Abstract
The thermoelectric figure of merit is measured and theoretically analyzed for -type Si-doped InGaAlAs III-V quaternary alloys at high temperatures. The Seebeck coefficient, electrical conductivity, and thermal conductivity of a Si-doped of thickness lattice matched to InP substrate grown by molecular-beam epitaxy are measured up to 800 K. The measurement results are analyzed using the Boltzmann transport theory based on the relaxation-time approximation and the theoretical calculation is extended to find optimal carrier densities that maximize the figure of merit at various temperatures. The figure of merit of 0.9 at 800 K is measured at a doping level of and the theoretical prediction shows that the figure of merit can reach 1.3 at 1000 K at a doping level of .
1 More- Received 9 February 2010
DOI:https://doi.org/10.1103/PhysRevB.81.235209
©2010 American Physical Society