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Optical and Quantum Electronics
Published in: Optical and Quantum Electronics 4/2024

01-04-2024

A comparative study of AlGaN and BAlGaN based ultraviolet quantum well-based light emitting diodes

Authors: G. Dhivyasri, M. Manikandan, J. Ajayan, S. Sreejith, R. Remya, D. Nirmal

Published in: Optical and Quantum Electronics | Issue 4/2024

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Abstract

The ByAlxGa1-x–yN system validates promise as a suitable option for fabricating opto-electronic devices like light-emitting-diodes (LEDs) and laser diodes. This study conducts a comparative analysis between two types of LEDs: one with a single quantum well composed of AlGaN and another with BAlGaN, containing 1% boron, 22% aluminum, and a 3 nm thickness. These LEDs are designed as AlGaN-based quantum well (LED1) and BAlGaN-based quantum well devices (LED2). Technology computer-aided design (TCAD) Silvaco physical simulator is used to perform simulations and comparisons in terms of both optical and electrical characteristics. The simulations includes anode current with respect to anode voltage, luminous power and wall-plug efficiency relative to injection current, and power spectral density concerning wavelength. Remarkably, even with a mere 1% boron content within the quantum well, the LED's performance displays a 5% enhancement in power spectral density and a 7% boost in wall-plug efficiency.
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Metadata
Title
A comparative study of AlGaN and BAlGaN based ultraviolet quantum well-based light emitting diodes
Authors
G. Dhivyasri
M. Manikandan
J. Ajayan
S. Sreejith
R. Remya
D. Nirmal
Publication date
01-04-2024
Publisher
Springer US
Published in
Optical and Quantum Electronics / Issue 4/2024
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI
https://doi.org/10.1007/s11082-023-06270-x

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