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Erschienen in:
2024 | OriginalPaper | Buchkapitel
Thermal Rectifier Nature of InGaN/GaN Heterostructure
verfasst von : Krishna Kumar, Bijaya Kumar Sahoo
Erschienen in: Advances in Photonics and Electronics
Verlag: Springer Nature Switzerland
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Abstract
This work examined the asymmetric thermal transport behavior across the interface between InGaN and GaN layers in order to better understand the thermal rectification capabilities of InGaN/GaN heterostructures. For different compositions of indium, we calculated the phonon transmission coefficient (\(\Gamma\)) for InGaN/GaN contacts. When it comes to the material's customized thermal boundary resistance (TBR) and thermal conductivity (k), which are crucial for heat conduction through the material, Γ is a critical parameter. The theoretical value of Γ is observed to be smaller in the direction of the GaN to InGaN layer than in the opposite direction, where Γ declines in InGaN/GaN SLs as an indication of Indium composition. This type of interface displays the thermal rectifier indicator, which can be used in a variety of electronic and photonic devices for thermal isolation and heat control.