Abstract
A novel method for fabricating high efficiency metal 
Schottky barrier solar cells is reported. The method is based on the fabrication of 
or 
thin films chemically deposited with and without silicotungstic acid (STA). The performances of the Schottky junctions fabricated with the films deposited with STA,
, or 
, are significantly higher than those deposited without STA. Under AM1 illumination, the photovoltaic properties of the improved 
diode showed 
, 
, 
, and efficiency 
. Analogous results are obtained on 
, where the photovoltaic response of the improved diode showed 
, 
, 
, and 
. The ideality factor 
and saturation current density
were also significantly improved. C‐V measurements at 1 MHz showed that the barrier height 
of the fabricated diodes are 0.62 and 0.59 eV for 
and 
junctions, respectively, and 0.81 and 0.80 eV for 
and
junctions, respectively. It is also observed that the 
values are independent of the metal work functions
. This is attributed to the Fermi level pinning of 
or 
films deposited with and without STA.