Polariton light-emitting diode in a GaAs-based microcavity

Daniele Bajoni, Elizaveta Semenova, Aristide Lemaître, Sophie Bouchoule, Esther Wertz, Pascale Senellart, and Jacqueline Bloch
Phys. Rev. B 77, 113303 – Published 5 March 2008

Abstract

Cavity polaritons have been shown these last years to exhibit a rich variety of nonlinear behaviors which could be used in new polariton based devices. Operation in the strong coupling regime under electrical injection remains a key step toward a practical polariton device. We report here on the realization of a polariton based light-emitting diode using a GaAs microcavity with doped Bragg mirrors. Both photocurrent and electroluminescence spectra are governed by cavity polaritons up to 100K.

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  • Received 11 January 2008

DOI:https://doi.org/10.1103/PhysRevB.77.113303

©2008 American Physical Society

Authors & Affiliations

Daniele Bajoni, Elizaveta Semenova, Aristide Lemaître, Sophie Bouchoule, Esther Wertz, Pascale Senellart, and Jacqueline Bloch*

  • CNRS-Laboratoire de Photonique et de Nanostructures, Route de Nozay, 91460 Marcoussis, France

  • *jacqueline.bloch@lpn.cnrs.fr

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Issue

Vol. 77, Iss. 11 — 15 March 2008

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