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Erschienen in: Journal of Materials Science 17/2016

24.05.2016 | Original Paper

Ultra-low-κ HFPDB-based periodic mesoporous organosilica film with high mechanical strength for interlayer dielectric

verfasst von: Jiawei Zhang, Guoping Zhang, Yongju Gao, Rong Sun, C. P. Wong

Erschienen in: Journal of Materials Science | Ausgabe 17/2016

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Abstract

A novel bridged organosilane precursor with star-shaped construction, [hexfluoropropane-2,2-diyl)dibenzyl-bridged organosilane (HFPDBO)], is prepared by facile organic synthesis method. The resultant HFPDBO precursor is mixed with porogen and acid catalyst to prepare periodic mesoporous organosilica (PMO) thin film via evaporation-induced self-assembly after spin-coating procedure. All the as-prepared HFPDB-based PMO thin film has been characterized by Fourier transform infrared spectroscopy, nuclear magnetic resonance spectrum, scanning electron microscopy, transmission electron microscope, and small-angle X-ray diffraction, respectively. Thereinto, the HFPDB-based PMO thin film with weight ratio of porogen to precursor (0.75:1) possesses excellent dielectric property (1.58@1 MHz of dielectric constants), high mechanical property (5.54 ± 0.11 GPa of Young’s modulus) and hydrophobic property (90.1° of water contact angle) simultaneously. These low dielectric constant, high mechanical strength, and the hydrophobicity suggest potential application of the HFPDB-based PMO thin films as low-k materials in microelectronics.

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Metadaten
Titel
Ultra-low-κ HFPDB-based periodic mesoporous organosilica film with high mechanical strength for interlayer dielectric
verfasst von
Jiawei Zhang
Guoping Zhang
Yongju Gao
Rong Sun
C. P. Wong
Publikationsdatum
24.05.2016
Verlag
Springer US
Erschienen in
Journal of Materials Science / Ausgabe 17/2016
Print ISSN: 0022-2461
Elektronische ISSN: 1573-4803
DOI
https://doi.org/10.1007/s10853-016-0066-6

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