate zinc vacancies (VZn) with magnetic ordering and radiative recombination pathways. A further amplification of magneto-optical effects can be achieved by fabricating nanoscale heterostructures MnSO4 doped ZnTe/core–shell quantum dots using atomic layer deposition, while the development of high-efficiency spin-photonic integrated circuits requires the solution to problems related to dopant homogeneity using atom probe tomography and synchrotron X-ray absorption fine structure (XAFS).

Acknowledgements

In their acknowledgement, the author expresses their gratitude to management.

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This manuscript or a very similar manuscript has not been published, nor is under consideration by any other journal. All authors have seen and approved the final, submitted version of this manuscript. The authors declare no competing financial interest. There are no conflicts of interest to declare. All authors declare that there is no conflict of interest.

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Titel
Tailoring spintronic—optoelectronic functionality in MnSO4 doped ZnTe nanocomposites via lattice strain, defect engineering, and room temperature magnetic ordering
Verfasst von
Kasinathan Kaviyarasu
Lebogang Kotsedi
Publikationsdatum
01.12.2025
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 34/2025
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-025-16264-y

Supplementary Information

Below is the link to the electronic supplementary material.
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