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2012 | OriginalPaper | Buchkapitel

4. Alternative State Variables for Graphene Transistors

verfasst von : Kosmas Galatsis, Alexander Shailos, Ajey P. Jacob, Kang L. Wang

Erschienen in: Graphene Nanoelectronics

Verlag: Springer US

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Abstract

This chapter provides an outlook of some important state variables used to enable graphene based nanoelectronic devices. State variables are physical representations of information used to perform information processing via memory, logic and transmission functionality. Recent advances in scalable graphene and controllable nanoribbons has provided hope for graphene based nanodevices, including more exotic devices that employ alternative state variables. This chapter will discuss a few such devices including electron charge as used in FET devices, electron spin as used in Spin FET devices, pseudospin as used in BiSFET devices, phonons as used in thermal logic and molecular charge as used in atomic mechanical switches.

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Vorheriges Kapitel Graphene Transistors

Nächstes Kapitel Transport of Novel State Variables

K. Novoselov, A. Geim, S. Morozov, D. Jiang, Y. Zhang, S. Dubonos, I. Grigorieva, and A. Firsov, “Electric field effect in atomically thin carbon films,” Science vol. 306, p. 666, 2004.CrossRef

K. Galatsis, A. Khitun, R. Ostroumov, K. Wang, W. Dichtel, E. Plummer, J. Stoddart, J. Zink, J. Lee, and Y. Xie, “Alternate State Variables for Emerging Nanoelectronic Devices,” Nanotechnology, IEEE Transactions on vol. 8, pp. 66–75, 2009.CrossRef

J. D. Meindl, “Low power microelectronics: retrospect and prospect,” Proceedings of the IEEE vol. 83, pp. 619–635, 1995.CrossRef

Y. Taur, “CMOS design near the limit of scaling,” IBM Journal of Research and Development vol. 46, pp. 213–222, 2002.CrossRef

J. Hutchby, G. Bourianoff, V. Zhirnov, and J. Brewer, “Extending the road beyond CMOS,” Circuits and Devices Magazine, IEEE vol. 18, pp. 28–41, 2002.CrossRef

J. Meyer, A. Geim, M. Katsnelson, K. Novoselov, T. Booth, and S. Roth, “The structure of suspended graphene sheets,” Nature vol. 446, pp. 60–63, 2007.CrossRef

M. Han, B. Özyilmaz, Y. Zhang, and P. Kim, “Energy band-gap engineering of graphene nanoribbons,” Physical review letters vol. 98, p. 206805, 2007.CrossRef

X. Wang, Y. Ouyang, X. Li, H. Wang, J. Guo, and H. Dai, “Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors,” Physical review letters vol. 100, p. 206803, 2008.CrossRef

L. Mao, “Finite size effects on the gate leakage current in graphene nanoribbon field-effect transistors,” Nanotechnology vol. 20, p. 275203, 2009.CrossRef

10.

S. Russo, M. Craciun, M. Yamamoto, A. Morpurgo, and S. Tarucha, “Contact resistance in graphene-based devices,” Physica E: Low-dimensional Systems and Nanostructures 2009.

11.

L. Liao, Y. Lin, M. Bao, R. Cheng, J. Bai, Y. Liu, Y. Qu, K. Wang, Y. Huang, and X. Duan, “High-speed graphene transistors with a self-aligned nanowire gate,” Nature vol. 467, pp. 305–308, 2010.CrossRef

12.

R. W. Keyes and R. Landauer, “Minimal energy dissipation in logic,” IBM Journal of Research & Development vol. 14, pp. 152–7, 1970.CrossRef

13.

R. Landauer, “Irreversibility and heat generation in the computing process,” IBM Journal of Research & Development vol. 5, p. 183, 1961.MathSciNetMATHCrossRef

14.

R. Landauer, “Computation: a fundamental physical view,” Physica Scripta vol. 35, pp. 88–95, 1987.CrossRef

15.

C.Shannon, “The mathematical theory of communication,” Bell Systems Technical Journal vol. 27, pp. 379–423, Mar 1948 1948.MathSciNetMATH

16.

J. D. Meindl, “A history of low power electronics: how it began and where it’s headed,” in Proceedings 1997 International Symposium on Low Power Electronics and Design (IEEE Cat. No.97TH8332). ACM. 1997, pp. 149–51. New York, NY, USA.

17.

J. D. Meindl and J. A. Davis, “The fundamental limit on binary switching energy for terascale integration (TSI),” IEEE Journal of Solid-State Circuits vol. 35, pp. 1515–16, 2000.CrossRef

18.

V. V. Zhirnov, R. K. Cavin, III, J. A. Hutchby, and G. I. Bourianoff, “Limits to binary logic switch scaling - a gedanken model,” Proceedings of the IEEE vol. 91, pp. 1934–9, 2003.CrossRef

19.

R. W. Keyes, “Fundamental limits in digital information processing,” Proceedings of the IEEE vol. 69, pp. 267–78, 1981.CrossRef

20.

K. L. Wang, K. Galatsis, R. Ostroumov, M. Ozkan, K. Likharev, and Y. Botros, “Nanoarchitectonics: Advances in Nanoelectronics,” in Handbook of Nanoscience, Engineering and Technology, 2nd ed, W. A. Goddard, III, W. D. Brenner, S. E. Lyshevski, and J. G. Iafrate, Eds. Boca Raton: CRC Press, 2007.

21.

R. Ostroumov and K. L. Wang, “On Power Dissipation in Information Processing,” in American Physical Society, Los Angeles, 2005.

22.

R. Ostroumov and K. L. Wang, “Fundamental power dissipation in scaled CMOS and beyond,” in Proceedings of the SRC Techcon Conference, Portland, 2005.

23.

ITRS, “International Technology Roadmap for Semiconductors, 2005,” Semiconductor Industry Association (SIA) http://public.itrs.net/Reports.htm.

24.

K. Majumdar, K. V. R. M. Murali, N. Bhat, and Y.-M. Lin, “External Bias Dependent Direct To Indirect Band Gap Transition in Graphene Nanoribbon,” Nano Letters vol. 10, pp. 2857–2862, 2010.CrossRef

25.

R. Singh, J. O. Poole, K. F. Poole, and S. D. Vaidya, “Fundamental device design considerations in the development of disruptive nanoelectronics,” Journal of Nanoscience and Nanotechnology vol. 2, pp. 363–8, 2002.CrossRef

26.

J. R. Heath, “Molecular Electronics,” Annual Review of Materials Research vol. 39, pp. 1–23, 2009.CrossRef

27.

M. Butts, A. DeHon, and S. C. Goldstein, “Molecular electronics: devices, systems and tools for gigagate, gigabit chips,” in IEEE/ACM International Conference on Computer Aided Design. IEEE/ACM Digest of Technical Papers (Cat. No.02CH37391). IEEE. 2002, pp. 433–40. Piscataway, NJ, USA.

28.

K. K. Likharev and D. B. Strukov, “CMOL: devices, circuits, and architectures,” Introducing Molecular Electronics. Springer-Verlag. 2005 pp. 447–77.

29.

J. E. Green, J. Wook Choi, A. Boukai, Y. Bunimovich, E. Johnston-Halperin, E. DeIonno, Y. Luo, B. A. Sheriff, K. Xu, Y. Shik Shin, H.-R. Tseng, J. F. Stoddart, and J. R. Heath, “A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre,” Nature vol. 445, pp. 414–417, 2007/01/25/print 2007.

30.

D. Eigler, C. Lutz, and W. Rudge, “An atomic switch realized with the scanning tunnelling microscope,” 1991.

31.

W. Dichtel, J. Heath, and J. Fraser Stoddart, “Designing bistable [2] rotaxanes for molecular electronic devices,” Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences vol. 365, p. 1607, 2007.CrossRef

32.

S. Kabehie, A. Stieg, M. Xue, M. Liong, K. Wang, and J. Zink, “Surface Immobilized Heteroleptic Copper Compounds as State Variables that Show Negative Differential Resistance,” The Journal of Physical Chemistry Letters vol. 1, pp. 589–593, 2010.CrossRef

33.

T. Rueckes, K. Kim, E. Joselevich, G. Y. Tseng, C.-L. Cheung, and C. M. Lieber, “Carbon Nanotube-Based Nonvolatile Random Access Memory for Molecular Computing,” Science vol. 289, pp. 94–97, July 7, 2000 2000.CrossRef

34.

K. Milaninia, M. Baldo, A. Reina, and J. Kong, “All graphene electromechanical switch fabricated by chemical vapor deposition,” Applied Physics Letters vol. 95, p. 183105, 2009.CrossRef

35.

B. Standley, W. Bao, H. Zhang, J. Bruck, C. Lau, and M. Bockrath, “Graphene-based atomic-scale switches,” Nano Lett vol. 8, pp. 3345–3349, 2008.CrossRef

36.

M. Bockrath, J. Bruck, and N.-C. Yeh, “Graphene Atomic Switches for Ultra-Compact Logic Devices & Non-Volatile Memories,” in NRI Annual Review Gaithersburg, 2009.

37.

C. Jin, H. Lan, L. Peng, K. Suenaga, and S. Iijima, “Deriving carbon atomic chains from graphene,” Physical review letters vol. 102, p. 205501, 2009.CrossRef

38.

A. Ferrari, J. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. Novoselov, and S. Roth, “Raman spectrum of graphene and graphene layers,” Physical review letters vol. 97, p. 187401, 2006.CrossRef

39.

J. Beebe and J. Kushmerick, “Nanoscale switch elements from self-assembled monolayers on silver,” Applied Physics Letters vol. 90, p. 083117, 2007.CrossRef

40.

T. Tamura, T. Hasegawa, K. Terabe, T. Nakayama, T. Sakamoto, H. Sunamura, H. Kawaura, S. Hosaka, and M. Aono, “Material dependence of switching speed of atomic switches made from silver sulfide and from copper sulfide,” 2007, p. 1157.

41.

K. Terabe, T. Hasegawa, T. Nakayama, and M. Aono, “Quantized conductance atomic switch,” Nature vol. 433, pp. 47–50, 2005.CrossRef

42.

I. Ovchinnikov and K. Wang, “Variability of electronics and spintronics nanoscale devices,” Applied Physics Letters vol. 92, p. 093503, 2008.CrossRef

43.

N. Tombros, C. Jozsa, M. Popinciuc, H. Jonkman, and B. Van Wees, “Electronic spin transport and spin precession in single graphene layers at room temperature,” Nature vol. 448, pp. 571–574, 2007.CrossRef

44.

W. Han, K. Pi, W. Bao, K. McCreary, Y. Li, W. Wang, C. Lau, and R. Kawakami, “Electrical detection of spin precession in single layer graphene spin valves with transparent contacts,” Applied Physics Letters vol. 94, p. 222109, 2009.CrossRef

45.

S. Sugahara and M. Tanaka, “Spin MOSFETs as a basis for spintronics,” ACM Transactions on Storage (TOS) vol. 2, pp. 197–219, 2006.CrossRef

46.

S. Datta and B. Das, “Electronic analog of the electro optic modulator,” Applied Physics Letters vol. 56, pp. 665–667, 2009.CrossRef

47.

T. Jayasekera, B. D. Kong, K. W. Kim, and M. Buongiorno Nardelli, “Band Engineering and Magnetic Doping of Epitaxial Graphene on SiC (0001),” Physical review letters vol. 104, p. 146801, 2010.CrossRef

48.

Y. Semenov, K. Kim, and J. Zavada, “Spin field effect transistor with a graphene channel,” Applied Physics Letters vol. 91, p. 153105, 2007.CrossRef

49.

V. Karpan, G. Giovannetti, P. Khomyakov, M. Talanana, A. Starikov, M. Zwierzycki, J. van den Brink, G. Brocks, and P. Kelly, “Graphite and graphene as perfect spin filters,” Physical review letters vol. 99, p. 176602, 2007.CrossRef

50.

C. Tahan and R. Joynt, “Rashba spin-orbit coupling and spin relaxation in silicon quantum wells,” Physical Review B vol. 71, Feb 2005.

51.

J. Bai, X. Zhong, S. Jiang, Y. Huang, and X. Duan, “Graphene nanomesh,” Nat Nano vol. 5, pp. 190–194, 2010.CrossRef

52.

M. Polini, R. Asgari, Y. Barlas, T. Pereg-Barnea, and A. MacDonald, “Graphene: A pseudochiral Fermi liquid,” Solid State Communications vol. 143, pp. 58–62, 2007.CrossRef

53.

S. Banerjee, L. Register, E. Tutuc, D. Reddy, and A. MacDonald, “Bilayer pseudospin field-effect transistor (BiSFET): a proposed new logic device,” Electron Device Letters, IEEE vol. 30, pp. 158–160, 2009.CrossRef

54.

I. Spielman, J. Eisenstein, L. Pfeiffer, and K. West, “Resonantly enhanced tunneling in a double layer quantum Hall ferromagnet,” Physical review letters vol. 84, pp. 5808–5811, 2000.CrossRef

55.

H. Min, R. Bistritzer, J. Su, and A. MacDonald, “Room-temperature superfluidity in graphene bilayers,” Physical Review B vol. 78, p. 121401, 2008.CrossRef

56.

H. Min, R. Bistritzer, J.-J. Su, and A. H. MacDonald, “Room-temperature superfluidity in graphene bilayers,” Physical Review B vol. 78, p. 121401, 2008.CrossRef

57.

D. Reddy, L. Register, E. Tutuc, and S. Banerjee, “Bilayer Pseudospin Field-Effect Transistor: Applications to Boolean Logic,” Electron Devices, IEEE Transactions on vol. 57, pp. 755–764, 2010.CrossRef

58.

S. Ianeselli, C. Menotti, and A. Smerzi, “Beyond the Landau criterion for superfluidity,” Journal of Physics B: Atomic, Molecular and Optical Physics vol. 39, p. S135, 2006.CrossRef

59.

F. Rana, “Electron–hole generation and recombination rates for Coulomb scattering in graphene,” Physical Review B vol. 76, p. 155431, 2007.CrossRef

60.

M. Gilbert, “Performance Characteristics of Scaled Bilayer Graphene Pseudospin Devices,” Electron Devices, IEEE Transactions on pp. 1–9.

61.

A. Balandin, S. Ghosh, W. Bao, I. Calizo, D. Teweldebrhan, F. Miao, and C. Lau, “Superior thermal conductivity of single-layer graphene,” Nano Letters vol. 8, pp. 902–907, 2008.CrossRef

62.

L. A. Jauregui, Y. Yue, A. N. Sidorov, J. Hu, Q. Yu, G. Lopez, R. Jalilian, D. K. Benjamin, D. A. Delkd, W. Wu, Z. Liu, X. Wang, Z. Jiang, X. Ruan, J. Bao, S. S. Pei, and Y. P. Chen, “Thermal Transport in Graphene Nanostructures: Experiments and Simulations,” ECS Transactions vol. 28, pp. 73–83, 2010.CrossRef

63.

J. Hu, X. Ruan, and Y. Chen, “Thermal conductivity and thermal rectification in graphene nanoribbons: a molecular dynamics study,” Nano Letters vol. 9, pp. 2730–2735, 2009.CrossRef

64.

L. Wang and B. Li, “Thermal memory: a storage of phononic information,” Physical review letters vol. 101, p. 267203, 2008.CrossRef

65.

N. Yang, G. Zhang, and B. Li, “Thermal rectification in asymmetric graphene ribbons,” Applied Physics Letters vol. 95, p. 033107, 2009.CrossRef

66.

L. Wang and B. Li, “Thermal logic gates: computation with phonons,” Physical review letters vol. 99, p. 177208, 2007.CrossRef

67.

B. Li, L. Wang, and G. Casati, “Thermal diode: Rectification of heat flux,” Physical review letters vol. 93, p. 184301, 2004.CrossRef

68.

G. Wu and B. Li, “Thermal rectifiers from deformed carbonánanohorns,” Journal of Physics: Condensed Matter vol. 20, p. 175211, 2008.CrossRef

69.

N. Yang, N. Li, L. Wang, and B. Li, “Thermal rectification and negative differential thermal resistance in lattices with mass gradient,” Physical Review B vol. 76, p. 20301, 2007.CrossRef

70.

D. L. Nika, E. P. Pokatilov, A. S. Askerov, and A. A. Balandin, “Phonon thermal conduction in graphene: Role of Umklapp and edge roughness scattering,” Physical Review B vol. 79, p. 155413, 2009.CrossRef

71.

J. I. Cirac and P. Zoller, “Quantum Computations with Cold Trapped Ions,” Physical review letters vol. 74, p. 4091, 1995.CrossRef

Titel: Alternative State Variables for Graphene Transistors
verfasst von: Kosmas Galatsis
Alexander Shailos
Ajey P. Jacob
Kang L. Wang
Verlag: Springer US
Buch: Graphene Nanoelectronics
Print ISBN: 978-1-4614-0547-4

Electronic ISBN: 978-1-4614-0548-1

Copyright-Jahr: 2012
DOI: https://doi.org/10.1007/978-1-4614-0548-1_4