Skip to main content

2017 | OriginalPaper | Buchkapitel

The Correlation Between Device Aging and System Degradation

verfasst von : Song Lan, Cher Ming Tan

Erschienen in: Theory and Practice of Quality and Reliability Engineering in Asia Industry

Verlag: Springer Singapore

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

An electronic system contains millions of components on a single chip today, and the failure of any of these components may lead to the system failure. Conventionally, the system reliability is ensured by having a high reliable subsystem or component, and thus efforts are placed to study the reliability of individual components in electronic system. However, the failure mechanisms of a system is lot more complex, and the correlation between the system failure and component failure is not straight forward, depending on the system configuration, as demonstrated in this work. Therefore, electronic system reliability may not be derived from its components’ reliability.

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 102.000 Bücher
  • über 537 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe




 

Jetzt Wissensvorsprung sichern!

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 67.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Literatur
Zurück zum Zitat P. D. T. O’Connor, D. Newton, and R. Bromley, Practical Reliability Engineering, Chichester: John Wiley & Sons Ltd, 2002. P. D. T. O’Connor, D. Newton, and R. Bromley, Practical Reliability Engineering, Chichester: John Wiley & Sons Ltd, 2002.
Zurück zum Zitat L. Song, and T. Cher Ming, “Reliability Evaluation and Improvement for High Power LED Driver”, Presented in ICMAT 2013. L. Song, and T. Cher Ming, “Reliability Evaluation and Improvement for High Power LED Driver”, Presented in ICMAT 2013.
Zurück zum Zitat H. Chenming, C. T. Simon, H. Fu-Chieh et al., “Hot-Electron-Induced MOSFET Degradation - Model, Monitor, and Improvement,” Solid-State Circuits, IEEE Journal of, vol. 20, no. 1, pp. 295–305, 1985. H. Chenming, C. T. Simon, H. Fu-Chieh et al., “Hot-Electron-Induced MOSFET Degradation - Model, Monitor, and Improvement,” Solid-State Circuits, IEEE Journal of, vol. 20, no. 1, pp. 295–305, 1985.
Zurück zum Zitat J. E. Chung, P.-K. Ko, and C. Hu, “A model for hot-electron-induced MOSFET linear-current degradation based on mobility reduction due to interface-state generation,” IEEE Transactions on Electron Devices, vol. 38, no. 6, pp. 1362–1370, 1991. J. E. Chung, P.-K. Ko, and C. Hu, “A model for hot-electron-induced MOSFET linear-current degradation based on mobility reduction due to interface-state generation,” IEEE Transactions on Electron Devices, vol. 38, no. 6, pp. 1362–1370, 1991.
Zurück zum Zitat M. Rausand, and A. Høyland, System reliability theory: models, statistical methods, and applications/ Marvin Rausand, Arnljot Høyland: Hoboken, NJ: Wiley-Interscience, c2004. 2nd ed., 2004. M. Rausand, and A. Høyland, System reliability theory: models, statistical methods, and applications/ Marvin Rausand, Arnljot Høyland: Hoboken, NJ: Wiley-Interscience, c2004. 2nd ed., 2004.
Zurück zum Zitat S. Lan, C. M. Tan, and K. Wu, “Methodology of reliability enhancement for high power LED driver,” Microelectronics Reliability, vol. 54, no. 6–7, pp. 1150–9, 2014. S. Lan, C. M. Tan, and K. Wu, “Methodology of reliability enhancement for high power LED driver,” Microelectronics Reliability, vol. 54, no. 6–7, pp. 1150–9, 2014.
Zurück zum Zitat S. Lan, C. M. Tan, and K. Wu, “Reliability study of LED driver – A case study of black box testing,” Microelectronics Reliability, vol. 52, no. 9–10, pp. 1940–4, 2012. S. Lan, C. M. Tan, and K. Wu, “Reliability study of LED driver – A case study of black box testing,” Microelectronics Reliability, vol. 52, no. 9–10, pp. 1940–4, 2012.
Zurück zum Zitat D. S. Ang, and C. H. Ling, “On the time-dependent degradation of LDD n-MOSFETs under hot-carrier stress,” Microelectronics Reliability, vol. 39, no. 9, pp. 1311–1322, 1999. D. S. Ang, and C. H. Ling, “On the time-dependent degradation of LDD n-MOSFETs under hot-carrier stress,” Microelectronics Reliability, vol. 39, no. 9, pp. 1311–1322, 1999.
Zurück zum Zitat K. M. Cham, J. Hui, P. Vande Voorde et al., “SELF-LIMITING BEHAVIOR OF HOT CARRIER DEGRADATION AND ITS IMPLICATION ON THE VALIDITY OF LIFETIME EXTRACTION BY ACCELERATED STRESS,” Annual Proceedings - Reliability Physics (Symposium). pp. 191–194, 1987. K. M. Cham, J. Hui, P. Vande Voorde et al., “SELF-LIMITING BEHAVIOR OF HOT CARRIER DEGRADATION AND ITS IMPLICATION ON THE VALIDITY OF LIFETIME EXTRACTION BY ACCELERATED STRESS,” Annual Proceedings - Reliability Physics (Symposium). pp. 191–194, 1987.
Zurück zum Zitat D. S. Ang, and C. H. Ling, “Unified model for the self-limiting hot-carrier degradation in LDD n-MOSFET’s,” IEEE Transactions on Electron Devices, vol. 45, no. 1, pp. 149–159, 1998. D. S. Ang, and C. H. Ling, “Unified model for the self-limiting hot-carrier degradation in LDD n-MOSFET’s,” IEEE Transactions on Electron Devices, vol. 45, no. 1, pp. 149–159, 1998.
Metadaten
Titel
The Correlation Between Device Aging and System Degradation
verfasst von
Song Lan
Cher Ming Tan
Copyright-Jahr
2017
Verlag
Springer Singapore
DOI
https://doi.org/10.1007/978-981-10-3290-5_22

Neuer Inhalt