Anzeige
Erschienen in:
2014 | OriginalPaper | Buchkapitel
Temperature Dependence Junction Parameters: Schottky Barrier, Flatband Barrier, and Temperature Coefficients of Schottky Diode
verfasst von : J. M. Dhimmar, B. P. Modi
Erschienen in: Physics of Semiconductor Devices
Verlag: Springer International Publishing
Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
The variation in electrical characteristics In-pSi Schottky diode have been systematically investigated as a function of temperature by using forward bias current–voltage measurement. The main diode parameters, ideality factor and zero bias barrier height (Ф
bo
) were found strongly temperature dependent. The zero bias barrier increases and the ideality factor decreases with increasing temperature while the flat band barrier (Ф
bf
) values increase with decreasing temperature. The temperature coefficient of the barrier height is found to be around −0.7 meV/
o
K, very closed agreement with platinum silicide contact on p-silicon and can be suitably understood on Tersoff’s model.