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Erschienen in:
GaN Substrate Material for III–V Semiconductor Epitaxy Growth Kapitel lesen Erstes Kapitel lesen

2019 | OriginalPaper | Buchkapitel

5. The AlGaInP/AlGaAs Material System and Red/Yellow LED

verfasst von : Guohong Wang, Xiaoyan Yi, Teng Zhan, Yang Huang

Erschienen in: Light-Emitting Diodes

Verlag: Springer International Publishing

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Abstract

In this chapter, AlGaInP and AlGaAs alloy compound semiconductor system was reviewed for solid-state lighting application, including their lattice and bandgap structure, heterojunction, and quantum well properties. LEDs based on AlGaInP quantum well and GaAs substrate operating in the red, orange, and yellow visible spectrum were discussed including the major classes of AlGaInP device structures, such as GaP-absorbing substrate LEDs enhanced by distributed Bragg reflectors (DBRs), transparent-substrate LEDs (TS-LEDs), thin-film LEDs (TF-LEDs), and GaP window/current-spreading layer. AlGaInP/AlGaAs material MOCVD epitaxy and LED chip processing technology were introduced briefly.

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Vorheriges Kapitel GaN LEDs on Si Substrate
Nächstes Kapitel The InGaN Material System and Blue/Green Emitters
Literatur
1.
F.M. Steranka, AlGaAs red light-emitting diodes, in High Brightness Light Emitting Diodes, Semiconductors and Semimetals, vol. 48, (Academic, Cambridge, 1997)
2.
H.C. Casey Jr., M.B. Panish, Heterostructure Lasers, Part A and Heterostructure Lasers, Part B (Academic, Cambridge, 1978)
3.
C.H. Chen, S.A. Stockman, M.J. Peanasky, C.P. Kuo, OMVPE growth of AlGaInP for high efficiency visible light-emitting diodes, in High Brightness Light Emitting Diodes, Semiconductors and Semimetals, vol. 48, (Academic, Cambridge, 1997)
4.
L. Vegard, Die konstitution der mischkristalle und die raumfüllung der atome. Z. Phys. 5(1), 17–26 (1921)CrossRef
5.
A.R. Denton, N.W. Ashcroft, Vegard’s law. Phys. Rev. A At. Mol. Opt. Phys. 43(6), 3161–3164 (1991)CrossRef
6.
F.A. Kish, R.M. Fletcher, AlGaInP light-emitting diodes, in High Brightness Light Emitting Diodes, Semiconductors and Semimetals, vol. 48, (Academic, Cambridge, 1997)
7.
X.H. Zhang, S.J. Chua, W.J. Fan, Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs. Appl. Phys. Lett. 73(8), 1098–1100 (1998)CrossRef
8.
K. Kobayashi, Room-temperature CW operation of AlGaInP double-heterostructure visible lasers. Electron. Lett. 21, 931–932 (1985)CrossRef
9.
C.P. Kuo, R.M. Fletcher, T.D. Osentowski, M.C. Lardizabel, M.G. Craford, V.M. Robbins, Appl. Phys. Lett. 57, 2937 (1990)CrossRef
10.
H. Sugawara, M. Ishikawa, G. Hatakoshi, Appl. Phys. Lett. 58, 1010 (1991)CrossRef
11.
M. Shigekazu, K. Masahiko, Characterization of OMVPE—grown A1GaInP by optical spectroscopy. SPIE Modulation Spectroscopy 1286, 74–84 (1990)CrossRef
12.
R.M. Fletcher, C.P. Kuo, T.D. Osentowski, V.M. Robbins, US Patent No. 5,008,718 (1991)
13.
H. Sugawara, M. Ishikawa, Y. Kokubun, Y. Nishikawa, S. Naritsuka, US Patent No. 5,048,035 (1991)
14.
S. Illek, U. Jacob, A. Ploessl, P. Strauss, K. Streubel, W. Wegleiter, R. Wirth, Compound Semicond. 8, 39 (2002)
15.
T. Kato, H. Susawa, M. Hirotani, T. Saka, Y. Ohashi, E. Shichi, S. Shibata, J. Cryst. Growth 107, 832 (1991)CrossRef
16.
C.H.E.N. Yi-Xin, S.H.E.N. Guang-Di, et al., Efficiency-enhanced AlGaInP light-emitting diodes with thin window layers and coupled distributed bragg reflectors. Chin. Phys. Lett. 28(6), 067806 (2011)CrossRef
17.
H.J. Lee, Y.J. Kim, S.U. Kim, et al., Efficiency improvement of 630 nm AlGaInP light-emitting diodes based on AlGaAs bottom window. Jpn. J. Appl. Phys. 52, 102101 (2013)CrossRef
18.
19.
N. Linder, S. Kugler, P. Strauss, R. Wirth, H. Zull, K.P. Streubel, High-brightness AlGaInP light emitting diodes using surface texturing. Proc. SPIE 4278, 19–25 (2001)CrossRef
20.
Y.J. Lee, H.C. Kuo, S.C. Wang, T.C. Hsu, M.H. Hsieh, M.J. Jou, B.J. Lee, Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening. IEEE Photon. Technol. Lett. 17(11), 2289–2291 (2005)CrossRef
21.
22.
G.E. Hoefler, D. Vanderwater, D.C. DeFevere, F.A. Kish, M. Camras, F. Steranka, I.-H. Tan, Appl. Phys. Lett. 69, 803 (1996)CrossRef
23.
I. Schnitzer, E. Yablonovitch, C. Caneau, T.J. Gmitter, Appl. Phys. Lett. 62, 131 (1993)CrossRef
24.
N.F. Gardner, H.C. Chui, E.I. Chen, M.R. Krames, J.-W. Huang, F.A. Kish, S.A. Stockman, C.P. Kocot, T.S. Tan, N. Moll, Appl. Phys. Lett. 74, 2230 (1999)CrossRef
25.
M.R. Krames, M. Ochiai-Holcomb, G.E. Höfler, et al., High-power truncated-inverted-pyramid (AlχGa1−χ)0.5In0.5P light-emitting diodes exhibiting >50% external quantum efficiency. Appl. Phys. Lett. 75(16), 2365–2367 (1999)CrossRef
26.
Z. Jian-Ming, Z. De-Shu, X. Chen, et al., AlGaInP thin-film LED with omni-directionally reflector and ITO transparent conducting n-type contact. Chin. Phys. Soc. 16(11), 3498 (2007)CrossRef
27.
K. Bergenek et al., Enhanced light extraction efficiency from AlGaInP thin-film light-emitting diodes with photonic crystals. Appl. Phys. Lett. 93, 041105 (2008)CrossRef
28.
W. Fan-Lei, O. Sin-Liang, Y.-C. Kao, et al., Thin-film vertical-type AlGaInP LEDs fabricated by epitaxial lift-off process via the patterned design of Cu substrate. Opt. Express 23(14), 18156–18165 (2015)CrossRef
29.
M.-C. Tseng, C.-L. Chen, N.-K. Lai, et al., P-side-up thin-film AlGaInP-based light emitting diodes with direct ohmic contact of an ITO layer with a GaP window layer. Opt. Express 22(S7), A1862–A1867 (2014)CrossRef
30.
Y.C. Lee, H.C. Kuo, C.E. Lee, T.C. Lu, S.C. Wang, IEEE Photon. Technol. Lett. 20, 23 (2008)
31.
A. Žukauskas, R. Vaicekauskas, F. Ivanauskas, R. Gaska, M.S. Shur, Optimization of white polychromatic semiconductor lamps. Appl. Phys. Lett. 80, 234–236 (2002)CrossRef
32.
Y. Ohno, Spectral design considerations for white LED color rendering. Opt. Eng. 44, 111302 (2005)CrossRef
33.
K.A. Bulashevich, A.V. Kulik, S.Y. Karpov, Optimal ways of colour mixing for high quality white light LED sources. Phys. Status Solidi A 212, 914–919 (2015)CrossRef
34.
J.M. Phillips, M.E. Coltrin, M.H. Crawford, A.J. Fischer, M.R. Krames, R. Mueller-Mach, G.O. Mueller, Y. Ohno, L.E.S. Rohwer, J.A. Simmons, J.Y. Tsao, Research challenges to ultra-efficient inorganic solid-state lighting. Laser Photonics Rev. 1, 307–333 (2007)CrossRef
35.
J.Y. Tsao, M.E. Coltrin, M.H. Crawford, J.A. Simmons, Solid-state lighting: an integrated human factors, technology and economic perspective. Proc. IEEE 98, 1162–1179 (2009)CrossRef
36.
37.
Y. Ohno, in Color rendering and luminous efficacy of white LED spectra. Calculations based on white light simulator (2004)
38.
DOE SSL Program, in Suggested Research Topics Supplement: Technology and Market Context, ed. by J. Brodrick (2017)
39.
T. Gessmann, E.F. Schubert, High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications. J. Appl. Phys. 95, 2203–2216 (2004)CrossRef
40.
G. Chen et al., Performance of high-power III-nitride light emitting diodes. Phys. Status Solidi A 205, 1086–1092 (2008)CrossRef
41.
J. Day et al., III-nitride full-scale high-resolution microdisplays. Appl. Phys. Lett. 99, 031116 (2011)CrossRef
42.
C.-M. Kang, S.-J. Kang, S.-H. Mun, et al., Monolithic integration of AlGaInP-based red and InGaN-based green LEDs via adhesive bonding for multicolor emission. Sci. Rep. 7(1), 10333 (2017)CrossRef
43.
D. Karunatilaka, F. Zafar, V. Kalavally, R. Parthiban, LED based indoor visible light communications: state of the art. IEEE Commun. Surv. Tutorials 17(3), 1649–1678 (2015)CrossRef
44.
Y. Tanaka, T. Komine, S. Haruyama, M. Nakagawa, Indoor visible light data transmission system utilizing white LED lights. IEICE Trans. Commun. 86(8), 2440–2454 (2003)
45.
J. Vucic, C. Kottke, K. Habel, K.D. Langer, in Proc. OFC/NFOEC, Los Angeles, CA, USA. 803 mbit/s visible light WDM link based on DMT modulation of a single RGB LED luminary (2011), pp. 1–3
46.
O.H. Hwa Sub, J.O.O. Jee Hue, L.E.E. Jin Hong, et al., Structural optimization of high-power AlGaInP resonant cavity light-emitting diodes for visible light communications. Jpn. J. Appl. Phys. 47(8), 6214 (2008)CrossRef
47.
C. Xinlian, K. Fanmin, k. Li, et al., Study of light extraction efficiency of flip-chip GaN based LEDs with different periodic arrays [J]. Opt. Commun. 314, 90–96 (2014)CrossRef
48.
S. Shinji, H. Rei, H. Jongil, et al., InGaN light emitting diodes on c-face sapphire substrates in green gap spectral range [J]. Appl. Phys. Express 6(11), 111004 (2013)CrossRef
49.
O. Jeong Rok, C. Sang-Hwan, O. Ji Hye, et al., The realization of a whole palette of colors in a green gap by monochromatic phosphor-converted light-emitting diodes [J]. Opt. Express 19(5), 4188–4198 (2011)CrossRef
50.
J. Davies Matthew, D. Philip, C.-P. Massabuau Fabien, et al., The effects of varying threading dislocation density on the optical properties of InGaN/GaN quantum wells [J]. Phys. Status Solidi C 11, 750–753 (2014)CrossRef
51.
J.L. Zhang, F.Y. Jiang, J.L. Liu, et al., Study on Epitaxial Growth and Device Characterization of GaN Based Yellow Light-Emitting Diodes on Si Substrate (Nanchang University, Nanchang, 2014), pp. 3–11
52.
53.
C.H. Wang, C.C. Ke, C.Y. Lee, et al., Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer [J]. Appl. Phys. Lett. 97(26), 261103 (2010)CrossRef
54.
G. Wei, Z. Fan, M. Morteza, et al., Auger recombination in III-nitride nanowires and its effect on nanowire light-emitting diode characteristics [J]. Nano Lett. 11(4), 1434–1438 (2011)CrossRef
55.
C.H. Wang, J.R. Chen, C.H. Chiu, et al., Temperature-dependent electroluminescence efficiency in blue InGaN-GaN light-emitting diodes with different well widths [J]. IEEE Photon. Technol. Lett. 22(4), 236–238 (2010)CrossRef
56.
J.L. Zhang, F.Y. Jiang, J.L. Liu, et al., Study on Epitaxial Growth and Device Characterization of GaN Based Yellow Light-Emitting Diodes on Si Substrate (Nanchang University, Nanchang, 2014), p. 15
57.
J.R. Chen, Y.C. Wu, S.C. Ling, et al., Investigation of wavelength dependent efficiency droop in InGaN light emitting diodes [J]. Appl. Phys. B 98(4), 779–789 (2010)CrossRef
58.
S. Dong-Soo, H. Dong-Pyo, O. Ji-Yeon, et al., Study of droop phenomena in InGaN-based blue and green light-emitting diodes by temperature-dependent electroluminescence [J]. Appl. Phys. Lett. 100(15), 153506 (2012)CrossRef
59.
N. Shuji, S. Masayuki, I. Naruhito, et al., High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures [J]. Jpn. J. Appl. Phys. 34(Part 2, 7A), L797 (1995)
60.
F. Mitsuru, U. Masaya, K. Yoichi, et al., Blue, green and amber InGaN/GaN light-emitting diodes on semi polar {11-22} GaN bulk substrates [J]. Jpn. J. Appl. Phys. 45(26), L659 (2006)CrossRef
61.
S. Hitoshi, B. Chung Roy, H. Hirohiko, et al., Optical properties of yellow light-emitting diodes grown on semi polar (11-22) bulk GaN substrates [J]. Appl. Phys. Lett. 92(22), 221110–221113 (2008)CrossRef
62.
Y. Shuichiro, Z. Yuji, P. Chih-Chien, et al., High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semi polar (20-21) GaN substrates [J]. Appl. Phys. Express 3(12), 122102 (2010)CrossRef
63.
P. Il-Kyu, K. Min-Ki, B. Sung-Ho, et al., Enhancement of phase separation in the InGaN layer for self-assembled in-rich quantum dots [J]. Appl. Phys. Lett. 87(6), 061906 (2005)CrossRef
64.
C.B. Soh, W. Liu, H. Hartono, et al., Enhanced optical performance of amber emitting quantum dots incorporated InGaN/GaN light-emitting diodes with growth on UV-enhanced electrochemically etched nanoporous GaN [J]. Appl. Phys. Lett. 98(19), 191906 (2011)CrossRef
65.
L. Wenbin, W. Lai, W. Jiaxing, et al., InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers [J]. Nanoscale Res. Lett. 7(1), 1–8 (2012)CrossRef
66.
S.L. Delage, D. Christian, Wide band gap semiconductor reliability: status and trends [J]. Microelectron. Reliab. 43(9–11), 1705–1712 (2003)CrossRef
67.
K. Ryosuke, K. Toshiyuki, S. Atushi, et al., Realization of extreme light extraction efficiency for moth-eye LEDs on SiC substrate using high-reflection electrode [J]. Phys. Status Solidi C 7(7–8), 2180–2182 (2010)
68.
P. Chen, R. Zhang, Z.M. Zhao, et al., Growth of high quality GaN layers with AlN buffer on Si (111) substrates [J]. J. Cryst. Growth 225(2), 150–154 (2001)CrossRef
69.
L. Junlin, z. Jianli, M. Qinghua, et al., Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate [J]. CrystEngComm 15(17), 3372–3376 (2013)CrossRef
70.
J.L. Zhang, F.Y. Jiang, J.L. Liu, et al., Study on Epitaxial Growth and Device Characterization of GaN Based Yellow Light-Emitting Diodes on Si Substrate (Nanchang University, Nanchang, 2014), p. 16
Metadaten
Titel
The AlGaInP/AlGaAs Material System and Red/Yellow LED
verfasst von
Guohong Wang
Xiaoyan Yi
Teng Zhan
Yang Huang
Copyright-Jahr
2019
Verlag
Springer International Publishing
Buch
Light-Emitting Diodes

Print ISBN: 978-3-319-99210-5

Electronic ISBN: 978-3-319-99211-2

Copyright-Jahr: 2019

DOI
https://doi.org/10.1007/978-3-319-99211-2_5

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