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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 12/2020

07.05.2020

The optimization of contact interface between metal/MoS2 FETs by oxygen plasma treatment

verfasst von: Yadong Zhang, Kunpeng Jia, Jiangtao Liu, Yu Pan, Kun Luo, Jiahan Yu, Yongkui Zhang, Hanmin Tian, Zhenhua Wu, Huaxiang Yin

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 12/2020

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Abstract

The quality of the contact is key for the performance enhancement of the MoS2 device. As the oxygen plasma treatment is developed in the fabrication of MoS2 field effect transistor (FET), we demonstrate that the tunneling layer (MoO3) is formed on the top of the MoS2 contact region and the process induced organic residues in the source and drain regions is effectively removed. The formation of MoO3 can degrade the Fermi level pinning effect at the MoS2/metal interface and lowering the Schottky barrier height. And the flatness of the interface has been greatly improved, with the roughness reduced from 0.53 to 0.166 nm. In this paper, we improve the device performance with an on-/off-current ratio increase by four orders of magnitude, a mobility increase by 10 times at room temperature and the 33-fold decrease in contact resistance. This research shows that oxygen plasma treatment is a promising method for the integration of MoS2 FET in the future.
Vorheriger Artikel Structural features and energy harvester device applications of textured 0.675 PMN–0.325 PT piezoceramics
Nächster Artikel Synthesis and structural of Cd0.5Zn0.5F2O4 nanoparticles and its influence on the structure and optical properties of polyvinyl alcohol films

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Metadaten
Titel
The optimization of contact interface between metal/MoS2 FETs by oxygen plasma treatment
verfasst von
Yadong Zhang
Kunpeng Jia
Jiangtao Liu
Yu Pan
Kun Luo
Jiahan Yu
Yongkui Zhang
Hanmin Tian
Zhenhua Wu
Huaxiang Yin
Publikationsdatum
07.05.2020
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 12/2020
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-03511-7

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