III–Nitride UV Devices

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Published 11 October 2005 Copyright (c) 2005 The Japan Society of Applied Physics
, , Citation M. Asif Khan et al 2005 Jpn. J. Appl. Phys. 44 7191 DOI 10.1143/JJAP.44.7191

1347-4065/44/10R/7191

Abstract

The need for efficient, compact and robust solid-state UV optical sources and sensors had stimulated the development of optical devices based on III–nitride material system. Rapid progress in material growth, device fabrication and packaging enabled demonstration of high efficiency visible-blind and solar-blind photodetectors, deep-UV light-emitting diodes with emission from 400 to 250 nm, and UV laser diodes with operation wavelengths ranging from 340 to 350 nm. Applications of these UV optical devices include flame sensing; fluorescence-based biochemical sensing; covert communications; air, water and food purification and disinfection; and biomedical instrumentation. This paper provides a review of recent advances in the development of UV optical devices. Performance of state-of-the-art devices as well as future prospects and challenges are discussed.

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10.1143/JJAP.44.7191