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Erschienen in: Journal of Materials Science: Materials in Electronics 15/2019

12.07.2019

Tin dioxide nanoparticles with high sensitivity and selectivity for gas sensors at sub-ppm level of hydrogen gas detection

verfasst von: Xi-Tao Yin, Wen-Dong Zhou, Jing Li, Pin Lv, Qi Wang, Dong Wang, Fa-yu Wu, Davoud Dastan, Hamid Garmestani, Zhicheng Shi, Ştefan Ţălu

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 15/2019

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Abstract

A wet chemical method was employed to prepare Au-loaded sensor using tin dioxide (SnO2) nanoparticles (NPs) which has excellent hydrogen (H2) gas sensing properties. The structural, compositional, morphological, and electrochemical properties of these materials are characterized by X-ray diffraction, field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy and electrochemical workstation, respectively. The results show that the response time of Au-loaded sensor based on SnO2 NPs to 100 ppm H2 is 26 s at 350 °C, which is much shorter than that of the pristine SnO2 sensor. Meanwhile, the effect of operating temperature and Au loading on ‘n’ value (factor for evaluating sensitivity response) is studied and the results demonstrated that the Au-loaded sensor based on SnO2 NPs can detect H2 gas down to 0.4 ppm. Moreover, the Au-loaded sensor based on SnO2 NPs with an excellent selectivity to H2 gas against carbon monoxide, methane, and sulfur dioxide is illustrated in this paper, which indicates that the Au-loaded sensor using SnO2 NPs is a good candidate for practical H2 sensors and other industrial applications. Statistical analysis was performed on the FESEM images of sensors based on SnO2 NPs and 0.5 atomic (at)% Au-loaded SnO2 NPs. Roughness parameters were evaluated and a correlation was established between the morphology, topography and chemical composition of the samples.

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Metadaten
Titel
Tin dioxide nanoparticles with high sensitivity and selectivity for gas sensors at sub-ppm level of hydrogen gas detection
verfasst von
Xi-Tao Yin
Wen-Dong Zhou
Jing Li
Pin Lv
Qi Wang
Dong Wang
Fa-yu Wu
Davoud Dastan
Hamid Garmestani
Zhicheng Shi
Ştefan Ţălu
Publikationsdatum
12.07.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 15/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-01840-w

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