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Erschienen in:
21.12.2019
Ti doping enhanced alumina dielectrics for low-voltage thin-film transistors via low-temperature lightwave irradiation
Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 8/2020
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Abstract
Herein, we report a high-k Al1 − xTixO dielectric films and device applications via a facile low-temperature lightwave irradiation process. The Al1 − xTixO films possess the smooth surface with subnanometer roughness. The successful doping of Ti in Al2O3 films was confirmed via several characterizations. The properties of Al1 − xTixO films are highly dependent on the ratio of Ti. With the introduction of 20% Ti, Al1 − xTixO films obtain much better properties than single TiO2 and Al2O3. The leakage current density reached 6.4 × 10− 8 A/cm2, and its capacitance is as high as 168 nF/cm2 (at 1000 Hz). For the device applications, InZnO/Al1 − xTixO TFTs show enhanced performance, such as a great field-effect mobility of 12.5 cm2/Vs, while InZnO/Al2O3 TFTs have a mobility of 5.7 cm2/Vs. Moreover, the operating voltage is as low as 3 V. The low-temperature lightwave irradiated Al1 − xTixO films, without high temperature or vacuum process, reveal great potential for the low-cost- but high-performance electronics.