Anzeige
Erschienen in:
01.01.2014
The influence of oxygen pressure on the growth of CuO nanostructures prepared by RF reactive magnetron sputtering
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 1/2014
EinloggenAktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by
Abstract
Copper oxide films were prepared by RF reactive magnetron sputtering at different percentages of oxygen pressure in a Ar:O2 reactive gas mixture at room temperature. The structural and optical properties of CuO films were investigated by a field emission scanning electron microscope, Raman spectroscopy, X-ray diffraction and UV–Visible spectrophotometer. The structure of the deposited film changed from a mixture of Cu2O + CuO phases to a pure CuO phase with an increase in oxygen percentage. In addition the crystallite size increased from 12 to 24 nm as the oxygen pressure percentage increased. The optical transmittance significantly increased with the increase of the oxygen pressure percentage and the optical band gap of the film increased from 1.33 to 1.41 eV. The film prepared with 30 and 40 % oxygen pressure showed (002) crystallographic orientation. The I–V characteristic of p-CuO/n-Si heterojunction diode was also found to be dependent on the oxygen pressure percentage.