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Erschienen in:

26.05.2023

Theoretical analysis of relative intensity noise in semiconductor QD lasers

verfasst von: Gholaam-Reza Babaabasi, Ali Mir, Mohammad-Hasan Yavari

Erschienen in: Journal of Computational Electronics | Ausgabe 4/2023

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Abstract

In this study, the relative intensity noise (RIN) and modulation response of a 1.3 μm InAs/InGaAs quantum dot (QD) laser are investigated using a rate equation model in the presence of Langevin noise sources and small-signal analysis. Results demonstrate that carrier noise in the ground state and excited states increases the amplitude of the RIN, and the RIN in QD lasers declines with an increase in injection current. Due to the decreased ambient temperature, the output power and modulation bandwidth increase, and the RIN decreases. According to the results, the maximum achievable modulation bandwidth and output power and the minimum RIN value could not be achieved at the same bias current. An optimal performance factor (OPF) can be introduced to achieve the best possible QD laser performance in terms of RIN, maximum modulation bandwidth, output power, and electrical current consumption. Despite the fact that the minimum available RIN is −150 dB/Hz and the maximum modulation bandwidth is 7.95 GHz at two different bias currents, the OPF results at the optimum point reveal a modulation bandwidth of 7.64 GHz and a minimum RIN of −140 dB/Hz with 26 mW output power at 36-mA bias current.

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Literatur
1.
Zurück zum Zitat Eliseev, P.G., et al.: Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers. IEEE J. Sel. Top. Quantum Electron. 7(2), 135–142 (2001)CrossRef Eliseev, P.G., et al.: Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers. IEEE J. Sel. Top. Quantum Electron. 7(2), 135–142 (2001)CrossRef
2.
Zurück zum Zitat Freisem, S., et al.: Very-low-threshold current density continuous-wave quantum-dot laser diode. Electron. Lett. 44(11), 679–681 (2008)CrossRef Freisem, S., et al.: Very-low-threshold current density continuous-wave quantum-dot laser diode. Electron. Lett. 44(11), 679–681 (2008)CrossRef
3.
Zurück zum Zitat Taleb, H., Moravvej-Farshi, M.K.: Designing a low-threshold quantum-dot laser based on a slow-light photonic crystal waveguide. Appl. Opt. 56(35), 9629–9637 (2017)CrossRef Taleb, H., Moravvej-Farshi, M.K.: Designing a low-threshold quantum-dot laser based on a slow-light photonic crystal waveguide. Appl. Opt. 56(35), 9629–9637 (2017)CrossRef
4.
Zurück zum Zitat Fathpour, S., Mi, Z., Bhattacharya, P.: Small-signal modulation characteristics of p-doped 1.1-and 1.3-μm quantum-dot lasers. IEEE Photon. Technol. Lett. 17(11), 2250–2252 (2005)CrossRef Fathpour, S., Mi, Z., Bhattacharya, P.: Small-signal modulation characteristics of p-doped 1.1-and 1.3-μm quantum-dot lasers. IEEE Photon. Technol. Lett. 17(11), 2250–2252 (2005)CrossRef
5.
Zurück zum Zitat Lüdge, K., et al.: Large-signal response of semiconductor quantum-dot lasers. IEEE J. Quantum Electron. 46(12), 1755–1762 (2010)CrossRef Lüdge, K., et al.: Large-signal response of semiconductor quantum-dot lasers. IEEE J. Quantum Electron. 46(12), 1755–1762 (2010)CrossRef
6.
Zurück zum Zitat Kovsh, A., et al.: 3.5 W CW operation of quantum dot laser. Electron. Lett. 35(14), 1161–1163 (1999)CrossRef Kovsh, A., et al.: 3.5 W CW operation of quantum dot laser. Electron. Lett. 35(14), 1161–1163 (1999)CrossRef
7.
Zurück zum Zitat Sumpf, B., et al.: High-power 980 nm quantum dot broad area lasers. Electron. Lett. 39(23), 1655 (2003)CrossRef Sumpf, B., et al.: High-power 980 nm quantum dot broad area lasers. Electron. Lett. 39(23), 1655 (2003)CrossRef
8.
Zurück zum Zitat Smowton, P.M., et al.: Temperature-dependent threshold current in InP quantum-dot lasers. IEEE J. Sel. Top. Quantum Electron. 17(5), 1343–1348 (2011)CrossRef Smowton, P.M., et al.: Temperature-dependent threshold current in InP quantum-dot lasers. IEEE J. Sel. Top. Quantum Electron. 17(5), 1343–1348 (2011)CrossRef
9.
Zurück zum Zitat Shchekin, O., Deppe, D.: The role of p-type doping and the density of states on the modulation response of quantum dot lasers. Appl. Phys. Lett. 80(15), 2758–2760 (2002)CrossRef Shchekin, O., Deppe, D.: The role of p-type doping and the density of states on the modulation response of quantum dot lasers. Appl. Phys. Lett. 80(15), 2758–2760 (2002)CrossRef
10.
Zurück zum Zitat Deppe, D.G., Huang, H., Shchekin, O.B.: Modulation characteristics of quantum-dot lasers: The influence of p-type doping and the electronic density of states on obtaining high speed. IEEE J. Quantum Electron. 38(12), 1587–1593 (2002)CrossRef Deppe, D.G., Huang, H., Shchekin, O.B.: Modulation characteristics of quantum-dot lasers: The influence of p-type doping and the electronic density of states on obtaining high speed. IEEE J. Quantum Electron. 38(12), 1587–1593 (2002)CrossRef
11.
Zurück zum Zitat Deppe, D., Huang, H.: Fermi’s golden rule, nonequilibrium electron capture from the wetting layer, and the modulation response in P-doped quantum-dot lasers. IEEE J. Quantum Electron. 42(3), 324–330 (2006)CrossRef Deppe, D., Huang, H.: Fermi’s golden rule, nonequilibrium electron capture from the wetting layer, and the modulation response in P-doped quantum-dot lasers. IEEE J. Quantum Electron. 42(3), 324–330 (2006)CrossRef
12.
Zurück zum Zitat Deppe, D., Huffaker, D.: Quantum dimensionality, entropy, and the modulation response of quantum dot lasers. Appl. Phys. Lett. 77(21), 3325–3327 (2000)CrossRef Deppe, D., Huffaker, D.: Quantum dimensionality, entropy, and the modulation response of quantum dot lasers. Appl. Phys. Lett. 77(21), 3325–3327 (2000)CrossRef
13.
Zurück zum Zitat Ishida, M., et al.: Photon lifetime dependence of modulation efficiency and K factor in 1.3 μ m self-assembled InAs/GaAs quantum-dot lasers: Impact of capture time and maximum modal gain on modulation bandwidth. Appl. Phys. Lett. 85(18), 4145–4147 (2004)CrossRef Ishida, M., et al.: Photon lifetime dependence of modulation efficiency and K factor in 1.3 μ m self-assembled InAs/GaAs quantum-dot lasers: Impact of capture time and maximum modal gain on modulation bandwidth. Appl. Phys. Lett. 85(18), 4145–4147 (2004)CrossRef
14.
Zurück zum Zitat Ishida, M., et al. High-speed modulation characteristics of 1.3/spl mu/m quantum-dot lasers: influence of effective capture time on the maximum bandwidth. in 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. 2004. IEEE Ishida, M., et al. High-speed modulation characteristics of 1.3/spl mu/m quantum-dot lasers: influence of effective capture time on the maximum bandwidth. in 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. 2004. IEEE
15.
Zurück zum Zitat Uskov, A., et al.: Theory of a self-assembled quantum-dot semiconductor laser with Auger carrier capture: quantum efficiency and nonlinear gain. Appl. Phys. Lett. 73(11), 1499–1501 (1998)CrossRef Uskov, A., et al.: Theory of a self-assembled quantum-dot semiconductor laser with Auger carrier capture: quantum efficiency and nonlinear gain. Appl. Phys. Lett. 73(11), 1499–1501 (1998)CrossRef
16.
Zurück zum Zitat Malic, E., et al.: Coulomb damped relaxation oscillations in semiconductor quantum dot lasers. IEEE J. Sel. Top. Quantum Electron. 13(5), 1242–1248 (2007)CrossRef Malic, E., et al.: Coulomb damped relaxation oscillations in semiconductor quantum dot lasers. IEEE J. Sel. Top. Quantum Electron. 13(5), 1242–1248 (2007)CrossRef
17.
Zurück zum Zitat Fiore, A., Markus, A.: Differential gain and gain compression in quantum-dot lasers. IEEE J. Quantum Electron. 43(4), 287–294 (2007)CrossRef Fiore, A., Markus, A.: Differential gain and gain compression in quantum-dot lasers. IEEE J. Quantum Electron. 43(4), 287–294 (2007)CrossRef
18.
Zurück zum Zitat Bhattacharya, P., et al.: High-speed modulation and switching characteristics of In (Ga) As-Al (Ga) As self-organized quantum-dot lasers. IEEE J. Sel. Top. Quantum Electron. 6(3), 426–438 (2000)CrossRef Bhattacharya, P., et al.: High-speed modulation and switching characteristics of In (Ga) As-Al (Ga) As self-organized quantum-dot lasers. IEEE J. Sel. Top. Quantum Electron. 6(3), 426–438 (2000)CrossRef
19.
Zurück zum Zitat Bhattacharya, P., et al.: Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers. IEEE J. Quantum Electron. 39(8), 952–962 (2003)CrossRef Bhattacharya, P., et al.: Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers. IEEE J. Quantum Electron. 39(8), 952–962 (2003)CrossRef
20.
Zurück zum Zitat Alexander, R.R., et al.: Systematic study of the effects of modulation p-doping on 1.3-$\mu {\hbox m} $ quantum-dot lasers. IEEE J. Quantum Electron. 43(12), 1129–1139 (2007)CrossRef Alexander, R.R., et al.: Systematic study of the effects of modulation p-doping on 1.3-$\mu {\hbox m} $ quantum-dot lasers. IEEE J. Quantum Electron. 43(12), 1129–1139 (2007)CrossRef
21.
Zurück zum Zitat Fathpour, S., Mi, Z.: and Bhattacharya, High-speed quantum dot lasers. J. Phys. D Appl. Phys. 38(13), 2103 (2005)CrossRef Fathpour, S., Mi, Z.: and Bhattacharya, High-speed quantum dot lasers. J. Phys. D Appl. Phys. 38(13), 2103 (2005)CrossRef
22.
Zurück zum Zitat Tong, C., Xu, D., Yoon, S.F.: Carrier relaxation and modulation response of 1.3-$\mu $ m InAs–GaAs quantum dot lasers. J. Lightwave Technol. 27(23), 5442–5450 (2009)CrossRef Tong, C., Xu, D., Yoon, S.F.: Carrier relaxation and modulation response of 1.3-$\mu $ m InAs–GaAs quantum dot lasers. J. Lightwave Technol. 27(23), 5442–5450 (2009)CrossRef
23.
Zurück zum Zitat Sanaee, M., Zarifkar, A.: Theoretical modeling of relative intensity noise in p-doped 1.3-μm InAs/GaAs quantum dot lasers. J. Lightwave Technol. 33(1), 234–243 (2014)CrossRef Sanaee, M., Zarifkar, A.: Theoretical modeling of relative intensity noise in p-doped 1.3-μm InAs/GaAs quantum dot lasers. J. Lightwave Technol. 33(1), 234–243 (2014)CrossRef
24.
Zurück zum Zitat Tan, F., et al.: 850 nm oxide-VCSEL with low relative intensity noise and 40 Gb/s error free data transmission. IEEE Photon. Technol. Lett. 26(3), 289–292 (2013)CrossRef Tan, F., et al.: 850 nm oxide-VCSEL with low relative intensity noise and 40 Gb/s error free data transmission. IEEE Photon. Technol. Lett. 26(3), 289–292 (2013)CrossRef
25.
Zurück zum Zitat Duan, J., et al.: Carrier-noise-enhanced relative intensity noise of quantum dot lasers. IEEE J. Quantum Electron. 54(6), 1–7 (2018)CrossRef Duan, J., et al.: Carrier-noise-enhanced relative intensity noise of quantum dot lasers. IEEE J. Quantum Electron. 54(6), 1–7 (2018)CrossRef
26.
Zurück zum Zitat Dehghaninejad, A., Sheikhey, M.M., Baghban, H.: Dynamic behavior of injection-locked two-state quantum dot lasers. JOSA B 36(6), 1518–1524 (2019)CrossRef Dehghaninejad, A., Sheikhey, M.M., Baghban, H.: Dynamic behavior of injection-locked two-state quantum dot lasers. JOSA B 36(6), 1518–1524 (2019)CrossRef
27.
Zurück zum Zitat Sheikhey, M., et al.: Quantum-dot semiconductor lasers with prominent relative intensity noise and spectral characteristics. Opt. Express 29(7), 10236–10248 (2021)CrossRef Sheikhey, M., et al.: Quantum-dot semiconductor lasers with prominent relative intensity noise and spectral characteristics. Opt. Express 29(7), 10236–10248 (2021)CrossRef
28.
Zurück zum Zitat Capua, A., et al.: Direct correlation between a highly damped modulation response and ultra low relative intensity noise in an InAs/GaAs quantum dot laser. Opt. Express 15(9), 5388–5393 (2007)CrossRef Capua, A., et al.: Direct correlation between a highly damped modulation response and ultra low relative intensity noise in an InAs/GaAs quantum dot laser. Opt. Express 15(9), 5388–5393 (2007)CrossRef
29.
Zurück zum Zitat Lelarge, F., et al.: Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 155$\mu $ m. IEEE J. Select. Top. Quantum Electron. 13(1), 111–124 (2007)CrossRef Lelarge, F., et al.: Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 155$\mu $ m. IEEE J. Select. Top. Quantum Electron. 13(1), 111–124 (2007)CrossRef
30.
Zurück zum Zitat Zhou, Y.-G., et al.: Relative intensity noise of InAs quantum dot lasers epitaxially grown on Ge. Opt. Express 25(23), 28817–28824 (2017)CrossRef Zhou, Y.-G., et al.: Relative intensity noise of InAs quantum dot lasers epitaxially grown on Ge. Opt. Express 25(23), 28817–28824 (2017)CrossRef
31.
Zurück zum Zitat Liao, M., et al.: Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon. Photon. Res. 6(11), 1062–1066 (2018)MathSciNetCrossRef Liao, M., et al.: Low-noise 1.3 μm InAs/GaAs quantum dot laser monolithically grown on silicon. Photon. Res. 6(11), 1062–1066 (2018)MathSciNetCrossRef
32.
Zurück zum Zitat Liu, A.Y., et al.: Reflection sensitivity of 1.3 μm quantum dot lasers epitaxially grown on silicon. Opt. Express 25(9), 9535–9543 (2017)CrossRef Liu, A.Y., et al.: Reflection sensitivity of 1.3 μm quantum dot lasers epitaxially grown on silicon. Opt. Express 25(9), 9535–9543 (2017)CrossRef
33.
Zurück zum Zitat Kovsh, A.: Quantum-dot comb laser with low relative-intensity noise for each mode. SPIE Newsroom, Bellingham (2008)CrossRef Kovsh, A.: Quantum-dot comb laser with low relative-intensity noise for each mode. SPIE Newsroom, Bellingham (2008)CrossRef
34.
Zurück zum Zitat Lin, G., et al.: Analysis of relative intensity noise spectra for uniformly and chirpily stacked InAs–InGaAs–GaAs quantum dot lasers. J. Lightwave Technol. 30(3), 331–336 (2011)CrossRef Lin, G., et al.: Analysis of relative intensity noise spectra for uniformly and chirpily stacked InAs–InGaAs–GaAs quantum dot lasers. J. Lightwave Technol. 30(3), 331–336 (2011)CrossRef
35.
Zurück zum Zitat Tong, C., et al.: Rate equations for 13-$\mu $ m dots-under-a-well and dots-in-a-well self-assembled inas–gaas quantum-dot lasers. IEEE J. Quantum Electron. 42(11), 1175–1183 (2006)CrossRef Tong, C., et al.: Rate equations for 13-$\mu $ m dots-under-a-well and dots-in-a-well self-assembled inas–gaas quantum-dot lasers. IEEE J. Quantum Electron. 42(11), 1175–1183 (2006)CrossRef
36.
Zurück zum Zitat Mukai, K., et al.: 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA. IEEE Photon. Technol. Lett. 11(10), 1205–1207 (1999)CrossRef Mukai, K., et al.: 1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA. IEEE Photon. Technol. Lett. 11(10), 1205–1207 (1999)CrossRef
37.
Zurück zum Zitat Babaabbasi, G., Mir, A., Yavari, M.H.: Modelling of relative intensity noise in QD-VCSEL. J. Lightwave Technol. 40, 3891 (2022)CrossRef Babaabbasi, G., Mir, A., Yavari, M.H.: Modelling of relative intensity noise in QD-VCSEL. J. Lightwave Technol. 40, 3891 (2022)CrossRef
Metadaten
Titel
Theoretical analysis of relative intensity noise in semiconductor QD lasers
verfasst von
Gholaam-Reza Babaabasi
Ali Mir
Mohammad-Hasan Yavari
Publikationsdatum
26.05.2023
Verlag
Springer US
Erschienen in
Journal of Computational Electronics / Ausgabe 4/2023
Print ISSN: 1569-8025
Elektronische ISSN: 1572-8137
DOI
https://doi.org/10.1007/s10825-023-02045-5