Abstract
On the basis of phenomenological theory, ferroelectric films with cells finite in three dimensions are studied by considering their practical applications in ferroelectric random-access memory. The lateral size dependence of the Curie temperature and the polarization is obtained and the stability of the ferroelectricity of the cells is discussed.
- Received 28 November 1994
DOI:https://doi.org/10.1103/PhysRevB.51.17235
©1995 American Physical Society