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2012 | OriginalPaper | Buchkapitel

3. Graphene Transistors

verfasst von : Raghu Murali

Erschienen in: Graphene Nanoelectronics

Verlag: Springer US

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Abstract

This chapter begins with an overview of digital and analog semiconductor technology. Following this, tradeoffs between various device designs are discussed for Si FETs. Analog (RF) applications require a low access resistance and small mobility degradation from dielectrics—the former is discussed in detail in this chapter, while the latter is the topic of Chap. 9. Digital FETs need certain criteria to be met—foremost amongst them being bandgap opening and complementary operation. Both these topics are discussed in detail in this chapter. Geometrical scaling of graphene FETs—including width and length scaling—is discussed along with implications for edge-scattering and methods to reduce it. Circuit implementations of graphene FETs are looked into including mixers, frequency multipliers, and inverters. A few non-FET structures are also looked at such as the Klein tunneling transistor.

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Titel: Graphene Transistors
verfasst von: Raghu Murali
Verlag: Springer US
Buch: Graphene Nanoelectronics
Print ISBN: 978-1-4614-0547-4

Electronic ISBN: 978-1-4614-0548-1

Copyright-Jahr: 2012
DOI: https://doi.org/10.1007/978-1-4614-0548-1_3