2007 | OriginalPaper | Buchkapitel
Thin Body Effects to Suppress Random Dopant Fluctuations in Nano-Scaled MOSFETs
verfasst von : Y. Ashizawa, H. Oka
Erschienen in: Simulation of Semiconductor Processes and Devices 2007
Verlag: Springer Vienna
Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.
Wählen Sie Textabschnitte aus um mit Künstlicher Intelligenz passenden Patente zu finden. powered by
Markieren Sie Textabschnitte, um KI-gestützt weitere passende Inhalte zu finden. powered by (Link öffnet in neuem Fenster)
The intrinsic parameter fluctuations induced by random discrete dopants (RDD) in nano-scaled MOSFETs are studied by applying the quantum mechanical approach. The increase of effective oxide thickness (EOT) by the quantum mechanical corrections generally makes gate controllability worse. However, as far as ultra thin body (UTB) devices, the increase of EOT improves gate controllability by suppressing leakage current because it reduces electrical body thickness by the constraint of the physical body thickness.