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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 8/2020

05.03.2020

The reliability assessment of Au–Al bonds using parallel gap resistance microwelding

verfasst von: Peng Liu, Sen Cong, Xingwen Tan, Xiang Lin, Ping Wu

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 8/2020

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Abstract

The Au–Al bonding joint was prepared by the parallel gap resistance microwelding. The microstructural evolution of Au–Al bonds was investigated under thermal aging, and the mechanical properties of Au–Al intermetallic compounds (IMCs) were computed by the first-principles calculations. We found that the Au–Al IMCs along with cracks grew during aging time and temperature increasing. The formation of the cracks is explained by the Kirkendall effect, volumetric shrinkages and thermal mismatch. Based on the experimental data, the growth of the IMCs is fitted to the diffusion equation to describe the performance degradation of Au–Al bonds. The Arrhenius relationship is introduced as the acceleration model to describe the effects of thermal stress on lifetime. Furthermore, the Weibull–Arrhenius model is built by the combination of the Weibull distribution and the Arrhenius relationship, which provide a method to estimate the lifetime distribution under work condition.
Vorheriger Artikel Enhanced luminescent performance with surface wrinkled Al-doped ZnO films
Nächster Artikel Temperature-dependent terahertz time-domain spectroscopy of 3D, 2D, and 0D semiconductor heterostructures

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Metadaten
Titel
The reliability assessment of Au–Al bonds using parallel gap resistance microwelding
verfasst von
Peng Liu
Sen Cong
Xingwen Tan
Xiang Lin
Ping Wu
Publikationsdatum
05.03.2020
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 8/2020
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-03187-z

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