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Journal of Materials Science
Erschienen in: Journal of Materials Science 18/2014

01.09.2014

The effect of fast annealing treatment on the interface structure and electrical properties of Au/Hg3In2Te6 contact

verfasst von: Jie Sun, Li Fu, S. P. Ringer, Yapeng Li, Zongwen Liu

Erschienen in: Journal of Materials Science | Ausgabe 18/2014

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Abstract

The effect of fast annealing treatment on the electrical properties and interface structures of Au/Hg3In2Te6 contact has been studied by means of current–voltage test and high-resolution transmission electron microscopy. The current–voltage characteristics of Au/Hg3In2Te6 indicate an improvement of the Schottky barrier height (SBH) from 0.557 to 0.601 eV after proper annealing treatment. Meanwhile, the orthorhombic AuTe2 particles with irregular morphology formed near the interface region after 200 °C annealing treatment. These particles were generated by chemical reaction between Au and Te atoms rather than the phase transformation process. Two types of crystallographic orientation relationship were confirmed between AuTe2 particles and the Hg3In2Te6 matrix owing to the orientation attachment mechanism. Based on the results, it is believed that the formation of the AuTe2 phase is likely to introduce additional energy level in Hg3In2Te6, leading to the upward of band bending and increment of SBH.
Vorheriger Artikel Review: the characterization of electrospun nanofibrous liquid filtration membranes
Nächster Artikel Discontinuous reactions in melt-spun Cu–10 at. %Co alloys and their effect on magnetic anisotropy

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Literatur
1.
Zhang X, Sun W, Lu Z et al (2007) Near-infrared photodetectors based on mercury indium telluride single crystals. Photonics Asia 6835:68350A
2.
Gorley P, Grushka Z, Radevych Y, Grushka O, Zabolotsky I (2007) Hg3In2Te6: a promising material for optoelectronic devices. Photonics North 2007:67961W
3.
Grushka ZM, Gorley PN, Grushka OG, Horley PP, Radevych YI, Zhuo Z (2006) Mercury indium telluride-a new promising material for photonic structures and devices, ICO20: Materials and Nanostructures: 60291A
4.
Malik AI, Vieira M, Fernandes M, Macarico F, Grushka ZM (1999) Near-infrared photodetectors based on a HgInTe-semiconductor compound, Optoelectronics’ 99-Integrated Optoelectronic Devices: 433–442
5.
Zhang X, Sun W, Zhang L, Lu Z (2008) Temperature-dependent characteristics of Pt Schottky contacts on n-type HgInTe. Semicond Sci Technol 23:105005CrossRef
6.
Kosyachenko L, Rarenko I, Sklyarchuk E, German I, Weiguo S (2006) Electrical characteristics of the ITO/HgInTe photodiodes. Semiconductors 40:554–557CrossRef
7.
Kosyachenko L, Kabanova I, Sklyarchuk V, Sklyarchuk O, Rarenko I (2009) Hg3In2Te6-based photodiodes for fiber optic communication. Phys Status Solidi A 206:351–355CrossRef
8.
Li Q, Jie W, Fu L, Wang X, Zhang X (2006) Metal–CdZnTe contact and its annealing behaviors. Appl Surf Sci 253:1190–1193CrossRef
9.
Li Q, Jie W, Fu L, Zha G (2006) Investigation on interface barrier of Au–CdZnTe contacts. Nucl Instrum Methods Phys Res Sect A 564:544–548CrossRef
10.
Xiaoyan L, Jiahua M, Changjun W et al (2009) Optimized process of thermal treatment of Au/CdZnTe contacts. Rare Metal Mat Eng 38:2085–2088CrossRef
11.
Bai X, Jie W, Zha G et al (2010) Interface dipole and Schottky barrier formation at Au/CdZnTe (111)A interfaces. J Phys Chem C 114:16426–16429CrossRef
12.
Sun J, Fu L, Wang Y et al (2013) Study of Au/Hg3In2Te6 interface by synchrotron radiation photoemission spectroscopy. J Appl Phys 114:083719CrossRef
13.
Rhoderick E, Williams R (1988) Metal-semiconductor contacts, 2nd edn. Clarendon Press, Ann Arbor
14.
Kittel C, McEuen P (1996) Introduction to solid state physics, 7th edn. Wiley, New York
15.
Karataş Ş (2010) Effect of series resistance on the electrical characteristics and interface state energy distributions of Sn/p-Si (MS) Schottky diodes. Microelectron Eng 87:1935–1940CrossRef
16.
Hossain A, Bolotnikov A, Camarda G, Cui Y, Yang G, James R (2008) Defects in cadmium zinc telluride crystals revealed by etch-pit distributions. J Cryst Growth 310:4493–4498CrossRef
17.
Wang L, Jie W, Yang Y, Xu G, Fu L (2008) Etch pits observation and in distribution in mercury indium telluride single crystals. Semicond Sci Technol 23:055015CrossRef
18.
Spencer P, Ray B (1968) Phase diagram of the alloy system Hg3Te3–In2Te3. J Phys D 1:299–301CrossRef
19.
Sun J, Fu L, Liu H, Li Y, Ringer S, Liu Z (2014) On the morphology and crystallography of Hg5In2Te8 precipitation in Hg3In2Te6. J Alloys Compd 601:298–306CrossRef
20.
Sun J, Fu L, Nie Z, Shi Y, Li Y (2013) The effect of chemical polishing on the interface structure and electrical property of Au/Cd0.9Zn0.1Te contact. Appl Phys A 115:1309–1316
21.
Xiaoqin W, Wanqi J, Qiang L, Zhi G (2005) Surface passivation of CdZnTe wafers. Mater Sci Semicond Process 8:615–621CrossRef
22.
Davis G, Beck W, Kelly M, Tache N, Margaritondo G (1986) Deposition of the unreactive metal Au onto sputtered and cleaved Hg1−x Cd x Te surfaces. J Appl Phys 60:3157–3161CrossRef
23.
Van Tendeloo G, Amelinckx S, Gregoriades P (1984) Electron microscopic studies of modulated structures in (Au, Ag) Te2: III. Krennerite. J Solid State Chem 53:281–289CrossRef
24.
Maynell C, Saunders G, Seddon T (1970) An order-disorder transformation in Hg3In2Te6. Phys Lett A 31:338–339CrossRef
25.
Liu H, Liu J (2011) SP2: a computer program for plotting stereographic projection and exploring crystallographic orientation relationships. J Appl Crystallogr 45:130–134CrossRef
26.
Liu H, Waclawik ER, Luo C (2010) A simplified invariant line analysis for face-centred cubic/body-centred cubic precipitation systems. J Appl Crystallogr 43:448–454CrossRef
27.
Zha G, Jie W, Tan T, Zhang W, Xu F (2007) The interface reaction and Schottky barrier between metals and CdZnTe. J Phys Chem C 111:12834–12838CrossRef
28.
Bilevych YO, Sukach A, Tetyorkin V (2004) Schottky barrier and ageing effect studies in Au (Cu)/p-CdTe contacts. Phys Status Solidi C 1:317–320CrossRef
29.
Stafeev V (2009) Structure and properties of Cd x Hg1−x Te-metal contacts. Semiconductors 43:608–611CrossRef
30.
Mills KC (1974) Thermodynamic data for inorganic sulphides, selenides and tellurides, 2nd edn. Butterworths, London
31.
Saunders G, Seddon T (1970) Effect of ordered vacancies on ultrasonic wave propagation in some mercury-indium tellurides. J Phys Chem Solids 31:2495–2504CrossRef
32.
Zhang Z, Yates JT Jr (2012) Band bending in semiconductors: chemical and physical consequences at surfaces and interfaces. Chem Rev 112:5520–5551CrossRef
33.
Caracas R, Gonze X (2001) Ab initio determination of the valence electron distribution in the average structure of the incommensurately modulated calaverite AuTe2. Acta Crystallogr Sect B 57:633–637CrossRef
34.
Van Triest A, Folkerts W, Haas C (1990) Electronic structure and photoelectron spectra of calaverite, AuTe2. J Phys 2:8733–8740
Metadaten
Titel
The effect of fast annealing treatment on the interface structure and electrical properties of Au/Hg3In2Te6 contact
verfasst von
Jie Sun
Li Fu
S. P. Ringer
Yapeng Li
Zongwen Liu
Publikationsdatum
01.09.2014
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 18/2014
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-014-8324-y

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