Anzeige
Erschienen in:
2001 | OriginalPaper | Buchkapitel
TCAD Analysis of Gain Cell Retention Time for SRAM Applications
verfasst von : A. Gehring, C. Heitzinger, T. Grasser, S. Selberherr
Erschienen in: Simulation of Semiconductor Processes and Devices 2001
Verlag: Springer Vienna
Enthalten in: Professional Book Archive
Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
We present simulations of a recently published SRAM memory gain cell consisting of two transistors and one MOS capacitor, representing an alternative to conventional six transistor SRAMs. Inverse modeling is used to fit a given device characteristic to measurement data. To account for de-charging due to tunneling, we use a simple, non-local tunneling model and calibrate it with data from literature. By optimization, we find values for the contact voltages in the off-region at which the retention time is a maximum.