Optical Constants of Arsenic and Boron Implants in Silicon Determined by a Four‐Phase Complex Refractive Index Model

Arsenic and boron implantation damage in silicon is analyzed by a four‐phase complex refractive index model approximation coupled with multiple‐angle of incidence ellipsometry. Boron, as B⁺, and arsenic monomer (As⁺) and dimer implants are examined as functions of ion dose from , and effective energy from 31 to 60 keV. Implant depths obtained from this analysis are related to the LSS theory statistics and are found to be equal to for arsenic and for boron. These relationships are invariant with respect to the effective energy and ion dose used. Changes in the refractive index, extinction coefficient, and reflectivity are readily detected at doses as low as ∼10¹² ions‐cm⁻² for arsenic, whereas for boron these changes are considerably less pronounced at all doses up to at least 10¹⁵ ions‐cm⁻². The application of this methodology to the study of lateral nonuniformities in damage is demonstrated by contour mapping the deviation in effective optical constants across the wafer surface.