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Published in:
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2024 | OriginalPaper | Chapter

A DC-50 GHz SPDT Switch for 5G Wireless Applications

Authors : Mfonobong Uko, Sunday Cookey Ekpo, Fanuel Elias, Dipankar Saha, Swarnadipto Ghosh, Muhammad Ijaz, Samik Chakraborty, Andrew Gibson

Published in: The Second International Adaptive and Sustainable Science, Engineering and Technology Conference

Publisher: Springer Nature Switzerland

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Abstract

A broadband high-isolation single pole double throw (SPDT) switch based on a 0.15 μm gate length indium gallium arsenide (InGaAs) pseudomorphic high electron transistor (pHEMT) is reported. The SPDT switch is composed of four shunt-stacked FET units on each branch with two FETs in series for increased voltage handling capability. The switch is designed to operate at the frequency range of DC-50 GHz with less than 3 dB insertion loss and more than 40 dB isolation, for X-band and K/Ka band frequency applications.

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previous chapter Rectifier and Reconfigurable Impedance-Matching Network Analysis for Wireless Sub-6 GHz 5G/Wi-Fi 6/6E Energy Harvester
next chapter Multi-Radio Frequency Antenna for Sub-6 GHz 5G Carrier and Data Link Margin Enhancement
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Metadata
Title
A DC-50 GHz SPDT Switch for 5G Wireless Applications
Authors
Mfonobong Uko
Sunday Cookey Ekpo
Fanuel Elias
Dipankar Saha
Swarnadipto Ghosh
Muhammad Ijaz
Samik Chakraborty
Andrew Gibson
Copyright Year
2024
Book
The Second International Adaptive and Sustainable Science, Engineering and Technology Conference

Print ISBN: 978-3-031-53934-3

Electronic ISBN: 978-3-031-53935-0

Copyright Year: 2024

DOI
https://doi.org/10.1007/978-3-031-53935-0_9