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2012 | OriginalPaper | Buchkapitel

6. Formation of Epitaxial Graphene

verfasst von : D. Kurt Gaskill, Luke O. Nyakiti

Erschienen in: Graphene Nanoelectronics

Verlag: Springer US

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Abstract

This chapter starts off with a discussion on the history of graphite growth on SiC. It then gives an overview of various methods to grow epitaxial graphene on SiC; methods discussed include growth on various polytypes, at different vacuum levels and gas flows, and on both the Si- and C-face of SiC. Structural and electronic properties of these films are looked into along with carrier mobility results from Hall-bar and FET-structures where available.

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Vorheriges Kapitel Transport of Novel State Variables

Nächstes Kapitel Graphene Growth by CVD Methods

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Titel: Formation of Epitaxial Graphene
verfasst von: D. Kurt Gaskill
Luke O. Nyakiti
Verlag: Springer US
Buch: Graphene Nanoelectronics
Print ISBN: 978-1-4614-0547-4

Electronic ISBN: 978-1-4614-0548-1

Copyright-Jahr: 2012
DOI: https://doi.org/10.1007/978-1-4614-0548-1_6