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Journal of Materials Science: Materials in Electronics
Erschienen in: Journal of Materials Science: Materials in Electronics 16/2017

25.04.2017

Unipolar nonvolatile memory devices based on the composites of poly(9-vinylcarbazole) and zinc oxide nanoparticles

verfasst von: Enming Zhao, Diyou Liu, Lu Liu, Xinghua Yang, Wei Kan, Yanmei Sun

Erschienen in: Journal of Materials Science: Materials in Electronics | Ausgabe 16/2017

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Abstract

The application of poly(9-vinylcarbazole) (PVK) to make a composite with zinc oxide (ZnO) as the active layer has been reported. Unipolar resistive switching behaviors were observed from ITO/PVK + ZnO/Al memory devices. The reset voltages were higher than the set voltages. These devices present a low resistance state (LRS)/high resistance state (HRS) current ratio of 104 when read at −0.5 V, retaining the information for a time of 105 s. The bistable resistive switching behaviors were entirely steady within 104 cycles. The fitted results of I–V curves shown that the dominant conduction mechanisms in LRS and HRS were Ohmic conductive behavior and space-charge-limited current mechanism, respectively.
Vorheriger Artikel Hydroxy functionalized ionic liquids as promising electrolytes for supercapacitor study of α-Fe2O3 thin films
Nächster Artikel Electrolytic anion affected charge storage mechanisms of Fe3O4 flexible thin film electrode in KCl and KOH: a comparative study by cyclic voltammetry and galvanostatic charge–discharge

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Metadaten
Titel
Unipolar nonvolatile memory devices based on the composites of poly(9-vinylcarbazole) and zinc oxide nanoparticles
verfasst von
Enming Zhao
Diyou Liu
Lu Liu
Xinghua Yang
Wei Kan
Yanmei Sun
Publikationsdatum
25.04.2017
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 16/2017
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-017-6979-2

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