Excitons in ZnSe-ZnS strained-layer superlattices

Hidemitsu Hayashi and Shin’ichi Katayama
Phys. Rev. B 39, 8743 – Published 15 April 1989
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Abstract

We present a theoretical study of excitons in ZnSe-ZnS strained-layer superlattices within an effective-mass approximation. A simple description of excitons in a quantum well is adopted because of a good agreement of the calculated subband energy of the superlattice with that of the quantum well. We demonstrate the exciton effects on the optical gap of ZnSe-ZnS superlattices by a variational method. The calculated optical gap exhibits inverse-square dependence on the well width, which is consistent with recent experimental data.

  • Received 14 November 1988

DOI:https://doi.org/10.1103/PhysRevB.39.8743

©1989 American Physical Society

Authors & Affiliations

Hidemitsu Hayashi

  • Institute for Molecular Science, Okazaki 444, Japan

Shin’ichi Katayama

  • General Education Department, Niigata University, Niigata 950-21, Japan

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Issue

Vol. 39, Iss. 12 — 15 April 1989

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