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Erschienen in: Metallurgical and Materials Transactions A 6/2016

12.04.2016

Wettability of Molten Aluminum-Silicon Alloys on Graphite and Surface Tension of Those Alloys at 1273 K (1000 °C)

verfasst von: Weiji Mao, Takayasu Noji, Kenichiro Teshima, Nobuya Shinozaki

Erschienen in: Metallurgical and Materials Transactions A | Ausgabe 6/2016

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Abstract

The wettability of molten aluminum-silicon alloys with silicon contents of 0, 6, 10, and 20 mass pct on graphite substrates by changing the placing sequence of aluminum and silicon and the surface tension of those alloys were investigated at 1273 K (1000 °C) using the sessile drop method under vacuum. The results showed that the wetting was not affected by changing the placing sequence of the Al-Si alloys on the graphite substrates. The wettability was not improved significantly upon increasing the Si content from 0 to 10 mass pct, whereas a notable decrease of 22 deg in the contact angle was observed when increasing the Si content from 10 to 20 mass pct. This was attributed to the transformation of the interfacial reaction product from Al4C3 into SiC, provided the addition of Si to Al was sufficient. It was verified that the liquid Al can wet the SiC substrate very well in nature, which might explain why the occurrence of SiC would improve the wettability of the Al-20 mass pct Si alloy on the graphite substrate. The results also showed that the surface tension values of the molten Al-Si alloys decreased monotonously with an increase in Si content, being 875, 801, 770, and 744 mN/m for molten Al, Al-6 mass pct Si, Al-10 mass pct Si, and Al-20 mass pct Si alloys, respectively.

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Metadaten
Titel
Wettability of Molten Aluminum-Silicon Alloys on Graphite and Surface Tension of Those Alloys at 1273 K (1000 °C)
verfasst von
Weiji Mao
Takayasu Noji
Kenichiro Teshima
Nobuya Shinozaki
Publikationsdatum
12.04.2016
Verlag
Springer US
Erschienen in
Metallurgical and Materials Transactions A / Ausgabe 6/2016
Print ISSN: 1073-5623
Elektronische ISSN: 1543-1940
DOI
https://doi.org/10.1007/s11661-016-3460-4

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