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Optical and Quantum Electronics

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01-02-2016

A novel design on ultra-thin lateral-current-injection III–V on silicon with ultra-compact optical VIA for heterogeneous electronic–photonic integration

Authors: Jing Pu, Qian Wang, Ren Min

Published in: Optical and Quantum Electronics | Issue 2/2016

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Abstract

A novel approach to integrate an ultra-thin and ultra-compact lateral-current-injection (LCI) III–V on silicon-on-insulator platform by direct wafer bonding technique is proposed and designed. The proposed LCI III–V on silicon platform has an ultra-thin thickness of 270 nm which is ~10 times thinner than the vertical current injection III–V bonded on silicon. It has a confinement factor in the 100 nm thick active region larger than 40 % for 1 µm wide III–V waveguide, which is the highest among all the other integration schemes proposed so far. An optical vertical interconnect access to transfer light efficiently between III–V and silicon layer is designed. The design of the shortest “Optical Via” of 4 µm which gives ~100 % coupling efficiency is presented.

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Title: A novel design on ultra-thin lateral-current-injection III–V on silicon with ultra-compact optical VIA for heterogeneous electronic–photonic integration
Authors: Jing Pu
Qian Wang
Ren Min
Publication date: 01-02-2016
Publisher: Springer US
Published in: Optical and Quantum Electronics / Issue 2/2016
Print ISSN: 0306-8919
Electronic ISSN: 1572-817X
DOI: https://doi.org/10.1007/s11082-015-0292-1

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