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Erschienen in:
2001 | OriginalPaper | Buchkapitel
Two-Dimensional Model for the Subthreshold Slope in Deep-Submicron Fully-Depleted SOI MOSFET’s
verfasst von : Hans Van Meer, Kristin De Meyer
Erschienen in: Simulation of Semiconductor Processes and Devices 2001
Verlag: Springer Vienna
Enthalten in: Professional Book Archive
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A 2D analytical model for the calculation of the subthreshold slope has been derived for deep-submicron Fully-Depleted SOI MOSFET’s using a Green’s function solution technique. The accuracy of the equations has been verified by a 2D numerical device simulator. It is shown that the analytically derived model for the subthreshold slope is in good agreement with 2D numerical simulation data.