1988 | OriginalPaper | Buchkapitel
Transistor Design for Submicron CMOS Technology
verfasst von : Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin
Erschienen in: Computer-Aided Design and VLSI Device Development
Verlag: Springer US
Enthalten in: Professional Book Archive
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In this chapter, the design of transistors for submicron CMOS technology will be presented. The advantages of, as well as issues involved in CMOS technology will first be discussed. Then the concerns for the design of n- and p-channel MOSFET’s with submicron channel lengths will be discussed. Using simulations, the values of the critical device parameters are determined which will minimize leakage problems in submicron transistors.