Zum Inhalt

X-ray induced Sm-ion valence conversion in Sm-ion implanted fluoroaluminate glasses towards high-dose radiation measurement

  • 01.04.2019
Erschienen in:

Aktivieren Sie unsere intelligente Suche, um passende Fachinhalte oder Patente zu finden.

search-config
loading …

Abstract

Ion implantation of Sm-ions has been tested in fabricating 2D detectors for microbeam radiation therapy (MRT). Sm-ions have been successfully implanted into fluoroaluminate (FA) glasses. The implantation concentration was chosen to be 5 × 1015 ions/cm2 and the ions were implanted at an energy of 2 MeV. After implantation, samarium ions resided within a thin plane very near the surface in the glass, which is expected to be beneficial for 2D imaging. Following implantation, photoluminescence (PL) spectra indicate that the embedded Sm-ions are in the form of Sm2+ and Sm3+. Subsequent annealing around the glass transition temperature (475 °C) converts all Sm2+ ions into Sm3+. Under X-ray irradiation, a partial conversion of Sm3+ into Sm2+ has been observed which may be used as measure of the X-ray dose delivered into the sample. QFRS (quadrature-frequency-resolved-spectroscopy) measurements on PL prominent emissions from Sm3+ and Sm2+ ions show that the PL decays associated with various transitions are in the 0.1 to 100 ms range (slow transitions). X-ray irradiation has led also to the appearance of broad and intense photoluminescence bands associated with X-ray induced structural defects in the host glass as confirmed in the unimplanted FA glasses. The generation of hole trapping centers in the host glass leads to the capture of photogenerated holes and thus allows the electrons to convert Sm3+ to Sm2+. Defect related PL decay signals were measured to be in the nanosecond region. These unwanted defect related fast decaying signals have been separated from slow Sm2+ and Sm3+ photoluminescence signals by using an “out-of-phase” PL measurements through a phase-sensitive photodetection technique with a modulated excitation laser diode and a lock-in amplifier. Overall, the Sm-ion implanted fluoroaluminate glass shows the successful conversion from the trivalent form of samarium (Sm3+) to the divalent form (Sm3+) under X-ray irradiation over a large dynamic range of X-ray intensities (800 Gy in air).

Sie haben noch keine Lizenz? Dann Informieren Sie sich jetzt über unsere Produkte:

Springer Professional "Wirtschaft+Technik"

Online-Abonnement

Mit Springer Professional "Wirtschaft+Technik" erhalten Sie Zugriff auf:

  • über 130.000 Bücher
  • über 540 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Maschinenbau + Werkstoffe
  • Oberflächen + Materialtechnik
  • Versicherung + Risiko

Jetzt Wissensvorsprung sichern!

Springer Professional "Technik"

Online-Abonnement

Mit Springer Professional "Technik" erhalten Sie Zugriff auf:

  • über 75.000 Bücher
  • über 390 Zeitschriften

aus folgenden Fachgebieten:

  • Automobil + Motoren
  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Elektrotechnik + Elektronik
  • Energie + Nachhaltigkeit
  • Maschinenbau + Werkstoffe
  • Oberflächen + Materialtechnik




 

Jetzt Wissensvorsprung sichern!

Springer Professional "Wirtschaft"

Online-Abonnement

Mit Springer Professional "Wirtschaft" erhalten Sie Zugriff auf:

  • über 100.000 Bücher
  • über 340 Zeitschriften

aus folgenden Fachgebieten:

  • Bauwesen + Immobilien
  • Business IT + Informatik
  • Finance + Banking
  • Management + Führung
  • Marketing + Vertrieb
  • Versicherung + Risiko




Jetzt Wissensvorsprung sichern!

Titel
X-ray induced Sm-ion valence conversion in Sm-ion implanted fluoroaluminate glasses towards high-dose radiation measurement
Verfasst von
Farley Chicilo
Cyril Koughia
Richard Curry
Russel Gwilliam
Ruben Ahumada-Lazo
Andy Edgar
David J. Binks
Dean Chapman
Safa Kasap
Publikationsdatum
01.04.2019
Verlag
Springer US
Erschienen in
Journal of Materials Science: Materials in Electronics / Ausgabe 18/2019
Print ISSN: 0957-4522
Elektronische ISSN: 1573-482X
DOI
https://doi.org/10.1007/s10854-019-01212-4
Dieser Inhalt ist nur sichtbar, wenn du eingeloggt bist und die entsprechende Berechtigung hast.