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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 6/2015

01.06.2015

Ultraviolet nano-photodetector based on ZnS:Cl nanoribbon/Au Schottky junctions

verfasst von: Li Wang, Xu Ma, Ran Chen, Yong-Qiang Yu, Lin-Bao Luo

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 6/2015

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Abstract

We report on a semiconductor nanostructures/metal Schottky junction for optoelectronic device application. The n-type ZnS nanoribbons (NRs) with an electron mobility of 64.9 cm V−1 s−1 and electron concentration of 5.7 × 1017 cm−3 were synthesized by using Cl as dopant via a thermal co-evaporation method. Electrical analysis reveals that the Schottky barrier diodes (SBD) based on the ZnS:Cl NRs/Au junctions exhibited typical rectifying behavior (rectification ratio >103) with Schottky barrier height of .64 eV and a small ideality factor of ~1.05 at 320 K. Interestingly, n-ZnS:Cl NR/Au nano-SBD device exhibited pronounced negative photoresponse at forward bias, but positive photoresponse at reverse bias under 365 nm UV light irradiation. Finally, the detailed reason for this phenomenon was explained by the energy band diagram.
Vorheriger Artikel Morphology evolution of nano-structured InN grown by MOMBE
Nächster Artikel Microstructural, crystallographic and optical characterizations of Cu-doped ZnO nanoparticles co-doped with Ni

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Metadaten
Titel
Ultraviolet nano-photodetector based on ZnS:Cl nanoribbon/Au Schottky junctions
verfasst von
Li Wang
Xu Ma
Ran Chen
Yong-Qiang Yu
Lin-Bao Luo
Publikationsdatum
01.06.2015
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 6/2015
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-015-2981-8

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