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2019 | OriginalPaper | Buchkapitel

4. Technological Characteristics of Laser and Laser Diode

verfasst von : Hiroshi Shimizu

Erschienen in: General Purpose Technology, Spin-Out, and Innovation

Verlag: Springer Singapore

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Abstract

This section reviews the basic technological characteristics of laser and laser diode. The purpose here is to help understand the case analysis of Part II. Therefore, the technological details are limited to a minimum as much as possible. However, there will still be a good portion of technical explanation of laser diode in this chapter. Hence, you may wish to treat this chapter as a dictionary by skimming through this chapter and come back if you do not understand something technological while reading the case analysis. First, this chapter describes the characteristics of a laser and its basic principles and then outlines the technological features of a laser diode. It then provides an examination of the application and market of laser diodes.

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Vorheriges Kapitel Data

Nächstes Kapitel Birth of the Laser Diode: It All Started in the U.S.

For the history of laser diode technology evolution, see the followings. Dupuis, R. D. (2004): “The Diode Laser: The First 30 Days, 40 Years Ago,” Optics & Photonics News, 27, 30–35, Holonyak, N. (1997): “The Semiconductor Laser: A Thrity-Five-Year Perspective,” Proceeding of the IEEE, 85, 1678–1693, Ito, R., and N. Chinone (2010): “Progress in Semiconductor Lasers,” Oyo Butsuri, 79, 496–501, Nakazawa, M. (2010): “Advances in Information Communication Technology Based on Lasers,” Oyo Butsuri, 79, 508–516, Suematsu, Y. (2000): “Historical Progress of Semiconductor Lasers: As a Key Devices of Optoelectronics,” Journal of the Institute of Electronics, Information and Communication Engineers, 83, 28–31. For technical introduction of laser diodes, see Coldren, L. A., S. W. Corzine, and M. Mashanovitch (2012): Diode Lasers and Photonic Integrated Circuits. Hoboken, New Jersey: Wiley, Coleman, J. J., A. C. Bryce, and C. Jagadish (2012): Advances in Semiconductor Lasers. Amsterdam; Boston: Elsevier/Academic Press, Suematsu, Y., and K. Kobayashi (2007): Photonics: Optoelectronics and Its Progress (Fotonikusu: Hikari Electronikusu to Sono Shinten). Tokyo: Ohmusha.

For a technical introduction on the structure of laser diode, see Hirata, S. (2001): Laser Diode Basics and Application (Wakaru Handotai Reza no Kiso to Oyo). Tokyo: CQ Shuppan, Kanbe, H. (2001): Begineers’ Handbook of Semiconductor Laser Technology (Hajimete no Handotai Reza Gijutsu). Tokyo: Kogyo Chosakai.

Hirata, S. (2001): Laser Diode Basics and Application (Wakaru Handotai Reza no Kiso to Oyo). Tokyo: CQ Shuppan., pp. 114–130.

Applied Optoelectronics Handbook Editor Comittee (Oyo Hikair Erekutoronikusu Hando Bukku Henshu Iinkai) (1989): Applied Optoelectronics Handbook (Oyo Hikair Erekutoronikusu Hando Bukku). Tokyo: Shokodo., p. 105.

The relationship between the band gap energy (Eg) of the semiconductor material and the emission wavelength can be obtained by λ = 1240/Eg.

The lattice constant of AlGaAs is 5.6548 angstroms.

Ikegami, T. (1992): “Recent Innovation in Otoelectronics – Emphasis on Progress in Semicondutor Lasers,” Oyo Butsuri, 61, 318–321.

Nelson, H. (1963): “Epitaxial Growth from the Liquid State and Its Application to the Fabilication of Tunneland Laser Diodes,” RCA Review, 24, 603–615.

For the detail of MBE technology and development, see McCray, P. W. (2007): “MBE Deserves a Place in the History Books,” Nature Nanotechnology, 2, 259–261.

For the detail on MOCVD technology, refer to Mori, Y. (1982): “MOCVD Growth of GaAs and AlGaAs,” Oyo Butsuri, 51, 925–930.

Dupuis, R. D., and D. P. Dapkus (1977): “Room-Temperature Operation of Ga_(1-X)Al_xas/GaAs Double-Heterostructure Lasers Grown by Metalorganic Chemical Vapor Deposition,” Applied Physics Letters, 31, 466–468.

Yariv, A., and P. Yeh (2007): Photonics: Optical Electronics in Modern Communications. New York: Oxford University Press., p. 673.

Nannichi, Y. (1977): “Laser Diode Epilogue (Handotai Reza Epirogu),” Electronics (Erekutoronikusu), 22, 840.

For example, similar figures are also drawn in Suematsu, Y., and K. Kobayashi (2007): Photonics: Optoelectronics and Its Progress (Fotonikusu: Hikari Electronikusu to Sono Shinten). Tokyo: Ohmusha., p4.

For the sake of clarity, this book converts 100 yen to 1 U.S. dollar.

Japan Society for the Promotion of Science Optoelectronics No130 Committee (2011): Optoelectronics and Its Application (Hikari Elekutoronikusu to Sono Oyo). Tokyo: Ohmusha.

Ikegami, T., and K. Matsukura (2000): Optoelectronics and Its Industry (Hikari Electronics to Sangyo). Tokyo: Kyoritsu Shuppan., p. III.

Agency of Industrial Science and Technology Affairs Department Technology Research Group (Kogyo Gijyutsuinn Somubu Gijyutsu Chosaka) (1982): “International Comparison on Industrial Technology in Japan: Quantative Evalutation in 43 Product Categories (Wagakuni Sangyogijyutsu no Kokusai Hikaku: Shuyo 43 Seihinbunya no Teiryo Hyoka),” Tokyo: Tsusho Sangyo Chosakai., p. 408.

The government research group pointed out that the Japanese technological development capability for laser diode is comparable to that of overseas (the U.S.), and its international competitiveness and technological level have greatly surpassed that of overseas products. — (1983): “Characteristics of Industrial Technology in Japan and Its Challenge (Wagakuni Sangyo Gijyutsu no Taishitsu to Kadai: Sozoteki Jishugijyutsu Kaihatsu),” Tokyo: Tsusho Sangyo Chosakai.

If a journal/book does not provide a title in English, the title is translated into English and the original title in Japanese is in the bracket.

Dupuis, R. D., & Dapkus, D. P. (1977). Room-temperature operation of Ga_(1-X)Al_xas/GaAs double-heterostructure lasers grown by metalorganic chemical vapor deposition. Applied Physics Letters, 31, 466–468.CrossRef

Titel: Technological Characteristics of Laser and Laser Diode
verfasst von: Hiroshi Shimizu
Verlag: Springer Singapore
Buch: General Purpose Technology, Spin-Out, and Innovation
Print ISBN: 978-981-13-3713-0

Electronic ISBN: 978-981-13-3714-7

Copyright-Jahr: 2019
DOI: https://doi.org/10.1007/978-981-13-3714-7_4