Salin Junsangsri
ABSTRACT
This paper presents the design of a non-volatile register file using cells made of a SRAM and a Programmable Metallization Cell (PMC). The proposed cell is a symmetric 8T2P (8-transistors, 2PMC) design; it utilizes three control lines to ensure the correctness in its operations (i.e. Write, Read, Store and Restore). Simulation results using HSPICE are provided for the cell as well as the register file array (both one- and two-dimensional schemes). At cell level, it is shown that the off-state resistance has a limited effect on the Read time, because in the proposed circuit the transistor connecting the PMCs to the SRAM is off. While having no significant effect on the Store time, the time of the Restore operation depends on the value of the off-state resistance, i.e. an increase in off-state PMC resistance causes an increase in Restore time. Comparison between non-volatile register files utilizing either PMCs, or Phase Change Memories (PCMs) is provided. The register file using PMCs has a faster Store and Read times than the PCM-based counterpart; this is mostly caused by the difference in resistance values for these two non-volatile technologies. The lower delay involved in these operations confirms that the proposed PMC-based register file offers significant advantages in terms of delay performance.
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Index Terms
- A Design of a Non-Volatile PMC-Based (Programmable Metallization Cell) Register File
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