Island size scaling for submonolayer growth of InAs on GaAs(001)-<span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mo>(</mo><mn>2</mn><mn></mn><mo>×</mo><mn>4</mn><mo>)</mo><mo>:</mo></math></span> Strain and surface reconstruction effects

G. R. Bell; T. J. Krzyzewski; P. B. Joyce; T. S. Jones

doi:10.1103/PhysRevB.61.R10551

Rapid Communication

Island size scaling for submonolayer growth of InAs on GaAs(001)- $(2 \times 4) :$ Strain and surface reconstruction effects

G. R. Bell, T. J. Krzyzewski, P. B. Joyce, and T. S. Jones

Phys. Rev. B 61, R10551(R) – Published 15 April 2000

Abstract

The submonolayer growth by molecular beam epitaxy of InAs on the GaAs(001)- $(2 \times 4)$ surface has been studied using rapid-quench scanning tunneling microscopy. InAs islands exhibiting the $(2 \times 4)$ reconstruction are formed and show remarkably similar characteristics to GaAs submonolayer homoepitaxy on this surface. Detailed analysis of the islands indicates that strain plays a negligible role in their nucleation, and the $(2 \times 4)$ reconstruction dominates both island growth and island anisotropy.

Received 11 January 2000

DOI:https://doi.org/10.1103/PhysRevB.61.R10551

Authors & Affiliations

G. R. Bell, T. J. Krzyzewski, P. B. Joyce, and T. S. Jones^*

Centre for Electronic Materials and Devices and Department of Chemistry, Imperial College of Science, Technology and Medicine, London SW7 2AY, United Kingdom

^*FAX: 44(0)207-594-5801. Electronic address: t.jones@ic.ac.uk

References (Subscription Required)

Click to Expand

Issue

Vol. 61, Iss. 16 — 15 April 2000

Reuse & Permissions

Access Options

Author publication services for translation and copyediting assistance advertisement

Physical Review B

covering condensed matter and materials physics