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Wireless Personal Communications
Published in: Wireless Personal Communications 3/2014

01-12-2014

A Novel 2.5–3.1 GHz Wide-Band Low-Noise Amplifier in 0.18 \(\upmu \hbox {m}\) CMOS

Authors: Moslem Nouri, Gholamreza Karimi

Published in: Wireless Personal Communications | Issue 3/2014

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Abstract

Aiming for the simultaneous realization of constant gain, accurate input and output impedance matching and minimum noise figure (NF) over a wide frequency range, the circuit topology and detailed design of wide broadband low noise amplifier (LNA) are presented in this paper. A novel 2.5–3.1 GHz wide-band LNA with unique characteristics has been presented. Its design and layout are done by TSMC 0.18 \(\upmu \hbox {m}\) technology. Common gate stage has been used to improve input matching. In order to enhance output matching and reduce the noise as well, a buffer stage is utilized. Mid-stages which tend to improve the gain and reverse isolation are exploited. The proposed LNA achieves a power gain of 15.9 dB, a NF of 3.5 dB with an input return loss less than \(-\)11.6, output return loss of \(-\)19.2 to \(-\)19 and reverse isolation of \(-\)38 dB. The LNA consumes 54.6 mW under a supply voltage of 2 V while having some acceptable characteristics.
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Metadata
Title
A Novel 2.5–3.1 GHz Wide-Band Low-Noise Amplifier in 0.18  CMOS
Authors
Moslem Nouri
Gholamreza Karimi
Publication date
01-12-2014
Publisher
Springer US
Published in
Wireless Personal Communications / Issue 3/2014
Print ISSN: 0929-6212
Electronic ISSN: 1572-834X
DOI
https://doi.org/10.1007/s11277-014-1969-7

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