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2007 | OriginalPaper | Buchkapitel

Transport in Silicon Nanowire and Single-Electron Transistors

verfasst von: Toshiro Hiramoto, Kousuke Miyaji, Masaharu Kobayashi

Erschienen in: Simulation of Semiconductor Processes and Devices 2007

Verlag: Springer Vienna

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We have extensively investigated transport properties of nanowire MOSFETs and single-electron/single-hole transistors by experiments and band calculations. Special focus has been placed on measurements and physics of the channel direction dependence and charge polarity dependence. We adopted a special device structure with a common n-type and p-type channel. We confirmed that a [110]-directed nanowire p-type FET has the smallest

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fluctuations caused by the size variations. We also verified that a [100]-directed single-hole transistor is the best device for the single-charge transistor operations. Actually, we observed Coulomb blockade oscillations with the record high peak-to-valley-current ratio of 480 at room temperature in a [100] single-hole transistor.

Metadaten
Titel
Transport in Silicon Nanowire and Single-Electron Transistors
verfasst von
Toshiro Hiramoto
Kousuke Miyaji
Masaharu Kobayashi
Copyright-Jahr
2007
Verlag
Springer Vienna
DOI
https://doi.org/10.1007/978-3-211-72861-1_50