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Erschienen in: Journal of Materials Science: Materials in Electronics 6/2020

12.02.2020

Thermoelectric properties of Bi0.4Sb1.6Te3-based composites with silicon nano-inclusions

verfasst von: Yunchen Dou, Xiaodong Yan, Yong Du, Jiayue Xu, Di Li

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 6/2020

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Abstract

Si/Bi0.4Sb1.6Te3 bulk composites have been prepared by combining mechanical alloying with spark plasma sintering, and their thermoelectric properties have been investigated in the temperature ranges from 298 K to 498 K. The results indicate that with silicon content increasing, the thermopower (S) of the composite system increases substantially. Simultaneously, silicon nano-inclusions cause significant reduction in thermal conductivity (κ) owing to the decreased electrical conductivity and the enhanced phonon scattering of nanoparticles as well as phase boundaries. For the 0.5 vol% Si/Bi0.4Sb1.6Te3 sample, S increases to 224.6 µV K−1 from 210.6 μV K−1 for the sample without silicon and κ decreases to 0.96 Wm−1 K−1 at 423 K from 1.07 Wm−1 K−1 for the sample without silicon, respectively. As a result, the highest ZT of 1.36 is obtained at 423 K of the 0.5 vol% Si/Bi0.4Sb1.6Te3 sample.

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Metadaten
Titel
Thermoelectric properties of Bi0.4Sb1.6Te3-based composites with silicon nano-inclusions
verfasst von
Yunchen Dou
Xiaodong Yan
Yong Du
Jiayue Xu
Di Li
Publikationsdatum
12.02.2020
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 6/2020
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-020-03042-1

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